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    PF014 Search Results

    PF014 Datasheets (19)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PF0140
    Hitachi Semiconductor Power Transistors Data Book Scan PDF 234.89KB 2
    PF0140
    Hitachi Semiconductor 12V 3A 20mW MOSFET power amplifier module for GSM handy phone Scan PDF 251.8KB 7
    PF0140
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 54.09KB 1
    PF0141
    Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Scan PDF 32.48KB 1
    PF0141
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 54.09KB 1
    PF01410
    Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Original PDF 24.58KB 4
    PF01410A
    Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Original PDF 24.59KB 4
    PF01410A
    Renesas Technology MOS FET Power Amplifier Module for GSM Handy Phone Original PDF 27.33KB 4
    PF01411
    Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF 25.2KB 4
    PF01411A
    Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF 25.2KB 4
    PF01411B
    Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF 25.8KB 4
    PF01412
    Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF 25.2KB 4
    PF01412A
    Hitachi Semiconductor MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF 25.21KB 4
    PF01412A
    Renesas Technology MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF 28.11KB 4
    PF01419B
    Renesas Technology MOS FET Power Amplifier Module for E-GSM Handy Phone Original PDF 30.11KB 4
    PF0143
    Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Scan PDF 34.31KB 1
    PF0143
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 54.09KB 1
    PF0146
    Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Original PDF 92.47KB 13
    PF0147
    Hitachi Semiconductor MOS FET Power Amplifier Module for GSM Handy Phone Original PDF 89.37KB 12
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    PF014 Price and Stock

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    Infineon Technologies AG IPF014N08NF2SATMA1

    TRENCH 40<-<100V PG-TO263-7
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    DigiKey () IPF014N08NF2SATMA1 Cut Tape 1,611 1
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    IPF014N08NF2SATMA1 Digi-Reel 1,611 1
    • 1 $4.67
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    IPF014N08NF2SATMA1 Reel 800 800
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    Avnet Americas IPF014N08NF2SATMA1 Reel 18 Weeks 800
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    Mouser Electronics IPF014N08NF2SATMA1 1,232
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    Newark IPF014N08NF2SATMA1 Cut Tape 256 1
    • 1 $6.17
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    TME IPF014N08NF2SATMA1 800 800
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    Chip One Stop IPF014N08NF2SATMA1 Cut Tape 786 0 Weeks, 1 Days 1
    • 1 $4.57
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    EBV Elektronik IPF014N08NF2SATMA1 19 Weeks 800
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    Advanced Thermal Solutions Inc ATS025025006-PF014

    PINFIN HEATSINK 25X25X6.4MM
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    DigiKey ATS025025006-PF014 Bulk 63 1
    • 1 $3.04
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    Avnet Americas ATS025025006-PF014 Bulk 8 Weeks 100
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    Mouser Electronics ATS025025006-PF014
    • 1 $2.97
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    • 100 $2.38
    • 1000 $2.09
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    Newark ATS025025006-PF014 Bulk 100
    • 1 $3.00
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    Onlinecomponents.com ATS025025006-PF014
    • 1 -
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    • 1000 $1.89
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    Richardson RFPD ATS025025006-PF014 100
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    Sager ATS025025006-PF014 100
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    TE Connectivity ZPF000000000014608

    Rectangular MIL Spec Connectors DCS 00 E 8-7 SN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ZPF000000000014608
    • 1 -
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    TE Connectivity ZPF000000000014215

    Rectangular MIL Spec Connectors DBASC 76-70-7
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ZPF000000000014215
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    • 100 $152.03
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    TE Connectivity ZPF000000000014201

    Rectangular MIL Spec Connectors DBASC 76-61 A134
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ZPF000000000014201
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    PF014 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Hitachi DSA0099

    Abstract: pf01411b
    Contextual Info: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B Z 3rd Edition November 1, 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input


    Original
    PF01411B ADE-208-434B D-85622 Hitachi DSA0099 pf01411b PDF

    Contextual Info: PF01419B MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-686 Z Ist Edition Jan. 1, 1999 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • High gain 3stage amplifier : 0 dBm input • Lead less thin & Small package : 2 mm Max, 0.2cc


