PHOTOTRANSISTOR 800 NM Search Results

Contextual Info: [*T i PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD422/423/424 PACKAGE DIMENSIONS DESCRIPTION The QSD42X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. R E FER E N C E SU RFACE FEATURES EMITTER .800 20.3 MIN

Contextual Info: CîXJ PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSC112/113/114 .126 3.20 .106(2.69) — _L L -EMITTER .042 (1.07) J ±.010 (±.25) t .800 (20.3) MIN I I f -COLLECTOR / .050 (1.27)'J REF I II r .203(5.16) .183(4.65) 0.30 (0.76) NOM The QSC11X is a silicon phototransistor encapsulated in

Contextual Info: SFH303 SFH303FA DAYLIGHT FILTER Siticon NPN Phototransistor Dimensions in inches mm GE006351 FEATURES • Especially suitable for applications - SFH 303:450 nm to 1100 nm - SFH 303 FA: 800 nm • High linearity • T13/ 4 (5 mm) LED plastic package • Also available on tape

OPB200

Abstract: OP140 OP550
Contextual Info: Slotted Optical Switch OPB200 Features: x Housing material Opaque to visible and infrared light x Non–contact switching x Printed PCBoard mount Product Photo Here x 0.200” 5.1 mm slot width, 0.320” (8.1 mm) slot depth Description: The OPB200 contains an Infrared LED (890 nm) and a Phototransistor paired in a plastic housing.

led and phototransistor pair number

Abstract: transistor 24 led phototransistor pair OP298 OP598 OPB100 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z
Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

led and phototransistor pair number

Abstract: OP598 transistor 24 led phototransistor pair OPB100 OP298 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z
Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

REFLECTIVE OBJECT SENSOR

Abstract: ir sensor for object detection using led ir sensor 0038 OBJECT SENSOR OPB609 OPB609AX OPB609GU OPB609RA OP508 LED 020 ir sensor
Contextual Info: Reflective Object Sensor OPB609 Series Features: • • • • OP609 emitter 940 nm IR-LED Unfocused for sensing diffuse surface Low-cost plastic housing High-speed phototransistor output Description: The OPB609 consists of an 940 nm, Light Emitting Diode (LED) and an NPN silicon Phototransistor, which are

SLOTTED OPTICAL SWITCH

Abstract: OPB315 OPB315WZ OPB315L OP550
Contextual Info: Slotted Optical Switch OPB315 Series OPB315L Features: • • • • Lateral package Opaque black plastic 850 nm wavelength Choice of leads or wires Product Photo Here OPB315WZ Description: Each slotted optical switch in this series consists of an infrared emitting diode LED and a NPN silicon

BPV11F

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

fototransistor

Contextual Info: 2013-08-14 Infrared-Emitter 850 nm and Si-Phototransistor IR-Emitter (850 nm) und Si-Fototransistor Version 1.0 SFH 7250 Features: Besondere Merkmale: • Available on tape and reel • SMT package with IR emitter (850 nm) and Si-phototransistor • Suitable for SMT assembly

phototransistor peak 550 nm

Abstract: Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601
Contextual Info: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung

9260 transistor

Contextual Info: SFH 9260 Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector 6.2 5.8 3.4 3.0 4.2 3.8 2.1 1.7 0.0.1 0.15 0.13 Vorläufige Daten/Preliminary Data 0.5 0.3 6 5 4 1

VEMT2020

Abstract: npn phototransistor VEMT2000X01 VEMT2020X01 IPC 7351 2 pin phototransistor P 250 20594 VSMB2000X01 VEMT2520 VEMT2000
Contextual Info: VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm to

fototransistor

Abstract: phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260
Contextual Info: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung

Contextual Info: VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm

VSMB20

Abstract: VSMG2020 VEMT2000X01 VSMB2000X01 VSMY2850 VEMD25
Contextual Info: VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm

TEFT4300

Abstract: TSAL4400 TSUS4300
Contextual Info: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

TRANSISTOR SMD catalog

Abstract: OP522 darlington transistor SMD NPN phototransistor 450nm smd npn darlington OP525DA LED photo darlington transistor IC PACKAGE 935 diode smd OP525F OP570
Contextual Info: Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525, OP525DA, OP525F OP525 and OP525DA OP525F Features: • • • • • • • • High Speed and High photo sensitivity Fast response time 1210 package size High Current Gain Water clear and black lens choices

photo darlington sensor

Abstract: high sensitivity reflective phototransistor OP525F smd led 1210 OP525DA optical encoders
Contextual Info: Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525, OP525DA, OP525F OP525 and OP525DA OP525F Features: • • • • • • • • High Speed and High photo sensitivity Fast response time 1210 package size High Current Gain Water clear and black lens choices

TEST2600

Abstract: TSSS2600 ic 8253
Contextual Info: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 3.6 x 2.2 x 3.4 • High radiant sensitivity • Daylight blocking filter matches with 940 nm

LED photo darlington transistor IC PACKAGE

Abstract: phototransistor 450nm OP525DA OP525F transistor SMD ee reflective lens phototransistor
Contextual Info: Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525, OP525DA, OP525F OP525 and OP525DA OP525F Features: • • • • • • • • High Speed and High photo sensitivity Fast response time 1210 package size High Current Gain Water clear and black lens choices

Q62702-P1819

Contextual Info: GaAlAs-IR-Lumineszensdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung

Q62702-P1819

Abstract: 0083CA
Contextual Info: GaAlAs-IR-Lumineszensdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung