PHOTOTRANSISTOR 800 NM Search Results

Contextual Info: [*T i PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD422/423/424 PACKAGE DIMENSIONS DESCRIPTION The QSD42X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. R E FER E N C E SU RFACE FEATURES EMITTER .800 20.3 MIN

Contextual Info: CîXJ PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSC112/113/114 .126 3.20 .106(2.69) — _L L -EMITTER .042 (1.07) J ±.010 (±.25) t .800 (20.3) MIN I I f -COLLECTOR / .050 (1.27)'J REF I II r .203(5.16) .183(4.65) 0.30 (0.76) NOM The QSC11X is a silicon phototransistor encapsulated in

Contextual Info: SFH303 SFH303FA DAYLIGHT FILTER Siticon NPN Phototransistor Dimensions in inches mm GE006351 FEATURES • Especially suitable for applications - SFH 303:450 nm to 1100 nm - SFH 303 FA: 800 nm • High linearity • T13/ 4 (5 mm) LED plastic package • Also available on tape

Contextual Info: ÜÜDÔSD7 fl75 irhh -fc >'9'/'Sensors 2P3-30 2P3-30 l^ -^ N P N y ij3 > * h h 7 > y 7 $ Epitaxial Planar NPN Silicon Phototransistor • W fi"+;±@ /D im ensions Unit : mm 1) £ - ' 7 ^ J f ) £ f t A p=900nm , i & S A * 800~950nm (D^3tl-f5^T 5 o 2) 3)

PT4800

Abstract: PT493 PT4600
Contextual Info: PHOTOTRANSISTOR • PHOTOTRANSISTORS PT380 Single 1.17 5 0.9 5 100 Ix 1 x 10 7 20 ±20 860 PT460 35 50 -25 to +85 0.18 1.2 5 1 1 x 107 20 ±50 800 PT460F*' 35 50 -25 to +85 0.11 0.9 5 1 1 x 10‘7 20 ±50 860 35 50 -25 to +85 0.11 0.5 5 1 1 x 10'7 20 ±50

Contextual Info: CENTRCNIC INC» E-0 DIV CEnTRomc i 7— ¿¿f. 13E D | l^S E S Q TECHNICAL G0Q03m DATA C E N 800 5 J SHEET NPN E P IT A X IA L PLANAR PHOTOTRANSISTOR C H IP / Ay/ Collector, t=270i20 Ca l l Ch Symbol a r a c t e r is t ic s Co nd I tio n I c e = 0 . 5 ma C O L L E C T O R - E M 1T T E R

OPB200

Abstract: OP140 OP550
Contextual Info: Slotted Optical Switch OPB200 Features: x Housing material Opaque to visible and infrared light x Non–contact switching x Printed PCBoard mount Product Photo Here x 0.200” 5.1 mm slot width, 0.320” (8.1 mm) slot depth Description: The OPB200 contains an Infrared LED (890 nm) and a Phototransistor paired in a plastic housing.

Contextual Info: Slotted Optical Switch OPB200 Features: • • • • Housing material Opaque to visible and infrared light Non–contact switching Product Photo Here Printed PCBoard mount 0.200” 5.1 mm slot width, 0.320” (8.1 mm) slot depth Description: The OPB200 contains an Infrared LED (890 nm) and a Phototransistor paired in a plastic housing.

led and phototransistor pair number

Abstract: transistor 24 led phototransistor pair OP298 OP598 OPB100 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z
Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

led phototransistor 3 pin

Abstract: OP298 OP598 OPB100 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z led and phototransistor pair number
Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

led and phototransistor pair number

Abstract: OP598 transistor 24 led phototransistor pair OPB100 OP298 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z
Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

REFLECTIVE OBJECT SENSOR

Abstract: ir sensor for object detection using led ir sensor 0038 OBJECT SENSOR OPB609 OPB609AX OPB609GU OPB609RA OP508 LED 020 ir sensor
Contextual Info: Reflective Object Sensor OPB609 Series Features: • • • • OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

ir sensor for object detection using led

Abstract: vibra tite OPB609AX REFLECTIVE OBJECT SENSOR OPB609 OPB609GU OPB609RA reflective sensor 4 pin
Contextual Info: Reflective Object Sensor OPB609 Series Features: • • • • RA OPB609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

ir sensor 0038

Contextual Info: Reflective Object Sensor OPB609 Series Features: x x x x RA OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output GU AX Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

SLOTTED OPTICAL SWITCH

Abstract: OPB315 OPB315WZ OPB315L OP550
Contextual Info: Slotted Optical Switch OPB315 Series OPB315L Features: • • • • Lateral package Opaque black plastic 850 nm wavelength Choice of leads or wires Product Photo Here OPB315WZ Description: Each slotted optical switch in this series consists of an infrared emitting diode LED and a NPN silicon

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)

BPV11F

Abstract: 035R
Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

BPV11F

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

fototransistor ir

Abstract: phototransistor peak 550 nm
Contextual Info: 2012-08-17 Multi TOPLED with LED and Phototransistor-Detector Multi TOPLED mit LED und Fototransistor-Detektor Version 1.0 SFH 7225 Features: Besondere Merkmale: • Display function can be controlled by built-in phototransistor • Yellow LED • Dominant wavelength: 589 nm

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

npn phototransistor

Abstract: Silicon NPN Phototransistor TEKT5400S 8239 TSKS5400S
Contextual Info: TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm

fototransistor

Contextual Info: 2013-08-14 Infrared-Emitter 850 nm and Si-Phototransistor IR-Emitter (850 nm) und Si-Fototransistor Version 1.0 SFH 7250 Features: Besondere Merkmale: • Available on tape and reel • SMT package with IR emitter (850 nm) and Si-phototransistor • Suitable for SMT assembly

phototransistor peak 550 nm

Abstract: Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601
Contextual Info: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung