PHILIPS GSM IC Search Results

microcontroller interface with gsm module

Abstract: gsm signal amplifier GSM Transceiver chip Firmware interface GSM GSM RF module gsm module with microcontroller GSM Transceiver RF gsm transceiver IC "RF Transceiver" gsm module datasheet
Contextual Info: Philips Semiconductors Semiconductors for Wireless Communications Introduction GSM GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS DIGITAL CELLULAR ICs In 1992 Philips produced the first single-chip baseband signal processor for GSM. Today our low voltage GSM ICs cover

PCD5070

Abstract: baseband GSM BTS PCD5071 GSM signal processing block bts gsm rx unit digital mobile radio GSM software defined radio msc in gsm msc mobile switching center PCF5081
Contextual Info: PHILIPS INTERNATIONAL t,7E D • 711DaEt, QOtiSSlt, TT4 ■ Philips Semiconductors RF Communication* Product» PHIN Preliminary specification GSM baseband processors for digital mobile cellular radio _ PCF5081/PCF5082 GSM Baseband Signal processors

smd diode HB

Abstract: BA891 CGY2014ATW HTSSOP20 philips application
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2014ATW GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Nov 28 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2014ATW FEATURES GENERAL DESCRIPTION

philips 561

Abstract: PCF5077T SSOP16 BGY2
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF5077T Power amplifier controller for GSM and PCN systems Preliminary specification File under Integrated Circuits, IC17 1997 Nov 19 Philips Semiconductors Preliminary specification Power amplifier controller for GSM and PCN systems

MGT269

Abstract: PCF50732 uaa3535 cdi engine analog to digital converter vhdl coding marking code C3 SMD ic st smd diode marking code G11 verilog code to generate sine wave BUZAMP DCS1800
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF50732 GSM baseband and audio interface Product specification Supersedes data of 1999 May 03 File under Integrated Circuits, IC17 2001 Jan 22 Philips Semiconductors Product specification GSM baseband and audio interface CONTENTS

fca173

Abstract: h2lb FCA175 BA891 CGY2014TT philips rf manual HTSSOP20
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2014TT GSM/DCS/PCS power amplifier Product specification Supersedes data of 2000 Apr 11 File under Integrated Circuits, IC17 2000 Oct 16 Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES

gsm transceiver

Abstract: PHILIPS databook MMIC BSR14 CGY2013G LQFP48 PHP212L SA1620 1210 pressure sensor ics
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G FEATURES

ICS 1210 Pressure Sensor

Abstract: 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14 CGY2010G CGY2011G
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G

PCA5075

Abstract: SSOP20
Contextual Info: PHILIPS INTERNATIONAL b?E D • ?110A2b DQbSlSO Sfil « P H I N Philips Sem iconductors RF Communications Products Preliminary specification Power amplifier controller for GSM systems FEATURES PCA5075 QUICK REFERENCE DATA .CMOS low power SYMBOL PARAMETER MIN. TYP. MAX. UNIT

Power Amplifier GSM

Abstract: smd transistor A1 HB CGY2015 SOT629-1 h2lb BA891 philips rf manual power amplifier circuit diagram with pcb layout power amplifier handbook schematics for a PA amplifier
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2015 GSM/DCS/PCS power amplifier Preliminary specification 2002 Mar 12 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2015 FEATURES GENERAL DESCRIPTION • 3.5 V nominal supply voltage The CGY2015 is a dual GaAs Monolithic Microwave

Contextual Info: Philips Semiconductors Preliminary specification Power amplifier controller for GSM and PCN systems PCF5075 FEATURES • CMOS low-voltage, low-power • Can be used in burst mode with power-down • Three-wire serial bus interface with the bus available in

UAA3536

Abstract: CGY2015 HVQFN40 GSM Transceiver ZERO-IF PCF506
Contextual Info: Philips Semiconductors The UAA3536 is a low-power GSM triple-band transceiver based on the N-ZIF Near-Zero Intermediate Frequency RF architecture. The UAA3536 is a GSM900/1800/1900 GPRS class 12-capable single-chip RF solution, with edge 4RX capabilities.

Contextual Info: Philips Semiconductors Preliminary specification Image rejecting front-end for GSM applications UAA2073M Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in I and Q IF channels that phase shift the IF by 45° and 135°

VCO MQE001

Abstract: MQE001 murata mqe001 alps vco VTCXO external charge pump on fpc toyocom 45 filter UMA1015AM UMA1015M UMA1018M
Contextual Info: USER MANUAL UMA1015AM Low Voltage Dual Synthesiser CTT/97001 Guidance to Assembly and Operation Preliminary Technical Report Pascal Hugues Technical Marketing Telecommunication IC’s Caen, France Date: May 23rd, 1997 Philips Semiconductors Philips Semiconductors

2SA1638

Abstract: DCS1800 SA1620 SA1638 SA1638BE
Contextual Info: INTEGRATED CIRCUITS SA1638 Low voltage IF I/Q transceiver Product specification IC17 Data Handbook Philips Semiconductors 1997 Sept 03 Philips Semiconductors Product specification Low voltage IF I/Q transceiver SA1638 • High performance on-board integrated receive filters with

i1695

Abstract: LQFP48 SA1920 SR01616
Contextual Info: INTEGRATED CIRCUITS SA1920 Dual-band RF front-end Product specification Supersedes data of 1998 Apr 07 IC17 Data Handbook Philips Semiconductors 1999 Mar 02 Philips Semiconductors Product specification Dual-band RF front-end SA1920 DESCRIPTION FEATURES • Low current consumption

SMD-C6

Abstract: MQE721-178 alps vco SMD-C9 MQE721 MQE001 MQE7 BUS3WIRE.EXE alps dect data interface board book cook
Contextual Info: APPLICATION NOTE UMA1022M Low Voltage, Low Noise Dual Frequency Synthesiser AN98102 Philips Semiconductors Philips Semiconductors UMA1022M Dual Frequency Synthesizer Application Note Abstract The UMA1022M is a low voltage, low noise dual synthesiser. It is intended for radiocommunication

BSR56

Contextual Info: • bbS3T31 D03SS33 311 H A P X N AMER PHILIPS/DISCRETE BSR56 BSR57 BSR58 b7E D y v N-CHANNEL FETS Symmetrical silicon n-channel depletion type ju nctio n field-effect transistors in a plastic m icrom iniature envelope intended fo r application in thick and th in -film circuits. The transistors are intended fo r lowpower, chopper or switching applications in industrial service.

R&S smhu rf generator

Abstract: MQE001 ALPS VCO Dect 827 alps dect data interface board murata mqe001 smd tcxo 13,824mhz Toyocom Crystal Filters SMD-C9 UMA1021M
Contextual Info: APPLICATION NOTE UMA1021M Low Voltage Frequency Synthesizer AN96083 Philips Semiconductors Philips Semiconductors UMA1021M Low Voltage Frequency Synthesizer Application Note Abstract The UMA1021M is a low noise, low power 2.2 GHz single synthesizer. It is intended for radiocommunication

13.56 MHz RFID reader ic 2 meter range

Abstract: Philips Mifare Plus how to design 13.56 MHz RFID tag mf rc500 Automatic Railway Gate Control system, 900 mhz UHF rfid reader mobile phone handheld bus ticketing machine mifare plus card RC500 mobile rfid payment 125
Contextual Info: Philips Semiconductors On the Move Spring 2001 Award-winning application links VIGIK access cards with mobile phones In this issue Page Page Page Page Page Page Page Page Page Page Page 2: 3: 4: 5: 6: 7: 8: 9: 10: 11: 12: MIFARE dual interface cards for VIGIK, Editorial

philips 8051 microcontroller

Abstract: introduction to microcontroller 89C51 ISO9001-Certified philips measurement of voltage using 8051 microcontroller Ashling CTS51 FEATURES OF microcontroller 89C51 opcodes 89c51 8751 EPROM measurement of power using 8051 microcontroller all 89c51 microcontroller
Contextual Info: CTS51 Microprocessor Development Systems for Philips Microcontrollers Ashling’s CTS51 Universal Microprocessor Development System for Philips Microcontrollers Features of Ashling’s Microprocessor Development systems: ♦ Integrated Development Environment for Philips 8051 under Windows

BUK555-60A

Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> bbSB'lBl ODBOflDS bSR H A P X Product Specification Philips Semiconductors BUK555-60A/B P o w e rM O S tra n s is to r L o g ic lev el F E T _ G E N E R A L D E S C R IP T IO N N-channel enhancement mode logic level field-effect power

DECT RF Transceiver 1.9 ghz

Abstract: RF MODULE CIRCUIT DIAGRAM dect BGB100 GSM-900 SOT649 BGB1000
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGB100 0 dBm TrueBlue radio module Preliminary specification 2002 Jan 03 Philips Semiconductors Preliminary specification 0 dBm TrueBlue radio module BGB100 FEATURES APPLICATIONS • Plug-and-play Bluetooth class 2 radio module, needs

TRansistor L 701

Abstract: vmk 5 pin BUK995-60A
Contextual Info: Philips Components Data sheet Preliminary specif ication status date of issue March 1991 9 0 BUK995-60A PowerMOS transistor Logic Level SensorFET 5bE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode logic level field-effect power transistor in a 5 pin plastic