PIRGO ELECTRONICS Search Results

SDT5504

Abstract: SDT5503 T 8922 SDT5505 PG5020 SDT5002 SDT5510 PG5002 T5511 SDT5003
Contextual Info: t ' i r A P I i ELECTRONICS INC ^3 DE I ODMHSTS DOOOOai 0 " f « a 7^-33' ~ ù INTERCHANGEABILITY CHART SILICON POWER TRANSISTORS Competitive . Type No. Pirgo Replacement Type No. Competitive Type No. Pirgo Replacement Type No. H 1 Competitive Type No. Pirgo

SDT9011

Contextual Info: t ' i r A P I i ELECTRONICS INC ^3 DE I ODMHSTS DOOOOai 0 " f « a 7^-33'~ù/L INTERCHANGEABILITY CHART SILICON POWER TRANSISTORS ' Competitive . Type No. “ * Í ! Competitive Type No. Pirgo Replacement Type No. H 1 Competitive Type No. Pirgo Replacement

2N4863A

Abstract: 2N4862 2N4863 2N4864
Contextual Info: 0043 592 A P I ELECTRONICS : 93A004S T -2 7 -0 9 TNC P I ELECTRONICS INC De | O O ^ S I S POWER TRANSISTORS ENGINEERING BULLETIN • GG_GGG4ê "1 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N4863, 2N 4864,2 AMP NPN SILICON PLANAR POWER TRANSISTORS wgm T E R M IN A L C O N N E C T O N S

2n3749

Abstract: 2N3744 2N3751 2N3747 2N3750 2N3748 2N3752 Pirgo Electronics 2N3759
Contextual Info: #*"*-: A P I ELECTRONICS INC ^3 |p a ? % D E | G D 4 3 S c]a □DD0Q44 1 r-3 3 ^ THRU 2N3752 POWER TRANSISTORS ENGINEERING BULLETIN pgggg"*r ,".r.^!.lM^'*"7 'T tV ^ y « ^ 2N 3744^ TYPE 2N3744 THRU 2N3752, 5 MâP NPN SILICON PLANAR POWER TRANSISTORS SEATING P L A N E -

PG1387

Abstract: PG1388 PG1390 PG1391 PG1392 PG1393 PG1394 PG1395 PGI389 Pirgo Electronics
Contextual Info: 13A01gg- 0043592 A P I ELECTRONICS INC Ì3 D E ^ 00435^5 7'-33-// D 0 0D 12 S b PO W IR TRANSISTOR ENGINEERING RLii I f U N 10 AMP PLANAR NPN 60 MHz typical TO-3 65 WATTS at 100°G MAXIMUM RATINGS at 25°G AMBIENT PG13Ö7 PG1390 PG1393 PG1388 PGl389 PG1391 • PG1392

b063

Abstract: Concord Electronics DDG0133 Pirgo Electronics
Contextual Info: nnA ^ 5 9 2 A P T :A P I ELECTRONICS INC ELECTRONICS 13A0133 INC POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP T O -5 100V at 100mA ICEX lOOfiA max at VB E off =1.5V, V CE=100V ICBO 100p,A at 100V XEBO 0.5mA at 7V HPE • <40 min at Ic=100mA, V CE=1V vBE(sat)

2N5313

Abstract: 2N5315 DDD003S Pirgo Electronics NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Contextual Info: %Ó^3592 A P'"I ELECTRONICS INC;=J3 DE^ 0 0 4 3 5 ^ 2 D0 0Q 03 4 =1 7 - 3 3 - 1/ 2N5313 2N5315 POWER TRANSISTOR ENGINEERING BULLETIN TYPE 2N5313 and 2N5315,20 A M P N P N SILIC O N PLAN AR PO W ER TRANSISTORS LINEAR H FROM 50 mA TO 20 AMPS HIGH FREQUENCY, f. = 30 MHz (MIN AT 1 AMP

Pirgo Electronics

Abstract: Concord Electronics npn 100n 1a
Contextual Info: •hwalpi A P I 0043592 A, P I E L E CT RO N I CS ELECTRONICS INC 13 INC 13A0132 ~ T :A ? 2 p >L S Ë 1 d D 4 3 S c]B 0 0 D D 1 B E - ^ •r. . T U VTCK I K A N W I U K ENGINEERING BULLETIN 1 AMP NPN TO-5 BV c e o 120V at 100mA ICEX 100|iA max at V Cfí=120V

