PHILIPS BUK 100 Search Results

BUK475-600B

Abstract: tipi transistor 3909
Contextual Info: Philips Components Data sheet status Preliminary specification date of issue March 1991 PHILIPS BUK 475-600B PowerMOS transistor SbE » INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BUK475-400B

Abstract: LD25C BUK475 3909
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE D i- 1 GENERAL DESCRIPTION N-channel enhancem ent m ode

D-25CF

Abstract: 3909
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue M arch 1991 BUK 539-60A PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE i- 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

rm3 transistor

Abstract: BUK478
Contextual Info: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK 476-800A/B PowerMOS transistor Replaces BUK446-800A/B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

MOSFET IGBT THEORY AND APPLICATIONS

Abstract: tv deflection theory PHILIPS MOSFET igbt BUK7508-55 equivalent SOT404 mosfet cross reference "Power Semiconductor" Philips igbt philips PHILIPS MOSFET PowerMos transistors TO220 package
Contextual Info: DATA SHEET Introduction PowerMOS Transistors including TOPFETs and IGBTs 1996 Dec 12 Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Introduction therefore be identified easily as they have a 4 digit ‘type code’ after the BUK prefix.

DIODE B97

Abstract: BUK446-800A BUK446-800A application BUK476 BUK476-800A BUK476-800B 3909
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue M arch 1991 - 3 9 - 0 ? BUK 476-800A/B PowerMOS transistor R e p laces B U K 44 6-8 00 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: -7 - 3 9 - 0 9 Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK 475-500B PowerMOS transistor Replaces BUK445-500A 'S MILIPS INrrRNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

D4MB

Contextual Info: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 Sfc.E D • 711Qfl2b □ D4 Mb bti 17T « P H I N BUK 476-1000A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK445-500

Abstract: BUK475-500B BUK475
Contextual Info: - 7= 3 9 - 0 9 Philips Components Data sheet status Prelim inary specification BUK 475-500B PowerMOS transistor date of issue March 1991 R eplaces B U K 4 4 5 -5 0 0 A 'i H IL IP S GENERAL DESCRIPTION N -channel en han cem en t m ode field-effect pow er transistor in a

S0T426

Abstract: INCOMING QUALITY PLANNING FORMAT
Contextual Info: Philips Semiconductors PowerMOS transistors , ^ , . . . mn>- „ . Introduction including TOPFETs and IGBTs_ QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by:

TOPFETs FETs

Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Introduction QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by:

BUK102-50GS

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE » • 7110fl2ti 0GL.3Ö34 b5D BIPHIN Philips Semiconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET In a 3 pin plastic envelope, intended as a general purpose switch for

BUK552-100A

Abstract: BUK552-100 BUK562-100A buk 154 BUK562-100
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION BUK562-100A QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

BUK657-600A

Contextual Info: ^53=131 D0E071S 1 • 5SE D N AMER PHILIPS/DISCRETE P o w e rM O S tra n s is to r F ast R ec o v e ry D io d e F E T B U K 657-600A B U K 657-600B B U K 657-600C G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode

BUK657

Abstract: BUK657-500A BUK657-500B BUK657-500C T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D ^53^31 QD20710 T PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

mst 702 lf

Abstract: BUK995-60A
Contextual Info: Philips Com ponents Data sheet Preliminary specif ication status date of issue March 1991 90 BUK995-60A PowerMOS transistor Logic Level SensorFET SbE ]> P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

k541

Abstract: K54-16 BUK541 BUK541-60A BUK541-60B
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 B U K 5 4 1 - 6 0 A /B PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

k54160a

Abstract: BUK541 BUK541-60A BUK541-60B k541 TRANSISTOR k541
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 B U K 5 4 1 - 6 0 A /B PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode logic level field-effect power transistor in a plastic full-pack

553-50A

Abstract: BUK553-50A BUK553-60A BUK553-60B BUK55 buk553
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK543

Abstract: BUK543-60 BUK543-60A BUK543-60B DC4010
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BUK552-60

Abstract: BUK552-60A BUK562-60A
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

BUK552

Abstract: BUK552-100A BUK552-100B
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK552

Abstract: BUK552-60A BUK552-60B BUK552-60
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies