PARTMARKING 5 C Search Results

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT589 ISSUE 5 - JANUARY 1997_ _ FEATURES * Low equivalent on-resistance; RCE sat 250m£2 at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE- 589 FMMT489 ABSOLUTE MAXIMUM RATINGS.

transistor 6CZ

Abstract: BC807 BC817 BC81716 BC81725 BC81740 6Bz transistor
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 – MARCH 2001 PARTMARKING DETAILS BC81716 – 6AZ BC81725 – 6BZ BC81740 – 6CZ ✪ COMPLEMENTARY TYPE – BC807 BC817 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

zvp3306f

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996_ ZVN3306F _ FEATURES * R D S o n r 5 Q * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL • ZVP3306F G MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

BCW68GR

Abstract: BCW68HR BCW68GR-5T BCW66 BCW68 BCW68F BCW68FR BCW68G BCW68H
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

fzt855

Abstract: 100 Amp current 1000 volt diode FZT955 DSA003675
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -

ZVN4210

Abstract: resh S10A fet ZVN4210G DSA003737
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS on = 1.5Ω PARTMARKING DETAIL - ZVN4210 VGS= 10V 9V 8V 7V ID - Drain Current (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts)

VN10LFTA

Abstract: VN10L
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =5Ω D PARTMARKING DETAIL – S MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C

Contextual Info: BCV71 BCV72 S 0 T 2 3 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR PARTMARKING DETAILS: BVC71 - K7 BCV72 - K8 BCV71R - K6 BCV72R - K9 ABSOLUTE MAXIMUM RATINGS VALUE UNIT V CBO 80 V V CEO 60 V V EBO 5 V 200 mA PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage

J202 equivalent

Contextual Info: FMMJ201 to FM M J204 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ201 FM M J202 FM M J203 FM M J204 - P01 P02 PO3 P 04 ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5°C -40V Gate Drain or Gate-Source Voltage Notes Continous Forward Gate Current

Contextual Info: BAV74 Circuit For Measuring Switching Time lF=10mA 0.2|xF Trr1 Pulse is supplied by a generator with the following characteristics: Output is monitored on a sampling oscilloscope with the following characteristics: Output impedance = 50iJ Input impedance = 5012

FMMT4401

Abstract: FMMT4400 DSA003694
Contextual Info: FMMT4400 FMMT4401 SWITCHING CHARACTERISTICS at Tamb= 25°C PARAMETER SYMBOL Turn-On Time ton Turn-Off Time t off MIN. MAX. UNIT CONDITIONS 35 ns VCC=30V, VBE(off)=2V IC=150mA, IB1=15mA (See Fig.1) 255 ns VCC=30V, IC=150mA IB1=IB2=15mA (See Fig. 2) SOT23 NPN SILICON PLANAR

FMMT551

Abstract: FMMT451 DSA003698
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT551 ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS 100 - Normalised Gain % - (Volts) -0.8 -0.6 -0.4 -0.2 -0.01 -0.1 -1 -10 COMPLEMENTARY TYPE – PARTMARKING DETAIL –

FMMT3905

Abstract: FMMT3906 FMMT3903 FMMT3904 DSA003692
Contextual Info: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS FMMT3905 FMMT3906 ISSUE 4 – MARCH 2000 SWITCHING CHARACTERISTICS at Tamb=25 °C unless otherwise stated PARAMETER FMMT3905 FMMT3906 SYMBOL FMMT3905 MIN MAX FMMT3906 MIN VCC=-3V, VBE(off)=-0.5V IC=-10mA, IB1=-1mA

FMMD6100

Abstract: FMMD7000 PARTMARKING at 5b DSA003690
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FMMD6100 FMMD6100 ISSUE 2 - OCTOBER 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15

FMMT2907

Abstract: FMMT2907A FZT2907 FZT2907A DSA003709
Contextual Info: FZT2907 FZT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL FMMT2907 FMMT2907A MIN. MIN. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 30 pF VBE=-2V, IC=0

BCW65 ec

Abstract: BCW66H BCW65AR
Contextual Info: Not Recommended for New Design Please Use BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA

FZT755

Abstract: FZT655 DSA003715
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT755 TYPICAL CHARACTERISTICS td tr ts µs VCE=10V ts COMPLEMENTARY TYPE – PARTMARKING DETAIL – td 0.6 Switching time 0.4 IC/IB =10 V 0.4 0.2 0.01 0.1 ABSOLUTE MAXIMUM RATINGS. 0.2 tr 0.1 0.01 0.1 1 I+ - Collector Current Amps

FMMT497

Abstract: FMMT597 DSA003699
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT597 FMMT597 ISSUE 3 - OCTOBER 1995 TYPICAL CHARACTERISTICS 0.6 0.6 +25°C 0.5 0.4 I+/I*=10 I+/I*=50 0.4 0.3 0.2 0.2 0.1 0.1 1mA 10mA 100mA 1A -55° C +25° C +100° C 1mA 240 160 +25° C 10mA 100mA 1A IC-Collector Current

pnp transistor 1000v

Abstract: FMMT555 FMMT455 PNP POWER TRANSISTOR SOT23 ZTX554 ZTX555 DSA003698 transistor VCBO 1000V IC 100mA
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - Volts -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr -0.01 IC - Collector Current (Amps)

FZT2222A

Abstract: 1N916 FZT2907A DSA003708
Contextual Info: FZT2222A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL VALUE MIN. Transition Frequency 300 fT UNIT CONDITIONS. MHz IC=20mA, VCE=20V f=100MHz MAX. Output Capacitance Cobo 8 pF VCB=10V, IE=0, f=140KHz Input Capacitance

FZT653

Abstract: FZT753 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE – FZT753 PARTMARKING DETAIL – FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS.

BA 516 diode

Contextual Info: BAV70 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR COMMON CATHODE BA V 7 0 - ISSUE 2 - JANUARY 1995 PIN CONFIGURATION 1 PARTMARKING DETAIL BAV70- A4 Ai i SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C ontinuous Reverse Voltage

2801A1

Abstract: 100mA-1A FMMT493 FMMT593 DSA003696
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT493 ISSUE 3 - NOVEMBER 1995 TYPICAL CHARACTERISTICS 0. 4 0. 4 +25 ° C t a I+/I*=10 I+/I*=50 0. 2 t) -55 ° C +25 ° C +100 ° C SYMBOL VALUE UNIT VCBO 120 V Collector-Emitter Voltage VCEO 100 V V 0. 1

c 10 ph diode

Abstract: FMMD2837 ay 5 3510
Contextual Info: FMMD2837 DIIV Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 0.043 C - 1.10 - D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 K 0.01 L 2.10 N NOM 0.075 0.10 0.0004 0.004 2.50 0.0825 0.0985 NOM 0.95 NOM 0.37