Contextual Info: A P I ELECTRONICS IN C , 13 D E 0 D 4 3 S L1d □ □ 0 D 1 3 4 2 | POWER TRANSISTOR ENGINEERING BULLETIN P - S 1 AMP PNP TO-5 PG6004 b v ceo 120V at 100mA IGEX 100|iA max at VBE(off =1.5V, VCE=120V ICBO lOOpiA at 120V lEBO 0.5mA at JV H•PE 40 min at Ic=100mA, V ^ g ^ V

Contextual Info: nn4^q92 A P I A P I ELECTRONICS 13A0133 ELECTRONICS INC" INC IB De J 0043STB DD00133 D J l POWER TRANSISTOR ENGINEERING BULLETIN 1 AMP PNP TO-5 100V at 100mA XCEK 100|i,A max at VB E off =1.5V, V QE=100V ICBO 100[xA at 100V XEBO 0.5mA at 7V HPE < 40 min at Ic=100mA, V CE=1V

API Electronics

Abstract: iC-LA vce 1v Pirgo Electronics
Contextual Info: 0043592 A P I E L E CT RO N IC S A P I ELECTRONICS INC INC POWER TRANSISTOR ENGINEERING BULLETIN • . 13 A 01 31 7^o> *13 D E I 00435=15 -• _ 0000131 7 - y - ; '1 AMP NPN TO-5 PG5003 100V at 100mA .BV CEO "CEX lOO^A max at VCE=100V CBO . VBE off =1»5V

Pirgo Electronics

Contextual Info: A P I ELECTRONICS INC 13 De | :-i 3 a 0135 ; A— g OM35c 12 DDDD13S 4 ' * i f •" IN T E R IM " . ■ * B U L L E T IN S u b je c t to R e visio n W ithout N otice - ■ rUYVEIt nAiurn vniiififTAn I R A ^ IU n T-¿7-¿7_ -July T5, 1971 '■ ' '' . . -<

IR TRANSISTOR

Abstract: PGI386 2N40 2N4070 PG1384 PGI380 PGI381 PGI382 PGI383 PGI385
Contextual Info: ,0043592 - v .' •■' ë * . A-' v-j- t; : , ” . A P I E L E C T RONICS I NC DE |0043Scia D00 D1 E0 a 13 _ 1 3 A 0 1 2 0 ITj t e r i m T ~ ^ 3 " // b u l l e t in S u b je ct to Revision Without N otice. z i f r i ' s * * 1•- ‘• -July 20, 1971

Pirgo Electronics

Abstract: PG139 PGI387 PGI388 PGI389 PGI392 PGI393 PGI394 PGI395
Contextual Info: 0 0 4 3592 A P I ELECTRONICS INC 13A012g- 7 '- 33- / / POWER T R A N S A R I» I ENGINEERING RIMLETIN asipiiBqp, 10 AMP PLANAR NPN . 60 MHz t y p i c a l 65 WATTS a t 1 0 0 °0 . MAXIMUM RATINGS a t 2 5 ° 0 AMBIENT C o lle c to r - B a s e V o lta g e •

Sprague Electric

Abstract: Pirgo Electronics
Contextual Info: API ELECTRONICS INC . v?=r :43A0135 ; 13 de 0111435^2 4| ' ' ' rUWtKIKANÌUIUK ENGINEERINGBULLETIN - - $ INTERIM BU LLETIN * Subject to Revision Without Notice . - J u ly T5, 1971 pi n DG r-i w 0w -• ELECTROniCSIliC. TYPE 1162, 7 AMP POWER DARLINGTON PLANAR TRANSISTOR

pirgo 2N3054

Contextual Info: I ELECTRONICS INC ~ Ö 7 » T | D 0 H 3 5 t:iS DODODSS b 7 POWER TRANSISTOR ENGINEERING BULLETIN 2N3054 TYPE 2N3054, 4 AM P NP*L T E R M IN A L C O N N E C T IO N S SILICON SINGLE-DIFFUSED I BASE ? F M IT T E R CA SE CO LLECT O R SEATING "P L A N E 050 M AX*

