PD54 Search Results

SMD Transistor z6

Abstract: Z9 TRANSISTOR SMD transistor 6 pin SMD Z2 smd z5 transistor transistor SMD Z2 480M PD54008 PD54008S XPD54008 XPD54008S
Contextual Info: PD54008 - PD54008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE

PD54003L

Abstract: DB-54003L-235
Contextual Info: DB-54003L-235 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Power gain: 13 ± 0.5dB ■

W316

Abstract: Diode W316
Contextual Info: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1

smd c8f

Abstract: A1 AMP RF SOT89 smd code c9f SMD CODE vapc C2f SOT-89 murata filter 104 "RF Power Amplifier" Coilcraft GRM1885C1H2R2CZ01 GRM1885C1H3R9CZ01
Contextual Info: STEVAL-TDR001V1 2 stage RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Current < 1.6 A ■ Input power < 10 dBm

PD54008L

Abstract: Z9 TRANSISTOR SMD J-STD-020B trimmer cap resistor smd code mil GP 525 smd
Contextual Info: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • BROADBAND PERFORMANCES POUT = 8 W WITH 15 dB GAIN @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE

Contextual Info: STEVAL-TDR015V1 Demonstration board using the PD54008L-E for 2-way UHF radio Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 7.2 V ■ Output power: 8 W ■ Power gain: 12.0 ± 1.0 dB ■ Efficiency: 56 % - 68 % ■

Contextual Info: STEVAL-TDR003V1 2-stage RF power amp: PD84001 + PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Current < 1.5 A ■ Input power < 10 dBm

Contextual Info: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • BROADBAND PERFORMANCES POUT = 8 W WITH 15 dB GAIN @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE

PD54

Abstract: 83981
Contextual Info: VISHAY PD54, 1.9 mm, Gull Wing CA Vishay Semiconductors PD54, 1.9 mm, Gull Wing (CA) Package Dimensions in mm 16160 Document Number 83981 Rev. 1.1, 03-Jun-04 www.vishay.com 1 PD54, 1.9 mm, Gull Wing (CA) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement

DB-54003L-175

Abstract: DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
Contextual Info: DB-54003L-175 RF power amplifier using 1x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.5 V ■ Output power: > 5 W ■ Efficiency: 64% - 73% ■ Load mismatch: 20:1

DB-54008L-830

Abstract: 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54008L GRM426X7R104K50 PD54008
Contextual Info: DB-54008L-830 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 800 - 830MHz ■ Supply voltage: 7.2V ■ Output power: 7W ■ Power gain: 7.9 ± 0.3dB ■ Efficiency: 56% - 59%

PD54003L

Contextual Info: AB-54008L-175 2 stages RF power amp: PD84001-E + PD54008L-E + LPF N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Current < 1.5A ■ Input power < 10dBm

STMICROELECTRONICS MSL

Abstract: pd54008l
Contextual Info: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W WITH 19 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

PD54

Contextual Info: VISHAY PD54, 1.9 mm, Rev. Gull Wing CA Vishay Semiconductors PD54, 1.9 mm, Rev. Gull Wing (CA) Package Dimensions in mm 16159 Document Number 83979 Rev. 1.1, 03-Jun-04 www.vishay.com 1 PD54, 1.9 mm, Rev. Gull Wing (CA) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement

DB-55008L-880

Abstract: PD54003L
Contextual Info: DB-55008L-880 schematic 1+ MSub R3 D1 C12 B2 C13 2- + C14 B1 Vcc FR4 H=60 mil R2 C10 C11 L1 R1 C5 C6 TL4 C2 RFin TL1 C1 C3 TL2 TL3 C4 LDMOS PD54003L C7 TL5 C8 TL6 C9 TL7 RFout

PD54008L

Abstract: DB-54008L-830
Contextual Info: DB-54008L-830 schematic 1+ 2- MSub B2 R3 D1 C3 C4 + B1 R2 MSUB FR4 H=60 mil C5 Vcc C1 C2 C12 R1 L1 C9 L3 TL5 C8 RFin TL1 C6 TL2 L2 C10 C11 TL3 TL4 LDMOS PD54008L C13 TL6 C7 C14 TL7 RFout

DB-54003L-175

Abstract: PD54003L
Contextual Info: DB-54003L-175 schematic 1+ 2- R2 B2 MSub C3 C4 + B1 FR4 H=60 mil C5 Vcc C1 C2 D1 R1 L2 L1 C9 TL4 C8 RFin TL1 C6 TL2 L3 TL3 LDMOS PD54003L C10 TL5 L4 C11 TL6 C7 TL7 RFout

NEOHM CRG 0603 thick film resistor

Abstract: PD84001 C2f SOT-89 C5F sot smd c2f AB-54008L-175 GRM1885C1H3R3CZ01 PD54008L-E PD84001-E
Contextual Info: AB-54008L-175 2 stages RF power amp: PD84001-E + PD54008L-E + LPF N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Current < 1.5A ■ Input power < 10dBm

BZX284C5V1

Abstract: DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
Contextual Info: DB-54003L-175A RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175 MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%

NEOHM CRG 0603 thick film resistor

Abstract: GRM1885C1H3R3CZ01 a05t C2f SOT-89 smd c2f PD54008L-E PD84001 STEVAL-TDR00 C6f TRANSISTOR smd transistor code 621
Contextual Info: STEVAL-TDR003V1 2-stage RF power amp: PD84001 + PD54008L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Current < 1.5 A ■ Input power < 10 dBm

Diode W316

Abstract: 102J DB-54003L-512 EXCELDRC35C GRM42-6 PD54003L TL11 W-309 W309 FR460
Contextual Info: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1

JESD97

Abstract: J-STD-020B PD54003L-E STMICROELECTRONICS MSL PACKAGES st 54003 TRANSISTOR AO SMD MARKING
Contextual Info: PD54003L-E RF Power Transistors The LdmoST Plastic FAMILY Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 3W WITH 20 dB GAIN @ 500MHz ■ NEW RF PLASTIC PACKAGE ■ EDS PROTECTION ■ SUPPLIED IN TAPE & REEL OF 3K UNITS

panasonic inductor date code

Abstract: PD54003L C17AH DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 panasonic capacitor date codes panasonic inductor date code NH
Contextual Info: DB-54003L-175A RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 155 - 175 MHz SUPPLY VOLTAGE

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002