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    MJ-112

    Contextual Info: FMMJ111 to FMMJ113 S0T23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ111 - C11 FM M J112 - C12 FM M J113 - C13 APPLICATION AREAS: * ANALOG SWITCHES * CHOPPERS * COMMUNICATORS ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5 °C -3 5 V


    OCR Scan     		s0t23fmmj111fmmj113300/is+1mj-112 PDF

    MJ-112

    Abstract: FMMJ112 FMMJ111
    Contextual Info: S0T23 N-CHANNEL SILICON JUN CTIO N FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ 1 1 1 - C11 FMMJ1 12 - C12 FMMJ 11 3 - C13 APPLICATION AREAS: * ANALOG SWITCHES * CHOPPERS * COMMUNICATORS ABSOLUTE M AXIM UM RATINGS at Tamb = 25°C -3 5 V Gate Drain or G ate-S ource V oltage Notes


    OCR Scan     		s0t23mj-112fmmj112fmmj111 PDF

    bss170

    Contextual Info: SOT23 'If SMALL SIGNAL MOSFETS SOTFETs Pinout : 1-Drain, 2-Source, 3-Gate Type b mA BV qss V !DM A PD mW V GE;<th) M in/M ax at lD V mA RDS(on) a at Max mA to V GS V 10 N-CHANNEl ZVN3320F 200 60 1.0 330 1.0/3.0 1.0 25.0 100 BSS123 100 170 0.68 360 0.8/2.8


    OCR Scan     		zvn3320fbss123bss123azvn3310f+7bst82zvn4106fzvn3306ffmmj4391fmmj4392fmmj4393bss170 PDF

    bss170

    Abstract: BSS170F MJ174
    Contextual Info: SOT23 SM ALL SIGNAL M O SFETS SO TFETs '• Pinout : 1-Drain, 2-Source, 3-Gate Type BV q s s V !d mA !dm A PD mW R DS(on) VGS><th) Min/Max at lD mA V £2 at Max •d mA V GS V 10 N-CHANNEL; ZVN3320F 200 60 1.0 330 1.0/3.0 1.0 25.0 100 BSS123 100 170 0.68


    OCR Scan     		zvn3320fbss123bss123azvn3310f+8bst82zvn4106fzvn3306f2n7002vn10lfbss170fbss170mj174 PDF