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    PF01419B ADE-208-686 RF-K01 PDF

    PF01412A

    Abstract: Hitachi DSA00303
    Contextual Info: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B Z 3rd Edition February 1997 Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input


    Original
    PF01412A ADE-208-477B PF01412A Hitachi DSA00303 PDF

    PF0143

    Abstract: pf014 vapc Hitachi Scans-001
    Contextual Info: PF0143- Product Preview MOS FET Power Amplifier Module for GSM Handy Phone For GSM CLASS 4 8 9 0 -9 1 5 MHz OUTLINE DRAWING • FEATURES • High % typ. • High Speed Switching. 0.9 ps typ.


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    PF0143- 20sec. PF0143 pf014 vapc Hitachi Scans-001 PDF

    PF0131

    Abstract: PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PF0040
    Contextual Info: FET MODULE •High frequency amplifier Package Type No. cods RF-B2 PF0Q3Q PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 RF-B3 PF0040 PF0042 RF-E PFÓ02S PF0026 PF0027 PFQ04S PF0045A PF0047A PF0049A PFÖ065 PF0065A PF0O67A PF0144 PF0145 PF0146 PF0150 PF0231


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    PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 PF0040 PF0042 PF0026 PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PDF

    PF0144

    Abstract: Power Amplifier Module for GSM
    Contextual Info: PF0144-MOS FET Power Amplifier Module for GSM Handy Phone Application For GSM class4 890 to 915 MHz Pin Arrangement •RF-E Features • Small package 1 cc, 3 g • High efficiency 45% Typ • High speed switching 0.9 |is Typ JxT ^ 5 1


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    PF0144-----------------------MOS BL01RN1-A62-001 PF0144 PF0144 Power Amplifier Module for GSM PDF

    Contextual Info: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-433C Z 4th. Edition February 1997 Application • For E-GSM class4 880 to 915MHz • For 4.8V nominal battery use Features • • • • High gain 3 stage amplifier : OdBm input


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    PF01411A ADE-208-433C 915MHz 20sec. PDF

    Contextual Info: PF0143- Product Preview MOS FET Power Amplifier Module for GSM Handy Phone For GSM CLASS 4 8 9 0 -9 1 5 MHz OUTLINE DRAWING • FEATURES • High Efficiency. 40% typ. • High Speed Switching. 0.9


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    PF0143-------------------------- PDF

    Contextual Info: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-433C Z 4th. Edition February 1997 Application • For E-GSM class4 880 to 9 15MHz • For 4.8 V nominal battery use Features • • • • High gain 3stage amplifier : OdBm input


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    PF01411A 15MHz ADE-208-433C D-85622 PDF

    PF0144

    Abstract: 1ss106 application note 1SS106
    Contextual Info: PF0144 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI Application Product preview Rev. 0 Sep. 1993 Pin Arrangement For G S M class4 890 to 915 M H z Features • Sm all p ackage 1 cc, 3 g • H igh efficiency 45% Typ • H igh speed sw itching 0.9 ps T^p


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    PF0144 PF0144 1ss106 application note 1SS106 PDF

    PF0146

    Contextual Info: HITACHI PF0146 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI Application For G SM class4 890 to 915 M H z Features • Sm all package: 1 cc, 3g • H igh efficiency: 50% Typ • H igh speed sw itching: 0.9 isec Pin Arrangement • R F -E 1 : Pin


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    PF0146 ADE-208-285C PF0146 PDF

    PF0146

    Abstract: Power Amplifier Module for GSM
    Contextual Info: PF0146-MOS FET Power Amplifier Module for GSM Handy Phone Application Pin Arrangement For GSM class4 890 to 915 MHz Features • Small package: lcc, 3g • High efficiency: 50%typ • High speed switching: 0.9 us Typ Internal Diagram C1 =0.01