Pirgo Electronics

Contextual Info: 0043592 A P I A PI “xâAOl 29 T —33~ô>l 00435^2 □□□□lai 1 |~ EL EC TR ONICS INC 13 ELECTRONICS INC DE POWER TRANSISTOR ENGINEERING BULLETIN " 10 AMP PNP PLANAR • TO-3 ’ . ' 65 WATTS at 100°C 60 MHZ typical MAXIMUM RATINGS at 25 °C AMBIENT

PG1083

Abstract: PG1070 PG1067 PG1068 PG1069 PG1071 PG1072 PG1073 PG1074 PG1075
Contextual Info: 0043 59 2 A P I ELECTRONICS INC . — - Ampower Semiconductor Corp. 375 Kings Highway 11787 : Hauppauge, N. Y. 20 A ‘-e 14 A- loo^s^s oooomt t I-' INTERIM BULLETIN s 3 de Su b je ct to Revision Without Notice -APRIL 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN

2N4862

Abstract: 2N4863 TG70 2N4864 Pirgo Electronics 95a0 95A048
Contextual Info: 0043 592 A P I ELECTRONICS TNC 95A0 48 T-g7-09_ P I ELECTRONICS INC . T3 DE 1^0435^2 DOOOOMfl T POWER TRANSISTORS ENGINEERING BULLETIN ID 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N 4863, 2 N 4 8 6 4 ,2 AMP NPN SILICON PLANAR POW ER TRANSISTORS

TRANSISTOR AH-10

Abstract: pgl203 PG1200 PG1201 PG1202 PG1203 PG1204 PG1205 PG1206 PG1207
Contextual Info: A P I ELECTRONICS INC 13 F T J d G 4 3 S cì2 DOOOOTl □ | '~33r 0 ^ _ INTERIM BULLETIN Su b je ct to R evision W ithout Notice Q 1P JR G POWER TRANSISTOR ENGINEERING BULLETIN -July 15, 1971 -ELECTRontcs inc. TYPE PG1200 thru PG1211, 5 A M P NPN SILICON PLANAR POWER TRANSISTORS

PG1206

Abstract: 33-Df PG1200 PG1201 PG1202 PG1203 PG1204 PG1205 PG1207 PG1208
Contextual Info: A P I ELECTRONICS INC 13 DE | DDMBSTS DODODTl 0 | ~33r oQ IN T E R IM B U L L E T IN Subject to Revision Without Notice •P LIR G O * TELECTROnfcS IHC. TYPE PG1200 thru PG1211, 5 AMP NPN SILICON PLANAR POWER TRANSISTORS • T O -6 6 • 70 M Hz ty p ic a l

PG1018

Abstract: PG1019 PG1020 PG1021 PG1022 PG1030 PG1031 PG1035 PGI023 Pirgo Electronics
Contextual Info: A P I EL ECT RO NIC S INC ' 13 1 DE | 0 0 4 B S CJS 0 D 0 0 0 7 ? S | ~ 3 *°9 7 7J - 7 ? 3 3 - 0 'f T ' - INTERIM BULLETIN S u b je c t to R e visio n W ithout Notice -July 15/ 1971 V POWER TRANSISTOR ENGINEERING BULLETIN n _ _ zo -o — I— oo TYPE PG1018 thru PG1035, 2 A M P NPN

SAP 17 TRANSISTOR VOLTAGE AND AMP

Abstract: 2N3054 pirgo 2N3054 SAP 17 TRANSISTOR Pirgo Electronics 104351-5
Contextual Info: A P I ELE CTR ON IC S INC 07 » F 1 00435=12 000G055 POWER TRANSISTOR ENGINEERING BULLETIN TYPE 2N 3054, 4 AMP NPN SILICON SINGLE-DIFFUSED POWER TRANSISTOR . High D issipation, P d = 29W 075 050 - 3 6 0 MIN High V oltage, BVCex = 9 0 V a l l d im e n s i o n s in i n c h e s

Contextual Info: [A F I E L E C T R O N IC S 13 Y - _ ^3 A 0 0 75f IN C DE~| aDM aS^S 0D 0007S 1 p IN T E R IM B U L LE T IN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN P I R G O E itC T R om cs inc. TYPE PG lbO l thru PG1017, 2 A M P NPN