PH6660 Search Results

Contextual Info: J PH6659 PH6660 PH6661 V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistors, in TO-92 variant envelopes and designed for application as low power, high-frequency inverters and line drivers. Features •

S 170 TRANSISTOR

Contextual Info: MIE D I 711QfiBb 002b7bl T B P H I N PH6659 PH6660 PH6661 PHILIPS INTERNATIONAL T -3 S -2 S N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistors, in TO-92 variant envelopes and designed for application as low power, high-frequency inverters and line drivers.

PH6659

Abstract: PH6660 PH6661 max3560
Contextual Info: PH6659 PH6660 P H 6661 Jy N-CHANNEL ENHANCEMENT M ODE VERTICAL D-MOS TRAN SISTO R N-channel enhancement mode vertical D -M O S transistore, in TO -92 variant envelopes and designed for application as low power, high-frequency inverters and line drivers. Features

PH6659

Abstract: PH6660 PH6661
Contextual Info: MI E » 7 1 1 Q û E t G0 5 b 7 b l I PHILIPS PH6659 PH6660 PH6661 T BPHIN INTERNATIONAL T-3S-2S N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistors, in TO-92 variant envelopes and designed for application as low power, high-frequency inverters and line drivers.

82C250T

Abstract: BS170 SMD BC547b smd 59012 h 331 pc74hct4066
Contextual Info: Application Note CAN Physical Layer Concepts for the P8xC592 Microcontroller Harald Eiselc Product Conccpt & Application Laboratory Hamburg, F. R. Germany Keywords Controller Area Network, physical layer. ISO drafts, rwo-wire bus line, differential transceiver. P8xC592 microcon­

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

KP902A

Abstract: kp904a BFW96 s0212 3N138 MFE3002 3N138 mosfet 3SK72 KT904 SD2150E
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS IDss Max (V) tA) PD Max (W) 50m 50m 50m 50m 50m 50m 50m 1.0 1.0 250m 1.0 250m 40m 70m 360m 200m 150m 150m 150m 150m 150m 360m 20 20 625m 20 1.0 0.36 1.0 ros (on) (Ohms) 9FS Min (S) VGS(th) Clsa t, Max Max

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

2106a

Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI