PARTMARKING 5 C Search Results

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT589 ISSUE 5 - JANUARY 1997_ _ FEATURES * Low equivalent on-resistance; RCE sat 250m£2 at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE- 589 FMMT489 ABSOLUTE MAXIMUM RATINGS.

ZVN3306F

Abstract: ZVP3306* datasheet GS 393 ZVP3306F DSA003736 3tf5
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

transistor 6CZ

Abstract: BC807 BC817 BC81716 BC81725 BC81740 6Bz transistor
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 – MARCH 2001 PARTMARKING DETAILS BC81716 – 6AZ BC81725 – 6BZ BC81740 – 6CZ ✪ COMPLEMENTARY TYPE – BC807 BC817 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

zvp3306f

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996_ ZVN3306F _ FEATURES * R D S o n r 5 Q * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL • ZVP3306F G MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

BCW68GR

Abstract: BCW68HR BCW68GR-5T BCW66 BCW68 BCW68F BCW68FR BCW68G BCW68H
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

fzt855

Abstract: 100 Amp current 1000 volt diode FZT955 DSA003675
Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT855 ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak C * * Very low saturation voltage Excellent hFE specified up to 10 Amps E PARTMARKING DETAIL COMPLEMENTARY TYPE -

FMMD914

Contextual Info: PAGE NUMBER SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE FMMD914 ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION PARTMARKING DETAIL - 5D AL 3 5 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT W orking Peak Reverse Voltage V rw m 75 V Average Rectified Forward Current at

ZVN4210

Abstract: resh S10A fet ZVN4210G DSA003737
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS on = 1.5Ω PARTMARKING DETAIL - ZVN4210 VGS= 10V 9V 8V 7V ID - Drain Current (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts)

VN10LFTA

Abstract: VN10L
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =5Ω D PARTMARKING DETAIL – S MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C

Contextual Info: BCV71 BCV72 S 0 T 2 3 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR PARTMARKING DETAILS: BVC71 - K7 BCV72 - K8 BCV71R - K6 BCV72R - K9 ABSOLUTE MAXIMUM RATINGS VALUE UNIT V CBO 80 V V CEO 60 V V EBO 5 V 200 mA PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage

J202 equivalent

Contextual Info: FMMJ201 to FM M J204 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ201 FM M J202 FM M J203 FM M J204 - P01 P02 PO3 P 04 ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5°C -40V Gate Drain or Gate-Source Voltage Notes Continous Forward Gate Current

Contextual Info: BAV74 Circuit For Measuring Switching Time lF=10mA 0.2|xF Trr1 Pulse is supplied by a generator with the following characteristics: Output is monitored on a sampling oscilloscope with the following characteristics: Output impedance = 50iJ Input impedance = 5012

FMMT4403

Abstract: FMMT4402 DSA003694
Contextual Info: FMMT4402 FMMT4403 SWITCHING CHARACTERISTICS at Tamb= 25°C PARAMETER SYMBOL Turn-On Time ton Turn-Off Time t off MIN. MAX. UNIT CONDITIONS 35 ns VCC=-30V, VBE(off)=-2V IC=-150mA, IB1=-15mA (See Fig.1) 255 ns VCC=-30V, IC=-150mA IB1=IB2=-15mA (See Fig. 2)

FMMT4401

Abstract: FMMT4400 DSA003694
Contextual Info: FMMT4400 FMMT4401 SWITCHING CHARACTERISTICS at Tamb= 25°C PARAMETER SYMBOL Turn-On Time ton Turn-Off Time t off MIN. MAX. UNIT CONDITIONS 35 ns VCC=30V, VBE(off)=2V IC=150mA, IB1=15mA (See Fig.1) 255 ns VCC=30V, IC=150mA IB1=IB2=15mA (See Fig. 2) SOT23 NPN SILICON PLANAR

FMMT551

Abstract: FMMT451 DSA003698
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT551 ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS 100 - Normalised Gain % - (Volts) -0.8 -0.6 -0.4 -0.2 -0.01 -0.1 -1 -10 COMPLEMENTARY TYPE – PARTMARKING DETAIL –

FMMZ5244

Abstract: zr 74 VP-1-1V FMMZ5248 8Y SOT23 fmmz5242
Contextual Info: FMMZ5232 to FMMZ5257 ELECTRICAL CHARACTERISTICS at Tamb= 25°C . Type No Max. Zener Impedance Nominal Zener Voltage v z@lzr Test Current 'zr V mA 5.6 20 FMMZ5233 6 20 7 1600 FMMZ5234 6.2 20 7 1000 FMMZ5235 6.8 20 5 750 FMMZ5232 Zzr@ 'zr ZZT@ 'zK =0.25171^

5P sot23

Abstract: FMMT2907 FMMT2907AR 2F PNP SOT23 FMMT2907A FMMT2907R FMMT2222 FMMT2222A DSA003691
Contextual Info: FMMT2907 FMMT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER FMMT2907 FMMT2907A SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR SYMBOL FMMT2907 FMMT2907A TYP. TYP. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF

complementary npn-pnp

Abstract: complementary npn-pnp power transistors zdt6757 FZT657 T6757 NPN/PNP transistor sot223 FZT757 200V 100MA NPN DSA003725
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6757 ZDT6757 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS at Tamb = 25°C . NPN PNP SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T6757 ABSOLUTE MAXIMUM RATINGS. PARAMETER

FZT757

Abstract: FZT657 DSA003716
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT757 TYPICAL CHARACTERISTICS td tr ts tf µs µs 4 1.6 IC /IB=10 IB1=IB2=IC /10 200 3 V 150 100 1.2 0.01 0.1 0.6 1 ABSOLUTE MAXIMUM RATINGS. tr tf ts td tr 0.01 IC - Collector Current Amps 0.1 1 IC - Collector Current (Amps)

Contextual Info: FMMT2369 FMMT2369A t0 N CIRCUIT 270Q 3V i 3K3Í2 < Pulse width t1 =300ns Duty cycle = 2% t0 FF CIRCUIT Duty cycle = 2% STORAGE TEST CIRCUIT Duty cycle = 2% * Total shunt capacitance of test jig and connectors 3-69 Cg<4pF4 FMMT2369 | FMMT2369A SOT23 NPN SILICON PLANAR

FMMT3905

Abstract: FMMT3906 FMMT3903 FMMT3904 DSA003692
Contextual Info: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS FMMT3905 FMMT3906 ISSUE 4 – MARCH 2000 SWITCHING CHARACTERISTICS at Tamb=25 °C unless otherwise stated PARAMETER FMMT3905 FMMT3906 SYMBOL FMMT3905 MIN MAX FMMT3906 MIN VCC=-3V, VBE(off)=-0.5V IC=-10mA, IB1=-1mA

pnp transistor 1000v

Abstract: FMMT455 FMMT555 transistor VCBO 1000V IC 100mA DSA003671
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - Volts -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr -0.01 IC - Collector Current (Amps)

FZT558

Abstract: pnp high emitter base voltage 15 volt PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT ZTX558 DSA003710
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 ISSUE 2 – DECEMBER 1995 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 2 Watt TYPICAL CHARACTERISTICS 1.6 IC/IB =50 1.4 1.2 1.0 0.6 0.6 0.2 1 20 PARTMARKING DETAIL - 0.4 0.001

FMMD6100

Abstract: FMMD7000 PARTMARKING at 5b DSA003690
Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FMMD6100 FMMD6100 ISSUE 2 - OCTOBER 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15