PEPI VA Search Results

pepi c

Abstract: MRF426
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF426 The RF Line 25 W PEPI - 3 0 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . .designed for high gain driver and o u tp u t linear am plifier stages in 1.5 to 3 0 M H z H F /S S B equipm ent.

pepi c

Abstract: DM100 pepi pepi N HV100 HV300 ISO14000 DM-300 pepi b PEPI N-1
Contextual Info: 2.0 µm 5V/100V/300V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 2 Micron 5V control logic 100V & 300 V N & P channels transistors Low On-Resistance Epi wafers Thin gate oxide State of the art double metal technology [Ti/TiN/Al/TiN

Contextual Info: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro­

0.18 um CMOS parameters

Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
Contextual Info: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors

130001 power transistor

Abstract: transistor 130001 K1746 pepi c MRF426A MRF426 VK20Q PEPI -CH 2204B 725M
Contextual Info: lt.3t.7HS4 007&clû3 1 89D 7 8 9 8 3 6 3 6 7 2 5 4 MOTOROLA SC <X STR S/R F D 3 7 - A * MOTOROLA SEMICONDUCTOR MRF426 MRF426A TECHNICAL DATA T h e R F L in e 25 W P E P )- 3 0 M H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed for high gain driver and output linear am plifier stages

IDLN100D10

Abstract: ISO14000 100D10 pepi c ISO-14000 VTN100D10 zarlink PACKING 50x-2 Zarlink CROSS analog devices 0.8 -2.0um CMOS
Contextual Info: 2.0 µm 5V/40V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 5V control logic 40V transistors Epi wafers Thick gate oxide State of the art double metal technology [Ti/TiN/Al/TiN sandwich] Single or double poly Hi-res poly option [10kΩ/ ]

pepi c

Abstract: PEPI -CH pepi b
Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA A dvance Inform ation AM R900-60A The RF Line Linear P o w e r A m p lifie r 30 W — 800-960 MHz LINEAR POW ER AMPLIFIER . . . specifically d e sig n e d for cellular radio cell en h ancer applications. T h is solid state,

IBM Microelectronics

Abstract: PEPI
Contextual Info: September 2001 IBM Blue Logic CMOS 6RF Technology 0.25 µm CMOS technology for wireless applications Highlights • IBM proven CMOS technology with radio frequency RF , analog and mixed-signal enhancements, optimal for wireless applications • Low-conductivity substrate improves noise isolation

Contextual Info: SK10GD12T4ET 3' F HI J:E -%2&'' ,.4& */'& 'B& /K/&1 Absolute Maximum Ratings Symbol Conditions IGBT C:DL 3M F HI J: 6: 3M F OQI J: 6:RS .B'( OHPP C OQ ; 3' F QP J: OI ; H5 ; V HP C 3M F OIP J: OP [' 3' F HI J: OI ; 3' F QP J: OH ; H5 ; 6:RSF T U 6:%,+ C: F WPP CX C7D Y OI CX

TD 6905 S

Abstract: ci 7430 TD 6905
Contextual Info: LDVER ROW 1000PF, 2 K V ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATID P L -P 4 -P 2 i C J1-J2) (P 3 - P 7 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE (P 6 -P 3 ) (PE-PI) 3.0 LEAKAGE INDUCTANCE P 6 -P 3 <V1TH J 6 AND J 3 SHDRT) P2-P1 (WITH JE AND J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P 6 ,P 7 ,P 3 ) TD (J 6 ,J 3 >

MRW53605

Abstract: pepi c MRW53505
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R W 53505 M R W 53605 The RF Line Microwave Linear Power Transistors 6 TO 7 dB 1-3 GHz 4 WATTS MICROWAVE LINEAR POWER TRANSISTORS . . . designed p rim a rily fo r large-signal o u tp u t and d riv e r a m p lifie r stages in th e 1 to 3

5HP ibm

Abstract: 5HP ibm SiGe HBT sige hbt germanium transistors NPN IBM Microelectronics Tech MOS Technology Spiral Inductor technology SiGe POWER TRANSISTOR IBM SiGe
Contextual Info: IBM Microelectronics Blue Logic BiCMOS 5HP Technology SiGe BiCMOS process for high performance Highlights IBM Blue Logic BiCMOS 5HP is a unique and versatile process integrating a highperformance silicon germanium SiGe heterojunction bipolar transistor (HBT)

MC 2882

Abstract: 2SC2862 MC 342 transistor 210B MC 2871
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

MRF429MP

Abstract: MRF429-MP MRF429 MRF-429
Contextual Info: MOTOROLA SEM IC O N D U C T O R MRF429 MRF429MP TECHNICAL DATA The RF Line 150 W LINEAR 30 MHz RF POWER TRANSISTORS N P N SILIC O N NPN SILICON RF POWER TRANSISTORS . . d e s ig n e d p r im a rily fo r h ig h -v o lt a g e a p p lic a t io n s a s a h ig h p o w e r lin e a r a m p lifie r fro m 2.0 to 3 0 M H z . Id e a l fo r m a r in e a n d

MRF406

Abstract: MRF406 MOTOROLA 20WPEP
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 20 W PEP - 3 0 M H z RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . . designed p r im a r ily fo r a p p lic a tio n as a pow er lin e a r a m p lifie r fro m 2 .0 to 30 M Hz. • S p e cifie d 12.5 V o lt, 3 0 M H z C h ara cteristics O u tp u t Power = 20 W ÌPEP)

MRF477

Abstract: MRF477 equivalent mrf477 transistor 1N4719
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e 4 0 W PEP - 3 0 MHz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r a p p lica tio n as a h ig h -p o w e r linear a m p lifie r fro m 1.5 to 30 MHz, in sin g le sideband m o bile, m arine

c237p

Abstract: GPe600 equivalent of SL 100 NPN Transistor 2wl1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 600 W ATTS LINEAR 30 M Hz RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r h ig h -vo lta g e a p p lica tio n s as a h ig h -p o w e r lin e a r a m p lifie r

3B2S

Abstract: MRF428
Contextual Info: M O T OR O L A SC XSTRS/R 4bE D F L,3b72S4 OOmbSD T MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF428 The RF Line 150 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N R F POWER TRANSISTOR . . . designed prim arily fo r high-voltage applications as a high-power

harris 6616

Contextual Info: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2

harris 6616

Contextual Info: b3E D MSS1Ö7E 0 0 0 0 * 1 0 5 ROMs Honeywell 1ST * H 0 N 3 HONEYÜI ELL/ S S E C 2K x 8 RADIATION-HARDENED ROM HC6616 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial1.2 im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x106 rad(Si02

AAF40

Abstract: atechnology
Contextual Info: HONE Y KE LL/ S H o n e y w 1SE 0 S E C I MSSlä?a 00QGM37 □ | HC6616 e l l Preliminary Military Products 2K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION Fabricated with RICMOS Epitaxial 1.2 pm Process Typical 45 ns Access Time Total Dose Hardness through

883ct

Contextual Info: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through

honeywell mram

Contextual Info: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out

Contextual Info: Honeywell HC6856 Military Products Preliminary 256K-BIT RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Bulk 0.8 im Process • Total Dose Hardness through 1x106 rad(Si02 • Optional Architecture - 32K x 8 - 256Kx 1