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    PF0146----------------------MOS BL01RN1-A62-001 PF0146 PF0146 Power Amplifier Module for GSM PDF

    almit

    Abstract: GSM RF module Power Amplifier Module for GSM PF0140 3lu10 VA-PC 10
    Contextual Info: H ITACH I PF0140 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-462 Z 1st. Edition July 1996 Application For GSM class4 890 to 915 MHz Features • • • • Low power control current: 1.5 mA Typ High speed switching: 1.2 (Is Typ Wide power control range: 80 dB Typ


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    PF0140 ADE-208-462 PF0140_ BL01RN1-A62-001 915MH almit GSM RF module Power Amplifier Module for GSM PF0140 3lu10 VA-PC 10 PDF

    PF01410A

    Abstract: Hitachi DSA00303
    Contextual Info: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B Z Product Preview 3rd. Edition November 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ


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    PF01410A ADE-208-424B PF01410A Hitachi DSA00303 PDF

    BLO1RN1-A62-001

    Abstract: PF01412A Hitachi DSA00231 BLO1RN1A
    Contextual Info: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477C Z 4th Edition Jan. 2001 Application • For GSM class4 890 MHz to 915 MHz • For 5.5 V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input


    Original
    PF01412A ADE-208-477C BLO1RN1-A62-001 PF01412A Hitachi DSA00231 BLO1RN1A PDF

    PF01411B

    Abstract: pf014 MOS FET Power Amplifier Module for E-GSM DSA003712
    Contextual Info: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B Z 3rd Edition Nov. 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc


    Original
    PF01411B ADE-208-434B PF01411B pf014 MOS FET Power Amplifier Module for E-GSM DSA003712 PDF

    Contextual Info: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone HITACHI ADE-208-434B Z 3rd Edition November 1, 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • High gain 3stage amplifier : 0 dBm input •


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    PF01411B ADE-208-434B PDF

    PF01410A

    Abstract: Hitachi DSA0099 T3845
    Contextual Info: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B Z Product Preview, 3rd Edition November 1, 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ


    Original
    PF01410A ADE-208-424B D-85622 PF01410A Hitachi DSA0099 T3845 PDF

    PF01419B

    Abstract: Hitachi DSA0099
    Contextual Info: PF01419B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-686 Z 1st Edition Jan. 1, 1999 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc


    Original
    PF01419B ADE-208-686 10onents PF01419B Hitachi DSA0099 PDF

    PF01411A

    Abstract: BLO1RN1-A62 Hitachi DSA00231
    Contextual Info: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433D Z 5th Edition Jan. 2001 Application • For E-GSM class4 880 MHz to 915 MHz • For 4.8 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc


    Original
    PF01411A ADE-208-433D PF01411A BLO1RN1-A62 Hitachi DSA00231 PDF

    Contextual Info: PF01410A MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-424B Z Product Preview, 3rd Edition November 1, 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ


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    PF01410A ADE-208-424B PDF

    Hitachi DSA0099

    Abstract: PF01411A
    Contextual Info: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433C Z 4th. Edition February 1997 Application • For E-GSM class4 880 to 915MHz • For 4.8V nominal battery use Features • • • • High gain 3stage amplifier : 0dBm input Lead less thin & Small package : 2mm Max, 0.2cc


    Original
    PF01411A ADE-208-433C 915MHz D-85622 Hitachi DSA0099 PF01411A PDF

    Hitachi DSA0099

    Abstract: PF01412A ADE-208-477B
    Contextual Info: PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B Z 3rd Edition February 1, 1997 Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input


    Original
    PF01412A ADE-208-477B D-85622 Hitachi DSA0099 PF01412A ADE-208-477B PDF

    almit

    Abstract: PF0140
    Contextual Info: PF0140 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI Application Rev. 0 Sep. 1993 Pin Arrangement For GSM class4 890 to 915 MHz Features • • • • Low power control current: 1.5 mA Typ High speed switching: 1.2 j s TVp Wide power control range: 80 dB Typ


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    PF0140 PF0140 almit PDF