ZVN3306F Search Results

ZVN3306F

Abstract: ZVP3306* datasheet GS 393 ZVP3306F DSA003736 3tf5
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

w2s sot23

Abstract: ML SOT23 FET SOT23 60V ZVN3306F ZVP3306F
Contextual Info: SOT23 P-CHANNEL ENHANCEMENT ZVP3306F MODE VERTICAL DMOS FET ISSUE 3- JANUARY I L 1996 FEATURES . 60 Volt Vr>s . Ro;, ,=14 2 s D PARTMA13KING DETAIL COMPLEMENTARY - ML G TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM _ RATINGS. PARAMETER [Drain — Sc, urce (;ontl~luuus

zvp3306f

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996_ ZVN3306F _ FEATURES * R D S o n r 5 Q * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL • ZVP3306F G MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ZVP3306F ISSUE 3 -JAN UARY 1996 FEATURES * 60 V o lt Vos * Rosionr1^ s PARTM ARKING DETAIL - M L g CO M PLEM ENTAR Y TYPE - ZVN3306F SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e

Contextual Info: ZVN3306F Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)150m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC)

ZVN3306F

Abstract: TR47 TR-47 NS80-MA
Contextual Info: ZVN3306F SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET P A R T M A R K IN G DETAIL - ZVN3306F - M C ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Drain-Source Voltage Continuous Drain Current @ Tam b=25‘C Pulsed Drain Current Gate-Source Voltage M a x Power Dissipation @ Tamb=25‘C

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET GS -1.0 -10 -8 -6 -0.6 -4 -0.4 ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =14Ω D S PARTMARKING DETAIL – ML COMPLEMENTARY TYPE – ZVN3306F -0.8 D= ZVP3306F G SOT23 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: PLESSEY SEMICOND/DISCRETE cFjjj 7220533 □□Db732 2 03 T N-channel enhancement mode vertical DMOS FET - ZVN3306F ABSO LUTE M A X IM U M RATINGS Sym bol Parameter U nit 60 V 'd 0 .1 5 A 3 A ±20 V CO o > D rain-source vo lta ge S O T-23 C o n tin uo u s drain c u rre n t at T A = 2 5 °C

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996 ZVP3306F _ _ FEATURES * 60 V olt V DS * R DS on = 1 4 f l PARTMARKING DETAIL - ML COMPLEMENTARY TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage

VN10LFTA

Abstract: VN10L
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =5Ω D PARTMARKING DETAIL – S MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C

12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: Capacitor X7R 100n 50V 1206 zener smd diode 16v 1w uCapacitor X7R 100n 50V 1206u class D audio power amplifier phillips 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM NO USED IC 22u smd capacitor 1u 63V BTL audio 50W pot 100K smd
Contextual Info: ZXCD50STEVAL 50W CLASS D AUDIO AMPLIFIER EVALUATION BOARD DESCRIPTION FEATURES • Stereo The ZXCD50STEVAL evaluation board is based on the ZXCD1000 Class D audio amplifier solution from Zetex. This board allows the user to evaluate the high fidelity audio performance offered by the Zetex solution, with

electric capacitor 330uF 25V

Abstract: S14814DY wurth 744 liteon ltst-c170gkt C1005X7R1H102 C0402C102K5RAC C0402C105K9PAC FDMS8690 C1608X7R1E104K C3225X7R1E106M
Contextual Info: 19-0688; Rev 1; 1/10 MAX8792 Evaluation Kit The MAX8792 evaluation kit EV kit demonstrates the standard 10A application circuit of the MAX8792. This DC-DC converter steps down high-voltage batteries to generate low-voltage core or chipset/RAM bias supplies in notebook computers.

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 3 -JANUARY 1996_ FEATURES * 60 Vo It V DS * ^DS ON = P A R T M A R K IN G D ET A IL - M V ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L D rain-Source Voltage v DS C ontinuous Drain Current at Tam^ 25 ° C

2n3906 equivalent

Abstract: ITE 8500 Ax 1023a 12V lead acid battery
Contextual Info: 19-1153; Rev 0; 12/96 A M X I A I Chemi st ry-I independent B a t t e r y Chargers _F e a t u r e s The M AX1647/M AX1648 provide the po w e r control neces­ sary to cha rge batteries of any chem istry. In the MAX1647, all charging functions are controlled via the Intel System

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2n3906 equivalent

Abstract: 1n4150 equivalent 4803 so-8 transistor 2N3906 smd 2A SOT23 2N7002 equivalent mosfet 4805 MAX1647 MAX1647EAP MAX1648 MAX1648ESE
Contextual Info: 19-1158; Rev 1; 12/02 Chemistry-Independent Battery Chargers The MAX1647 is available in a 20-pin SSOP with a 2mm profile height. The MAX1648 is available in a 16-pin SO package. _Applications Notebook Computers Personal Digital Assistants

ferranti

Abstract: ZVN2210L ZVN3306B ZVN3310B ZVH2224B ZVN2220L ZVN2224L ZVN2535B ZVN3206L ZVN3210L
Contextual Info: - 246 - f §y s tt € A X t Vos or i Vdg * V Vg s (V) Ig s s Id Pi> * /CH * /CH (A) m M $ ÎS (Ta=25^) Vg s (V) Vd s (V) ( M A) (V) (V) («A) Ciss g fs Coss Crss & & m n V g s -0 (max) *typ V g s (V) (0 ) D (Ta=25tC) lo(on) FDs(on) Vd s = Vg s max min (nA)

2n3906 equivalent

Abstract: 1n4150 equivalent lead acid 12V battery chargers mosfet 4805 2N7002 equivalent MAX1647 transistor 2N3906 smd 2A SOT23 MAX1647EAP MAX1648 MAX1648ESE
Contextual Info: 19-1158; Rev 0; 12/96 Chemistry-Independent Battery Chargers The MAX1647/MAX1648 provide the power control necessary to charge batteries of any chemistry. In the MAX1647, all charging functions are controlled via the Intel System Management Bus SMBus interface. The SMBus 2-wire

ZVN3306

Abstract: ZETB ZVN3306A ZVN3306B ZVN3306E ZVN3306F F150 SOT23 5 ZVN33 a/ZVN3306
Contextual Info: bOE P ^70570 • N-Channel enhancement mode vertical DMOS FET 0 0 0 7 Ô5 1 017 I I Z E T B Z ET EX SEMICONDUCTORS ZVN3306 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance