PIRGO ELECTRONICS Search Results

SDT5504

Abstract: SDT5503 T 8922 SDT5505 PG5020 SDT5002 SDT5510 PG5002 T5511 SDT5003
Contextual Info: t ' i r A P I i ELECTRONICS INC ^3 DE I ODMHSTS DOOOOai 0 " f « a 7^-33' ~ ù INTERCHANGEABILITY CHART SILICON POWER TRANSISTORS Competitive . Type No. Pirgo Replacement Type No. Competitive Type No. Pirgo Replacement Type No. H 1 Competitive Type No. Pirgo

SDT9011

Contextual Info: t ' i r A P I i ELECTRONICS INC ^3 DE I ODMHSTS DOOOOai 0 " f « a 7^-33'~ù/L INTERCHANGEABILITY CHART SILICON POWER TRANSISTORS ' Competitive . Type No. “ * Í ! Competitive Type No. Pirgo Replacement Type No. H 1 Competitive Type No. Pirgo Replacement

2N4863

Abstract: PG1060 PG1050 PG1051 PG1052 PG1053 PG1054 PG1055 PG1056 PG1057
Contextual Info: 3* * / 20A- • 01:4.4 : - D P I ELECTRONICS INC 1 _ 20 1 IV I * DE | □DM3S‘i2- 0D0D14M S „ . T E R I M 1 . : POWER TRANSISTOR ENGINEERING BULLETIN PIRGO ? _ -S u b je c t ~7Z3 3 . - . . . B U L L E T I N ^ to R e v i s i o n

2N4863A

Abstract: 2N4862 2N4863 2N4864
Contextual Info: 0043 592 A P I ELECTRONICS : 93A004S T -2 7 -0 9 TNC P I ELECTRONICS INC De | O O ^ S I S POWER TRANSISTORS ENGINEERING BULLETIN • GG_GGG4ê "1 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N4863, 2N 4864,2 AMP NPN SILICON PLANAR POWER TRANSISTORS wgm T E R M IN A L C O N N E C T O N S

50 watts 10mhz 4a

Abstract: API Electronics PG1083 PG1067 PG1068 PG1069 PG1070 PG1071 PG1072 PG1073
Contextual Info: 00 43592 A P I ELECTRONICS INC.- 2 0 A -Q1 4 é - I Ampower~Semiconductor Corp.’ '""ici i>F|□□43sc]e oooomh i I 375 Kings Highway IN T E R IM B U L L E T IN Subject to Revision W ithout Notice Hauppauge, N. Y. 11787 ¡PIRGO -A PR IL 15, 1971 POWER TRANSISTOR

2n3749

Abstract: 2N3744 2N3751 2N3747 2N3750 2N3748 2N3752 Pirgo Electronics 2N3759
Contextual Info: #*"*-: A P I ELECTRONICS INC ^3 |p a ? % D E | G D 4 3 S c]a □DD0Q44 1 r-3 3 ^ THRU 2N3752 POWER TRANSISTORS ENGINEERING BULLETIN pgggg"*r ,".r.^!.lM^'*"7 'T tV ^ y « ^ 2N 3744^ TYPE 2N3744 THRU 2N3752, 5 MâP NPN SILICON PLANAR POWER TRANSISTORS SEATING P L A N E -

PG1387

Abstract: PG1388 PG1390 PG1391 PG1392 PG1393 PG1394 PG1395 PGI389 Pirgo Electronics
Contextual Info: 13A01gg- 0043592 A P I ELECTRONICS INC Ì3 D E ^ 00435^5 7'-33-// D 0 0D 12 S b PO W IR TRANSISTOR ENGINEERING RLii I f U N 10 AMP PLANAR NPN 60 MHz typical TO-3 65 WATTS at 100°G MAXIMUM RATINGS at 25°G AMBIENT PG13Ö7 PG1390 PG1393 PG1388 PGl389 PG1391 • PG1392

PIR60

Contextual Info: 0043592 A P I ELECTRONICS A P I '7 INC 1 7 ^ a > ? ~«i/ " m i>ËÏ 00435=15 0000131 7 I . y • . 13 A 013 "il 7: ELECTRONICS INC POWER TRANSISTOR ENGINEERING BULLETIN ' '1 AMP NPN TO-5 •CEX PG5003 -BVCEO 100V at 100mA 100UA max at V CE=100V VBE off = 1 »5V

Contextual Info: t3592 A P I A P I' E LE CT RONI C S E L E C T RONI C S INC INC 93A0032 T-33-15 ^3 loD^S^a DE -T -3 3 -1 5 ' i b 0D00D3H 5 POWERlffANSISTO ENGINEERING BULLETIN I 2N5250 TYPE 2 N 5 2 5 0 ,9 0 AM P N PN SILICON PLANAR P O W iR f RANSESTOR LINEAR hFEFROM 100 mA TO 90 AMPS

b063

Abstract: Concord Electronics DDG0133 Pirgo Electronics
Contextual Info: nnA ^ 5 9 2 A P T :A P I ELECTRONICS INC ELECTRONICS 13A0133 INC POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP T O -5 100V at 100mA ICEX lOOfiA max at VB E off =1.5V, V CE=100V ICBO 100p,A at 100V XEBO 0.5mA at 7V HPE • <40 min at Ic=100mA, V CE=1V vBE(sat)

2N5313

Abstract: 2N5315 DDD003S Pirgo Electronics NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Contextual Info: %Ó^3592 A P'"I ELECTRONICS INC;=J3 DE^ 0 0 4 3 5 ^ 2 D0 0Q 03 4 =1 7 - 3 3 - 1/ 2N5313 2N5315 POWER TRANSISTOR ENGINEERING BULLETIN TYPE 2N5313 and 2N5315,20 A M P N P N SILIC O N PLAN AR PO W ER TRANSISTORS LINEAR H FROM 50 mA TO 20 AMPS HIGH FREQUENCY, f. = 30 MHz (MIN AT 1 AMP

Pirgo Electronics

Abstract: Concord Electronics npn 100n 1a
Contextual Info: •hwalpi A P I 0043592 A, P I E L E CT RO N I CS ELECTRONICS INC 13 INC 13A0132 ~ T :A ? 2 p >L S Ë 1 d D 4 3 S c]B 0 0 D D 1 B E - ^ •r. . T U VTCK I K A N W I U K ENGINEERING BULLETIN 1 AMP NPN TO-5 BV c e o 120V at 100mA ICEX 100|iA max at V Cfí=120V

TRANSISTOR 6CT

Abstract: transistor 120v 6ct transistor
Contextual Info: A P I ELECTRONICS INC . 13 DE g □ 0 M 3 5 t c □□□□IBM 2 | ‘P POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP TO-5 BVCEO 120V at 100mA ICEX lOO^A max at VB E off =1.5V, V CE=120V ICBO 100[jlA at 120V lEBO 0.5mA at TV H-•FE ' 40 min at Ic=100mA, V q ^ ^ V

PCJ 3 9001

Abstract: Pirgo Electronics
Contextual Info: •hwakfp 00 4 3592 A P I ELECTRONICS A, F I EL EC T RO N I CS 13A0132 INC 13 INC ■»1 T-áJ'Q! D ¡ T d D 4 3 5 cíB □ □ 0 0 1 B E T | % rUfTEK i K A n s m u K ENGINEERING BULLETIN 1 AMP NPN TO-5 120V at 100mA ICEX 100|iA max at V Cfí=120V PG5004

Contextual Info: A P I ELECTRONICS IN C , 13 D E 0 D 4 3 S L1d □ □ 0 D 1 3 4 2 | POWER TRANSISTOR ENGINEERING BULLETIN P - S 1 AMP PNP TO-5 PG6004 b v ceo 120V at 100mA IGEX 100|iA max at VBE(off =1.5V, VCE=120V ICBO lOOpiA at 120V lEBO 0.5mA at JV H•PE 40 min at Ic=100mA, V ^ g ^ V

Contextual Info: nn4^q92 A P I A P I ELECTRONICS 13A0133 ELECTRONICS INC" INC IB De J 0043STB DD00133 D J l POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP TO-5 100V at 100mA XCEK 100|i,A max at VB E off =1.5V, V QE=100V ICBO 100[xA at 100V XEBO 0.5mA at 7V HPE < 40 min at Ic=100mA, V CE=1V

