PC133-333 144 Search Results

W9V332647HA-333

Abstract: W9V332647HA 32X64 079R 32MX64 PC133-333 tt12ns
Contextual Info: REVISION DATE REV DESCRPTION ZONE I. DESCRIPTION: APPVD NR Changed part number 1/29/01 5/11/01 III. TIMING MODULE LEVEL : Ÿ W9V332647HA-333 is a 32MX64 industry standard 144-pin PC133 SDRAM SODIMM Ÿ Manufactured with 8 32MX8 400-mil TSOPII-54 PC133-333 Synchronous DRAM devices

MO-161

Abstract: PC100-222 PC133-222 PC133-333 TSOP54
Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP • PC100-222, PC133-333 and PC133-222

PC133-333

Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank, 64MByte SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP 2 • PC100-222, PC133-333 and PC133-222

Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank, 64MByte SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP 2 • PC100-222, PC133-333 and PC133-222

PC133-222-520

Abstract: PC133-333 PC133-333-520 PC100-222-620 MO-161 PC100-222 PC133-222 TSOP54
Contextual Info: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank, 64MByte SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP 2 • PC100-222, PC133-333 and PC133-222

079R

Abstract: PC-100 PC133-333 ZD064M26H
Contextual Info: REVISIONS REV DATE ZONE I. DESCRIPTION: Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ APPVD III. TIMING TYPE W9D308647PA-333 is a 8Mx64 industry standard 168-pin PC133-333 SDRAM DIMM Manufactured with 4 8Mx16 400-mil TSOPII-54 133MHz Synchronous DRAM devices of 12-row, 11-column, 4-bank addressing.

w9v308647pa-333

Abstract: 079R wintec 8MX16
Contextual Info: REVISIONS REV DATE DESCRIPTION ZONE III. TIMING MODULE LEVEL : I. DESCRIPTION: Ÿ APPVD NR 6/1/00 TYPE W9V308647PA-333 is a 8MX64 industry standard 144-pin SDRAM SODIMM for PC133 CL=3 CL=2 Clock Cycle Time: (min) 7.5ns 10ns Clock Fre quency: (max) 133MHz

079R

Abstract: 16MX64 16MX8 16X64 W9V316647 W9V316647LA-333
Contextual Info: REVISION DATE REV DESCRPTION ZONE 2/8/00 APPVD NR III. TIMING: I. DESCRIPTION: Ÿ W9V316647LA-333 is a 16MX64 industry standard 144-pin PC133 SDRAM SODIMM Ÿ Manufactured with 8 16MX8 400-mil TSOPII-54 Synchronous DRAM devices TYPE CL=3 Clock Cycle Time: min

ELPIDA

Abstract: EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA
Contextual Info: SELECTION GUIDE DRAM Selection Guide Document No. E0226E80 Ver.8.0 Date Published June 2002 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2001-2002 DRAM Selection Guide CONTENTS 1. SDRAM . 4

q1257

Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
Contextual Info: 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 1 Product Information 2003 / 2004 DRAM SPECTRUM www.infineon.com Never stop thinking. 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 2 Introduction September 2003. This edition of the DRAM Spectrum has been developed

512m pc133 SDRAM DIMM

Abstract: TSOP 66 Package TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 P-TSOPI-48 infineon twinflash
Contextual Info: Product Information 2004 MEMORY SPECTRUM w w w. i n f i n e o n . c o m / m e m o r y w w w. i n f i n e o n . c o m / m e m o r y / f l a s h Never stop thinking. Introduction A P R I L 2 0 0 4 . This edition of Memory Spectrum has been developed to enable you to easily view the entire range of Infineon’s memory products.

viking pc100

Abstract: tsop 338 dtx 360
Contextual Info: PC100/PC133 ECC REGISTERED DIMM VR8ARxx7238xTx MODULE CONFIGURATIONS VMS Part Number Capacity Module Configuration Device Configuration Device Package Module Ranks 128MB 16Mx72 16M x 8 9 TSOP 1 VR8AR167238CTC VR8AR167238CTD Performance CAS Latency PC100

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

PC100

Abstract: pc133 SDRAM DIMM package 128MB
Contextual Info: SDRAM Module Code Information Last Updated : August 2009 MXXXXXXXXXXX - XXXXX 1 2 3 5 4 6 7 1. Memory Module M 2. Module Configuration 3 : 4/8 Byte DIMM (100, 168, 200, 232, 278pin) 4 : 8 Byte SODIMM (144pin) 3~4. Data bits 23 : x144/ECC PLL+Register DIMM

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

K5W1G

Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION

32MX64

Abstract: pc133 256 MB SDRAM SODIMM package SO-DIMM 144-pin
Contextual Info: 3.3V SDRAM Modules HYS64V32220GCDL • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 non-parity module organisation • suitable for use in PC100 and PC133 applications • Performance:

PC100-222

Abstract: PC133-333 TSOP54 HYS64V32220GD-7 HYS64V32220GD-8-C2 HYS64V32220GDL-8
Contextual Info: 3.3V SDRAM Modules HYS64V32220GD L 256MB PC100/PC133 144 pin SO-DIMM SDRAM Modules Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 (256 MByte) non-parity module organisation

Contextual Info: 3.3V SDRAM Modules HYS64V32220GD L 256MB PC100 144 pin SO-DIMM SDRAM Modules Preliminary Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 non-parity module organisation •

PD23C64020

Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Contextual Info: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed

HYS64V16220GDL

Abstract: HYS64V16220GDL-7 HYS64V16220GDL-8
Contextual Info: 3.3V SDRAM Modules HYS64V16220GDL 144 pin SO-DIMM SDRAM Modules PC100 / PC133 128 MB density Target Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • two bank 16M x 64 non-parity module organisation

A80L

Abstract: PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
Contextual Info: CD-ROM用ICメモリ CD-ROM X13769XJ2V0CD00 04−1 IC メモリ ダイナミックRAM • シンクロナスDRAM：SDR（シングル・データ・レート），256Mビット（x４ビット構成） 容量 構成 品 名 （ビット） （ワード

HYS64V64220GBDL-7-D

Abstract: HYS64V64220GBDL-8-D
Contextual Info: 144 pin SO-DIMM SDRAM Modules HYS64V64220GBDL-7/7.5/8-D 512 MB PC100 / PC133 • u144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 64M x 64 non-parity module organisation • suitable for use in PC100 and PC133 applications

SO-DIMM 100-pin

Abstract: JESD65-A dimm 240 pin 100-pin dimm ELPIDA PC2700 PC25300 1gb pc133 SDRAM DIMM JESD65 Micron Designline Vol 8 sodimm ddr2 512mb 667mhz
Contextual Info: #78 DDR2: The Next Generation Main Memory By Jimmy Ma Introduction Today’s memory architecture shows significant improvements when compared to the days of Fast Page Mode FPM and Extended Data Out (EDO). The industry has shifted gear from an asynchronous