PHOTOLITHOGRAPHY Search Results
PHOTOLITHOGRAPHY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| MC-306Contextual Info: Crystal unit SMALL SMD LOW / MEDIUM-FREQUENCY CRYSTAL UNIT MC-306 • High-density mounting-type SMD. • Photolithography finished allows uniform and stable performance. • Excellent reliability and environmental capability. Actual size Specifications characteristics | Original | MC-306 MC-306 | |
| C-005R
Abstract: 100 khz crystal C-001R C-002RX C-004R 
 | Original | C-001R C-002RX C-004R C-005R C-005R 100 khz crystal C-001R C-002RX C-004R | |
| planar spiral coil
Abstract: MicroMetrics HP 8510 MMI301 MMI-300 MMI304 MMI302 MMI300 MMI303 300 Series 
 | Original | MMI301 MMI302 MMI303 MMI304 planar spiral coil MicroMetrics HP 8510 MMI301 MMI-300 MMI304 MMI302 MMI300 MMI303 300 Series | |
| GH15
Abstract: gh15/17/18.1 
 | Original | 50WVDC 100WVDC GH15 gh15/17/18.1 | |
| HSH1500KS
Abstract: MA150 MA200 Ultratech 250 W canon power 
 | Original | HSH1500KS DS-183 HSH1500KS MA150 MA200 Ultratech 250 W canon power | |
| nikon
Abstract: nikon nsr 1505 NSR-1505 USH1002FNL nikon NSR nikon STEPPER HSH1002NEO nikon NSR g8 
 | Original | HSH1002NEO DS-179 nikon nikon nsr 1505 NSR-1505 USH1002FNL nikon NSR nikon STEPPER HSH1002NEO nikon NSR g8 | |
| HSH1500CIEO
Abstract: SUV1501CIL canon 350 
 | Original | HSH1500CIEO DS-182 HSH1500CIEO SUV1501CIL canon 350 | |
| Contextual Info: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing | Original | FPD750 FPD7500 FPD750 mx750Î OT343, 12GHz 12GHzlable FPD750-000 FPD750-000SQ | |
| lockin amplifier
Abstract: pbs photoconductor lead selenide Model 289K 77058 70703 
 | Original | ||
| MC-405
Abstract: MC-406 6571a 
 | Original | MC-405/406 10-6/year MC-405 MC-406 MC-406 MC-405 6571a | |
| C-001R
Abstract: C-002RX C-004R C-005R 
 | Original | C-001R C-002RX C-004R C-005R 10-6/year C-001R C-002RX C-004R C-005R | |
| Contextual Info: CRYSTAL UNIT TUNING FORK CH-308 - Photolithography finished allows uniform stable performance - Excellent shock resistance and environmental capability - Low power consumption - Suitable for time-keeping of clock and micro computer tR o H S • ELECTRICAL SPECIFICATIONS | OCR Scan | CH-308 500MQ CH-206 CS-146 CS-306 CS-519 | |
| Contextual Info: SMD LOW/MEDIUM-FREQUENCY QUARTZ CRYSTAL MC-405/MC-406 • High-density mounting-type SMD. • Photolithography finish allows uniform, stable performance. • Excellent shock resistance and environmental capability. • Capable of covering low-frequency range from 20 kHz to 165 kHz. | OCR Scan | MC-405/MC-406 3000G MC-405 MC-406 | |
| Contextual Info: CYLINDER LOW/ MEDIUM-FREQUENCY QUARTZ CRYSTAL C-2-TYPE/C-TYPE C-001R C-002RX • Photolithography finish allows uniform and stable performance. • Excellent shock resistance and environmental capability. • Respond to an extensive range of frequency, from 20 kHz to | OCR Scan | C-001R C-002RX 04ppm 3000G | |
|  | |||
| Contextual Info: MODEL : TO-306PS SERIES SURFACE MOUNT TYPE LOW FREQUENCY PLASTIC MOLDED PACKAGE # High density mounting type SMD OS # Photolithography finish allows uniform and stable performance 2.76 T3 8K # Excellent reliability and environmental capability # 2.54mm thickness which is equal to SMD type IC | Original | O-306PS 768KHz 000KHz 20ppm 50ppm 768KHz 3000G 54Max | |
| DRAMs
Abstract: Dram 168 pin EDO buffered PQFP-128 Multibank - DRAM Signal Path Designer Bus repeater 64MEDO 
 | OCR Scan | 64M-EDO 4/x72 DRAMs Dram 168 pin EDO buffered PQFP-128 Multibank - DRAM Signal Path Designer Bus repeater 64MEDO | |
| 6571aContextual Info: Crystal unit SMD LOW/ MEDIUM-FREQUENCY CRYSTAL UNIT MC-405/MC-406 • High-density mounting-type SMD. • Photolithography finished allows uniform, stable performance. • Excellent shock resistance and environmental capability. • Capable of covering low-frequency range from 20 kHz to 165 kHz. | OCR Scan | MC-405/MC-406 3000G MC-405 MC-406 6571a | |
| 6571aContextual Info: Crystal unit SMD LOW/ MEDIUM-FREQUENCY CRYSTAL UNIT MC-405/MC-406 • High-density m ounting-type SM D . • Photolithography finished allows uniform, stable performance. • Excellent shock resistance and environmental capability. • Capable of covering low-frequency range from 20 kHz to 165 kHz. | OCR Scan | MC-405/MC-406 6571a | |
| epson 32.768KHZ CRYSTALS
Abstract: mc306 crystal DG00003EC 32.768khz crystal MC306 Quartz Crystal 32.768KHz 21FF QUARTZ 32,768KHz epson photolithography 32.768khz crystal data sheet 
 | Original | MC306 20kHz-165kHz 10ppm 20ppm 50ppm 100ppm 04ppm/ 3000G 768kHz MC306 epson 32.768KHZ CRYSTALS mc306 crystal DG00003EC 32.768khz crystal Quartz Crystal 32.768KHz 21FF QUARTZ 32,768KHz epson photolithography 32.768khz crystal data sheet | |
| pseudomorphic HEMT
Abstract: fpd7612general FPD7612 MIL-HDBK-263 AlGaAs resistivity 
 | Original | FPD7612 FPD7612General FPD7612 25mx200m 12GHz 18GHz 22-A114. MIL-STD-1686 MIL-HDBK-263. pseudomorphic HEMT MIL-HDBK-263 AlGaAs resistivity | |
| FPD3000
Abstract: MIL-HDBK-263 
 | Original | FPD3000 FPD30002W FPD3000 25mx3000m 12GHz 42dBm FPD3000-000 MIL-HDBK-263 | |
| pseudomorphic HEMT
Abstract: FPD2250 MIL-HDBK-263 InP transistor HEMT 
 | Original | FPD2250 FPD22501 FPD2250 25mx2250m 32dBm 12GHz 42dBm FPD2250-000 pseudomorphic HEMT MIL-HDBK-263 InP transistor HEMT | |
| ot 306
Abstract: CS-306 CH-308 CS-405 SUNNY TR 308 OF cs 308 CH-206 CS-206 CS306 
 | OCR Scan | CH-206 CH-308 CH-206, CH-308, CS-206, CS-306 768kHz, 000kHz 50ppm 04ppm/C2 ot 306 CS-306 CH-308 CS-405 SUNNY TR 308 OF cs 308 CH-206 CS-206 CS306 | |
| ED98
Abstract: 64MEDO 
 | OCR Scan | 13urst-EDO 64M-EDO ED98 64MEDO | |