API Electronics

Abstract: iC-LA vce 1v Pirgo Electronics
Contextual Info: 0043592 A P I E L E CT RO N IC S A P I ELECTRONICS INC INC POWER TRANSISTOR ENGINEERING BULLETIN • . 13 A 01 31 7^o> *13 D E I 00435=15 -• _ 0000131 7 - y - ; '1 AMP NPN TO-5 PG5003 100V at 100mA .BV CEO "CEX lOO^A max at VCE=100V CBO . VBE off =1»5V

Contextual Info: 0 0 4 3 592 A P I A P I ELECTRONICS “\3A0l 29 •~33~ ¿>1 D e | 00435^2 00DD151 1 | ~ p INC 13 ELECTRONICS INC POWER TRANSISTOR ENGINEERING BULLETIN 10 AMP PNP PLANAR TO-3 PREMIUM GRADE 65 WATTS at 100°C 60 MHZ typical MAXIMUM RATINGS at 25°C AMBIENT

Pirgo Electronics

Contextual Info: A P I ELECTRONICS INC 13 De | :-i 3 a 0135 ; A— g OM35c 12 DDDD13S 4 ' * i f •" IN T E R IM " . ■ * B U L L E T IN S u b je c t to R e visio n W ithout N otice - ■ rUYVEIt nAiurn vniiififTAn I R A ^ IU n T-¿7-¿7_ -July T5, 1971 '■ ' '' . . -<

IR TRANSISTOR

Abstract: PGI386 2N40 2N4070 PG1384 PGI380 PGI381 PGI382 PGI383 PGI385
Contextual Info: ,0043592 - v .' •■' ë * . A-' v-j- t; : , ” . A P I E L E C T RONICS I NC DE |0043Scia D00 D1 E0 a 13 _ 1 3 A 0 1 2 0 ITj t e r i m T ~ ^ 3 " // b u l l e t in S u b je ct to Revision Without N otice. z i f r i ' s * * 1•- ‘• -July 20, 1971

Pirgo Electronics

Abstract: PG139 PGI387 PGI388 PGI389 PGI392 PGI393 PGI394 PGI395
Contextual Info: 0 0 4 3592 A P I ELECTRONICS INC 13A012g- 7 '- 33- / / POWER T R A N S A R I» I ENGINEERING RIMLETIN asipiiBqp, 10 AMP PLANAR NPN . 60 MHz t y p i c a l 65 WATTS a t 1 0 0 °0 . MAXIMUM RATINGS a t 2 5 ° 0 AMBIENT C o lle c to r - B a s e V o lta g e •

Concord Electronics

Abstract: Pirgo Electronics
Contextual Info: 7— ] ^ — TW" 0043592 A P I ELECTRONICS ÇOWERTRANSISTOR A P I ENGINEERING BULLETIN PIRCO j, 3 A 0 125 INC ELECTRO NICS 13 IN C 7~~J? J-/7' DE I □ □ 4 3 S cia Ti D D G D ia S " J 1 ¿ELECTROniCS;inf- -at* TYPE P02167, 5 AMP PNP SILICON PLANAR POWER TRANSISTORS

2N4863

Abstract: 2N4862 2N4864 TG70
Contextual Info: 0043 592 A P I ELECTRONICS 95A0 48 T-g7-09_ TNC P I ELECTRONICS INC . T3 DE 1 ^ 0 4 3 5 ^ 2 DOOOOMfl T POWER TRANSISTORS ENGINEERING BULLETIN ID 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N 4863, 2 N 4 8 6 4 ,2 AMP NPN SILICON PLANAR POW ER TRANSISTORS

Sprague Electric

Abstract: Pirgo Electronics
Contextual Info: API ELECTRONICS INC . v?=r :43A0135 ; 13 de 0111435^2 4| ' ' ' rUWtKIKANÌUIUK ENGINEERINGBULLETIN - - $ INTERIM BU LLETIN * Subject to Revision Without Notice . - J u ly T5, 1971 pi n DG r-i w 0w -• ELECTROniCSIliC. TYPE 1162, 7 AMP POWER DARLINGTON PLANAR TRANSISTOR