PMD11K80 Search Results

pmd10K80

Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

pmd10K80

Abstract: 10 amp npn darlington power transistors PMD10K 5 amp npn darlington power transistors PMD10K100 PMD11K100 PMD11K80 10 amp npn darlington power transistors with low saturation voltage PMD-10K
Contextual Info: A LAMBDA COMPLEMENTARY POWER DARL1NGTONS PM D 10K , 11K SERIES 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Electrical specifications guaranteed for operating junction temperature range of 0 - 200°C • Guaranteed and 100% tested for lSB

2N5875

Abstract: BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

PMD11K100

Abstract: PMD10K100 PMD10K60 PMD11K60 PMD11K80 PMD10K PMD10K80 PMD11K PMD-10K-60 PMD-10K-100
Contextual Info: DESCRIPTION The CENTRAL SEMICONDUCTOR PMD1OK/PMD11K series types are silicon NPN/PNP darlington power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package, and designed for power switching applications. These devices are designed

pmd12k-40

Abstract: 2n6543 bu208 2n3713 LM3661TL-1.40
Contextual Info: Power Transistors Ir " -— y i TO-3 Case TYPE NO. •c PD @ lc hpE BVc b O BVc e o v c e s a t) *c *TYP (A) NPN 2N3055 PNP MJ2955 2N3442 m MAX *T ‘ TYP (V) (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160

80 amp 80v npn darlington

Abstract: 10 amp npn darlington power transistors with low saturation voltage
Contextual Info: SEMTECH CORP S ñE D • Û I B T I B 11! 00032Sti 577 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L Collector Emitter Voltage PMD10K, 11K80 PMD10K, 11K100 V ceO Collector Base Voltage PMD10K, 11K80 PMD10K, 11K100 V c 80

Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. 'c Pd bvCBO BVceo @ hpE lc v CE(SAT) @|c *TYP ‘TYP (A) NPN PNP BUY69C (W) MAX 00 (V) MIN MIN (A) (V) (A) MAX (MHZ) MIN MAX MIN 2.5 3.3 8.0 10* 10 100 500 200 15 . 30 200 100 90 25 100 7.5 0.8 7.5 2.0 60

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

PMD10K100

Abstract: PMD12K40 MJ802 MJ4502 MJ11016 MJ802-MJ4502 MJ10012 PMD12K100 PMD13K100 PMD16K100 PMD11K60
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP BUY69C IC PD (A) MAX (W) BVCBO BVCEO (V) MIN (V) MIN *TYP hFE @ IC VCE(SAT) @ IC (A) MIN MAX (V) MAX (A) fT *TYP (MHz) MIN 10 100 500 200 15 - 2.5 3.3 8.0 10* MJ802 MJ4502 30 200 100 90 25 100 7.5 0.8

J901

Abstract: PMD1602K PMD16K100 PMD12K60
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. •e PD bvc b o hpE V cS O @ ic VCE(SAT) @*c TYP (A) NPN PN P BUY69C (W) MAX *TYP (V) (V) MIN UH M m in MIN MAX 2.5 3.3 8.0 10* (A) (V) (A) MAX (MHZ) MIN 10 100 500 200 15 . MJ802 MJ4502 30 200 100 90 25

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

MJ6503

Abstract: PMD10K100 MJ1000 MJ4502 EQUIVALENT PMD16K100 PMD1703K PMD17K100 MJ10012 MJ802 PMD10K40
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN IC PNP BUY69C (A) MAX PD BVCBO BVCEO *BVCEV (W) (V) (V) MIN MIN hFE @ IC VCE(SAT) @ IC (A) MIN MAX (V) MAX (A) fT *TYP (MHz) MIN 10 100 500 200 15 - 2.5 3.3 8.0 10* MJ802 MJ4502 30 200 100 90 25 100 7.5

Contextual Info: £/-'10ducts., Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVCEO(SUS)= SOV(Min)

MJ11016

Abstract: PMD10K40 PMD1703K PMD18K100 pm010k60 pmd16k100
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. 'c Pd BVc b o @ lc bvceo (A) NPN PNP BUY69C (W ) MAX 10 00 (V) MIN MIN *TYP (A) MIN (V) MAX (MHZ) (A) MAX 100 500 200 15 2.5 3.3 MJ802 MJ4502 30 200 100 90 25 100 7.5 MJ1000 M J 900 8.0 90 60 60 1,000 . 3.0

LM3661TL-1.40

Abstract: BUW36 2N6253 2n6545
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

BRX49 equivalent

Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
Contextual Info: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number