PH-15 TRANSISTOR Search Results

712 transistor smd sot23

Abstract: 33m ph diode smd transistor 718 diode PH 33m
Contextual Info: Value Code Inductor ph Code .01 .012 .015 .018 000 Oil 001 009 ph Code pFID. .10 .12 .15 .18 010 012 015 018 _ _ . _ .022 002 .22 022 _ _ - _ .027 007 .27 027 - _ .033 003 .33 033 _ - - - .039 009 .39 039 . _ _ - _ .047 004 .47 047 _ _ - _ .056 005 .56 056

Contextual Info: Aß Avionics Pulsed Power Transistor PH 1090-15S Preliminary 15 Watts, 1030-1090 MHz, 10 jis Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration

Contextual Info: subject to change without notice September 15, 2003 3260 Data Sheet 27631.50 ADVANCE INFORMATION 2-WIRE, CHOPPER-STABILIZED, PRECISION HALL-EFFECT BIPOLAR SWITCH Suffix Code 'LH' Pinning (SOT23W) 3 X NC NO (INTERNAL) CONNECTION Dwg. PH-003-5 2 GROUND SUPPLY

GH-007-4

Abstract: 3362 resistor
Contextual Info: subject to change without notice September 15, 2003 3361 AND 3362 Data Sheet 27621.50* PRELIMINARY INFORMATION 2-WIRE, CHOPPER-STABILIZED, HALL-EFFECT SWITCHES Suffix Code 'LH' Pinning (SOT23W) 3 X NC NO (INTERNAL) CONNECTION Dwg. PH-003-5 2 GROUND SUPPLY

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC2815D/L EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. M ILLIM ETERS FEATURES • Low Collector Saturation Voltage : VCE sat =0.5V(Max. ) (IC=1A) • High Speed Switching Time : tstg=1.0/jS(Typ.)

BFQ10

Abstract: 718s
Contextual Info: 41 PH IL IP S I N T E R N A T I O N A L E D El 711005 b DD2 b 2 1 S S Ö P H I N '' BFQ10 to 16 T-27-27 DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, w ith electrically insulated gates and a common substrate connected to the envelope; intended

BFP650

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability

transitor RF 98

Abstract: BFP620 applications note germanium transistor ac 128 BFP620
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

BFP650

Abstract: BGA420 T-25
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology

Contextual Info: 2SC2995 F M /A M SILICON NPN EPITAXIAL TYPE TRANSISTOR U nit in mm RF, M IX , OSC, IF H IG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . • • High stability Oscillation Voltage On FM Local Oscillator. Recommend FM /A M RF, MIX, OSC and IF. M A X IM U M R ATIN G S Ta = 25°C

R4S BFP640

Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

2SA733 transistor equivalent

Abstract: PT115 transistor ph 45 transistor ph 30
Contextual Info: @SPT SIGNAL PROCESSING TECHNOLOGIES sprits VOLTAGE REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • Low Noise and Dropout Voltage Pass Transistor Terminals Available Very Low Standby Current ON, No Load

BFP620

Abstract: BGA420 T-25 KF 25 transistor AF 2596
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

BFP640E6327

Abstract: BFP640 noise figure bfp640e R4S BFP640
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

TIP32 TI

Contextual Info: TIP32; A TIP32B; C J^ P H I L IP S INTERNATIONAL SbE D • 711DÛBb □GMBHTD T2T « P H I N T - 33-11 SILICON EPITAXIAL BASE POWER TRANSISTORS PNP transistors in a plastic T 0-22 0 envelope. They are intended for use in a wide range of power amplifiers and for switching applications. NPN complements are TIP31 series.

Contextual Info: MITSUMI Lithium-Ion Battery Charge Control 1 cell MM1333 Lithium-Ion Battery Charge Control (1 cell) Monolithic IC MM1333 Outline This IC was developed for lithium-ion battery charge control. It controls charging with an external PNP power transistor or p-MOSFET. It is used only for 1-cell batteries and provides a high-precision charge voltage.

marking re

Abstract: BFP640 BGA420 T-25
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

Contextual Info: SEMICONDUCTOR TECHNICAL DATA K TB988 TRIPLE DIFFUSED PNP TRANSISTOR G E N E R A L P U R P O S E A P P LIC A T IO N . A p FEA TU RES R S • Low Collector Saturation Voltage J „ ¡_ L l : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. " P • Collector Power Dissipation

BFU309

Contextual Info: titiS3 T31 □□E3 b f l4 H 7 P hilips Sem iconductors APX Prelim inary specification N-channel silicon field-effect transistors , BFU308/309/310 N Af1 FP PHTI TPS/DTSCRETE L71 FEATURES PIN CONFIGURATION • Low noise • Interchangeability of drain and source connections

Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KTA1385D/L EPITAXIAL PLANAR PNP TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : Pc=1.3W Ta=25°C • Complementary to KTC5103D/L MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL

S 170 TRANSISTOR

Contextual Info: MIE D I 711QfiBb 002b7bl T B P H I N PH6659 PH6660 PH6661 PHILIPS INTERNATIONAL T -3 S -2 S N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistors, in TO-92 variant envelopes and designed for application as low power, high-frequency inverters and line drivers.

A733

Abstract: 2SA733 transistor equivalent A 1244 a733 transistor
Contextual Info: @ S P SPT1IS T SIGNAL PROCESSING TECHNOLOGIES VOLTAGE REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • Low Noise and Dropout Voltage Pass Transistor Terminals Available Very Low Standby Current ON, No Load)

Contextual Info: it N AFTER PHILIPS/DISCRETE 2SE I> bb53T31 001A7S1 3 • BUS23 SERIES T - 2 3 -'IS' SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.