PL SOT223 Search Results

Contextual Info: FAX# 408 944-0970 TITLE 3 LEAD SOT223 PACKAGE OUTLINE & RECOMMENDED LAND PATTERN DRAWING # SOT223-3LD-PL-1 Rev A ECN 013112HC08 Originator S. YEH Change New release UNIT MM Reason New

SMD Code 12W SOT23

Abstract: 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc
Contextual Info: SMD Transistors SOT-89 Case 1.2W TYPE NO. CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 CXT5551 CXTA14 CXTA42 CXTA64 CXTA92 DESCRIPTION NPN HIGH CURRENT PNP HIGH CURRENT NPN AMPL'SWITCH PNP AMPt/SWITCH NPN HIGH CURRENT NPN AM PL/SWITCH

TSB1G7000-E

Abstract: CL21B105KONE TM162JCAWG1 GMC21X7R104K50NTLF DC-003-250 CL21B105 TSB1G7000 GMC21X7R104K50NT ECS-80-20-5PX-DN AXJ115301S
Contextual Info: KEY Microchip Technology Incorporated 2355 W. Chandler Blvd. Chandler, AZ 85224-6199 CR: Cross CS: Consign PL: Pack List ASSEMBLY NUMBER: 12-00723 REV: 7 ASSEMBLY NAME: FINAL ASSY, EXPLORER 16 DEVELOPMENT BOARD Qty Part Number Rev D: Drawing B: BOM LBL: Label

trailing edge dimmer mosfet diac

Abstract: LNK457DG Leviton 6615 Leviton tape 3m 9448 3m 9448 SNX-R1536 EE16 pc40 smd transistor 43t RM34DMA
Contextual Info: Title Specification Application Reference Design Report for a 5 W Dimmable Power Factor Corrected LED Driver NonIsolated Using LinkSwitchTM-PL LNK457DG 90 VAC – 265 VAC, >0.9 PF Input; 12 V – 18 V, 350 mA 10% Output LED Driver for A19 Incandescent Lamp

GL949

Abstract: Ic55A
Contextual Info: CORPORATION GL949 Description ISSUED DATE :2006/11/20 REVISED DATE : PNP SI L I CO N PL AN AR HI G H C URRE NT T RANSI ST O R The GL949 is designed for general purpose switching and amplifier applications. Features 6Amps continuous current, up to 20Amps pulse current

"Silicon Controlled Rectifier"

Abstract: igniter ignitor 107M TICC107MR-S
Contextual Info: CO M PL IA NT TICC107M *R oH S SILICON CONTROLLED RECTIFIER TICC107M Silicon Controlled Rectifier 1 A RMS On-State Current Glass Passivated Wafer 600 V Off-State Voltage IGT 50 µA min, 200 µA max. SOT-223 Package Top View Description The TICC107M is a sensitive gate SCR designed for switching

Contextual Info: CO M PL IA NT TICC107M *R oH S SILICON CONTROLLED RECTIFIER TICC107M Silicon Controlled Rectifier 1 A RMS On-State Current Glass Passivated Wafer 600 V Off-State Voltage IGT 50 µA min, 200 µA max. SOT-223 Package Top View Description The TICC107M is a sensitive gate SCR designed for switching

GL1501A

Contextual Info: CORPORATION ISSUED DATE :2006/11/20 REVISED DATE : GL1501A NPN SI L I CO N PL AN AR MEDI UM PO W ER HI G H G AI N T RANSI ST O R Description The GL1501A is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 10Amps pulse current

GL9401A

Contextual Info: CORPORATION ISSUED DATE :2006/11/20 REVISED DATE : GL9401A NPN SI L I CO N PL AN AR MEDI UM PO W ER HI G H G AI N T RANSI ST O R Description The GL9401A is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 20Amps pulse current

GL9411A

Contextual Info: CORPORATION ISSUED DATE :2006/11/20 REVISED DATE : G L 9 4 11 A PNP SI L I CO N PL AN AR MEDI UM PO WE R HI G H G AI N T RANSI ST O R Description The GL9411A is designed for general purpose switching and amplifier applications. Features 4 Amps continuous current, up to 10Amps pulse current

C-0120

Contextual Info: T F TMos Package Outlines - A - ► \ 1 C 1 i I t T t- E - * l •*— D 2 PL I s e a t in g p la n e NOTES. 1. DIM ENSIONING AND TOLERANCING PER ANSI Y14 5M, 1982 2 CONTROLLING DIMENSION INCH 3. ALL RULES AND NOTES ASSOCIATED WITH STYLE 3. PIN 1 GATE

Contextual Info: Si 3 4 6 0 - EVB Si3460 E VALUATION B OARD U SER ’ S G U I D E 1. Introduction This document is intended to be used in conjunction with the Si3460 data sheet for designers interested in: An Pl No ea t se Re C com on si me de n r S de i3 d f 46 or 2 N

tsop 338

Contextual Info: Assembly Base List PACKAGE TSSOP-8 SOD-323 SOT-323 SOT-23 SC-59 SOT-89 SIP-3 SIP-4 SOT-25 SOT-26 TSOP-5 TSOP-6 SOT-28 SOT-223 SOP-5/7/8/10 SOP-8Expose SSOP-14 PL-4/S-4 TO-92 P-DIP-8 P-DIP-14/16 MSOP-8 MSOP-10 TO-220/262/263-3/5 TO-251/252 TO-220/263-3 TO-251/252

BFG591 amplifier

Abstract: BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide bf763 S0T343
Contextual Info: Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE fT / l c CURVE (see Fig.1 ) LEADED SOT54 SURFACE-MOUNT SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 (2) BF747 BF547 BF547W BFS17

Contextual Info: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium

bgy113f

Abstract: BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Modules and Transistors for Mobile Phones 1996 Jun 19 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones Selection guide VHF CAR MOBILE

BLY32

Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Contextual Info: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors

DRF1601

Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER
Contextual Info: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.

SMD TRANSISTOR L6

Abstract: BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC08b 1996 May 02 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation

TRANSISTOR BD139

Abstract: smd transistor L6 philips power transistor bd139 bd139 application note UHF TRANSISTOR bd139 smd BD139 transistor L6 smd transistor TRANSISTOR SMD catalog RF POWER TRANSISTOR NPN
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES • Very high efficiency • Low supply voltage.

TRANSISTOR CATALOGUE

Abstract: UHF TRANSISTOR bd139 smd philips power transistor bd139 bd139 application note L6 TRANSISTOR SMD TRANSISTOR L6 BD139 BD139 application power transistor bd139
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES • Very high efficiency • Low supply voltage. 4 handbook, halfpage APPLICATIONS

Contextual Info: DISCRETE SEMICONDUCTORS DAT BLT70 UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES • Very high efficiency • Low supply voltage. 4 handbook, halfpage APPLICATIONS • Hand-held radio equipment in common emitter class-AB

AMS1117 equivalent

Abstract: AMS1117 3.3V circuit diagram CS8810 Myson Century cs GPIO14 ep3can
Contextual Info: CS8810 General Purpose USB 1.1-to-ATA/ATAPI Bridge Controller FEATURES continued The CS8810 is a single chip general-purpose USB controller, which integrates USB 1.1 compliant transceiver. Together with product dependent firmware and software driver, this chip is able to fulfill

transistor tt 2222

Abstract: smd 809 x transistor transistor SMD S33
Contextual Info: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures