PH1617 Search Results

22iJ

Abstract: F16 DIODE b 595 transistor
Contextual Info: Atiwm m an A M P com pany Wireless Bipolar Power Transistor, 30W 1.6-1 .7 GHz PH1617-30 Features • • • • • D e sig n e d fo r l.in ea r A m plifier A p p licatio n s -30 cl Be T y p 3 rd I M I at 3 0 W atts I’ KP C o m m o n K m itter C la ss AB O p e r a tio n

Contextual Info: PH1617-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)65â V(BR)CBO (V)65 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)13# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition)25

TFK 082

Abstract: J1 TRANSISTOR
Contextual Info: ß tfk c m 1 m a n A M P com pany Wireless Bipolar Power Transistor, 12W PH1617-12N 1.6-1.7 GHz y/b Features £4 /7 '25 • • • • • • • ( 18 . 4 2 ) NPN Silicon M icrow ave P ow er T ran sisto r D esigned fo r L inear A m plifier A pplications

c 1685 transistor

Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60
Contextual Info: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors

TRANSISTOR 3FT 81

Abstract: T20 64 diode transistor 81 110 w 63 transistor 9163
Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 2W 1.6-1 .7 GHz PH1617-2 Features • • • • • • Designed for Linear Amplifier Applications Class AB: -33 dBc 'I’yp 3rd 1MD at 2 Watts PKP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration

1445s

Abstract: transistor D 1761 PH1617
Contextual Info: ^fccO'H m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.6- 1.7 GHz _ .744 _ 18.90 Features • • • • • • PH1617-10 Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PKP Class A. +49 dBm Typ 3rd Order Intercept Point

transistor 9163

Abstract: lN914B lN914 PH1617-2 BIPOLAR M 846 m 32 ab transistor transistor 1555
Contextual Info: Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 2W PH1617-2 v2.00 Features l l l l l l Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 2 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching

Contextual Info: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system

PH1617-30

Contextual Info: PH1617-30 Wireless Bipolar Power Transistor 30W, 16 -1.7 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • Designed for linear amplifier applications -30 dBc typ. 3rd IMD at 30 W PEP Common emitter Class AB operation Internal input impedance matching

transistor Common emitter configuration

Abstract: PH1617-60
Contextual Info: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system

UU15

Abstract: tic 260 PH1617-60 "Power TRANSISTOR"
Contextual Info: PH1617-60 M/A-OOM Wireless Power Transistor 60 Watts, 1615- 1685 MHz = & Microwave Products Outline Drawing1 Description M/A-COM’s PH1617-60 is a silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1615 to 1685 MHz range. This

PH1617-2

Contextual Info: PH1617-2 Wireless Bipolar Power Transistor 2W, 16 -1.7 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • Designed for linear amplifier applications Class AB: -33 dBc typ. 3rd IMD at 2 W PEP Class A: +44 dBm typ. 3rd order intercept point

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM

TRANSISTOR BV 32

Abstract: Bv 42 transistor PH1617-30 K010 G177
Contextual Info: an AMP ZE comDanv r = Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 30W PHI 617-30 Features l l l l l Designed for Linear Amplifier Applications -30 dBc Typ 3rd IMD at 30 Watts PEP Common Emitter Class AB Operation Internal Input Impedance Matching Diffused Emitter Ballasting

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

MAAM-008863

Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Contextual Info: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America

93C24

Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 4W 1.6 -1.7 GHz Features • • • • • • • • Symbol Rating '♦ 60 V VCES 60 V Emitter-Base Voltage V EBO 3.0 V 'c 0.7 A 19.5 W ir ' ! d LH] T 1LR ii LMi r - L H lU •HJ' 'f K l BA S i G/B