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    CGY2010G Search Results

    CGY2010G Datasheets (3)

    Philips Semiconductors
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CGY2010G
    Philips Semiconductors GSM 4 W Power Amplifier Original PDF 76.96KB 12
    CGY2010G
    Philips Semiconductors GSM 4 W Power Amplifier Original PDF 238.47KB 8
    CGY2010G
    Philips Semiconductors GSM 4 W power amplifiers Scan PDF 285.65KB 9

    CGY2010G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LQFP-48 footprint

    Abstract: schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000 CGY2010G
    Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% • Integrated power sensor driver The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power


    OCR Scan
    pca5075sa1620cgy2010gcgy2011g+9lqfp-48 footprintschematics for a pa amplifier class c7x7x1.4n004schematics for a pa amplifier27 mhz power amplifierpower amplifier33pfc5000 PDF

    ICS 1210 Pressure Sensor

    Abstract: 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14 CGY2010G CGY2011G
    Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G


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    cgy2010gcgy2011g-129uctorssca50+9647021/1200/02/pp12ics 1210 pressure sensor1210 pressure sensor icsgsm transceiverschematics for a pa amplifierdesign of multi section directional couplergsm signal amplifierpressure sensor sp 20bsr14 PDF

    Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip


    Original
    cgy2010gmgb764 PDF

    HF power amplifier

    Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
    Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip


    OCR Scan
    cgy2010gpca5075sa1620711062b+5hf power amplifierze 003 iclqfp48lqfp64lqfp80 PDF

    NE5205

    Abstract: PCD5032 NE571 in SA612
    Contextual Info: Philips Semiconductors Semiconductors for Wireless Communications _ . Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION


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    cgy2010gcgy2011gcgy2023gne570+10ne571ne572ne575ne576ne577ne578ne5205pcd5032ne571 insa612 PDF

    NE571

    Abstract: NE570 equivalent ne571 application note NE572 NE578 NE615 PCD5097 application notes NE575 NE5219 UMA1020M
    Contextual Info: Philips Semiconductors Semiconductors for Wireless Communications Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION


    Original
    cgy2010gcgy2013gcgy2011gcgy2023g+14cgy2021gne570sa570ne571sa571ne570 equivalentne571 application notene572ne578ne615pcd5097application notes ne575ne5219uma1020m PDF