BUK55 Search Results

Contextual Info: N AUER PHILIPS/DISCRETE blE P • bbSSTSl 0 Q 3 D 7 fl5 T3 Q M A P X Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: N AMER PHILIPS/DISCRETE bR E » bb53R31 0030625 4M7 « A P X Preliminary Specification Philips Semiconductors BUK556-60H PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK555-50A

Abstract: BUK555-50B T0220AB
Contextual Info: N AMER PH IL I PS /D IS CR ET E SSE J> m bfciS3ci31 0D20t3S G • PowerMOS transìstor Logic Level FET BUK555-50A BUK555-50B T “- 3 ? - y 3 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK551-60A

Abstract: BUK551-60B T0220AB fet transistor ft
Contextual Info: Philips Com ponents D ata sheet status Preliminary specification d ate of issue March 1991 5bE PINNING - T0220AB PIN m 7110fl2b GO MM b ö M 465 • PHIN SYMBOL PARAMETER MAX. MAX. V ds Id P« T. BUK551 Drain-source voltage Drain current DC Total power dissipation

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK551-100A

Abstract: BUK551-100
Contextual Info: P ro d u ct S pe cifica tion P hilip s S em ico n d u cto rs PowerMOS transistor BUK551-100A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

S10080

Abstract: TJT-120
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in

LTHJ

Abstract: TRANSISTOR D 819
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-60A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

k 552

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK552-60A/B Logic level GENERAL DESCRIPTION N -ch an nel e n h an cem en t m ode logic level fieid-effect pow er transistor in a plastic en velo pe.

BUK555-100A

Abstract: BUK555-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 7110flSb DDb4E4b 644 • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

BUK553-100A

Abstract: BUK553-100B
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110a2b 00^4531 313 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET_ •_ GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • b b S S ^ l 0Q3D7^S ^flT W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET_ _ _ GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK551-60A/B N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device Is intended for use in Switched Mode Power Supplies

BUK555-200A

Abstract: BUK555-200B T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE b'IE P • bbS3T31 QGaDfilS ST6 ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

BUK555-60A

Abstract: BUK555-60B T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE b'îE D • ^53*131 0030005 t.S'ì « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level GENERAL DESCRIPTION N-chanrtel enhancement mode

BUK555-100A

Abstract: transistor c 839 BUK555 transistor M 839
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK553-100A/B Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

D 843 Transistor

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

buk552

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

buk555-60a

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: ^Emi-L-onaucioi U-^ , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUK553-60A/B PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power