PHP10N40 Search Results

PHP6N60

Abstract: 106AG BUK457-400B PHB10N40E PHP10N40 PHP10N40E PHW10N40E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP10N40E, PHB10N40E, PHW10N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

PHP6N60

Abstract: BUK457-400B PHB10N40E PHP10N40 PHP10N40E PHW10N40E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP10N40E, PHB10N40E, PHW10N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP10N40E, PHB10N40E, PHW10N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP10N40E, PHB10N40E, PHW10N40E Avalanche energy FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching

diode sy 400

Abstract: sy 320 diode
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N40E QUICK REFERENCE DATA SYM BO L N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable

PHP10N40E

Abstract: PHX5N40E
Contextual Info: Objective specification Philips Semiconductors PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP10N40E, PHB10N40E, PHW10N40E Avalanche energy FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION PHX5N40E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode PARAMETER field-effect power transistor in a full pack, plastic envelope featuring high

PHP10N40E

Abstract: PHX5N40E
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

BUK457-400B

Abstract: PHP10N40 PHW11N40
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

buk455

Abstract: BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454
Contextual Info: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER BUK105-50L REPLACED BY REASON FOR DELETION see BUK104/106-50L BUK105-50LP

Electronic ignitors for HID lamp circuits

Abstract: piezoelectric igniter IR2101 full bridge uba2030 igniter transformer Philips PR02 IGNITER COIL igniter mc34262 Ignition Transformer philips
Contextual Info: Subject : MHN-TD 70W Driver with UBA2030 Pages: 39 Summary : This report describes a lamp driver concept intended for the MHL-TD 70W lamp Metal Halide Lamp used in general lighting applications. The circuit is a cascade of a buck converter and commutator. The latter is driven by

PCA1318P

Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
Contextual Info: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product

PHX5N40

Abstract: PHP10N40 PHX10N40E PHX4N60
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX10N40E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package

PHP10N40

Abstract: BUK457-400B
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

BUK457-400B

Abstract: PHB10N40 PHP10N40
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high

T0-220AB

Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET

BUK444-200

Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
Contextual Info: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50

837 mosfet

Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET

BUK445-100A

Abstract: BUK445-600B
Contextual Info: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER REPLACED BY BUK105-50L see BUK104/106-50L BUK105-50LP see BUK104/106-50LP

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509