PA28F400BVT Search Results

intel e28f

Abstract: 28f400 BYTE PROGRAM
Contextual Info: [p[M3 [G>U T [P^lWOIl in te l 4-MBIT 256K x 16, 512K x 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B Intel Sm artVoltage Technology — 5V or 12V Pro g ram /E rase — 3.3V or 5V Read O peration — 60% Faster Typical Program m ing at

Contextual Info: inU PRELIMINARY 4-MBIT 256K X 16, 512K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004BE-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation — Increased Programming Throughput

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

1A14A

Abstract: T28F200 28F400-T
Contextual Info: in te l PRELIMINARY 4-MBIT 256K X 16, 512K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28 F 4 0 0 B V -T /B , 28 F 4 0 0 C V -T /B , 2 8 F 0 0 4 B V -T /B 2 8 F 4 0 0 C E -T /B , 2 8 F 0 0 4 B E -T /B Intel SmartVoltage Technology — 5V or 12V Program/Erase

intel pa28f400

Abstract: AN907 M28F220 programming codes M28F210 M28F211 M28F410 M28F411 M28F420 M28W231
Contextual Info: AN907 APPLICATION NOTE Compatibility between St Boot Block and Intel SmartVoltage Flash Memories by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash

a56 transistor

Abstract: DD28F032SA E28F008SA n28f512 Needhams Electronics that your PROM programming hardware and software Needhams Electronics
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Needhams Electronics 4630 Beloit Drive #20 Sacramento, CA 95838 REF: Intel and Needhams Electronics Test Services Agreement dated 10/30/95 Dear PROM Programmer Vendor:

DD28F032SA

Abstract: E28F001BX-B E28F002BV-T E28F004BV-T E28F008BV-T PA28F400BV-T PA28F800BV-T Julie Semiconductor Products texas microsystems
Contextual Info: For Immediate Release BP Microsystems Optimizes Intel’s Flash Memory Line Houston, Texas  May 2, 1997  BP Microsystems, Inc. announces today its optimized programming times of Intel’s Flash memory line. Intel evaluated the optimized algorithms on

intel pa28f400

Abstract: intel 28F400 28F400
Contextual Info: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 4-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004BE-T/B n n n n n n n Intel SmartVoltage Technology  5 V or 12 V Program/Erase  2.7 V, 3.3 V or 5 V Read Operation

intel pa28f400

Abstract: intel 28F400 28F400 29053 intel flash A0513 28f400 interface intel 28f800 A76T intel AP-569
Contextual Info: M f ä ilL D G M Ä Ö S Y in le l 4-MBIT (256K x 16, 512K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B, 28F400CE-T/B, 28F 004B E -T /B Intel Sm artVoltage Technology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read Operation

Contextual Info: i n y 4-MBIT 256K x 16, 512K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B, 28F400CE-T/B, 28F004BE-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation — Increased Programming Throughput

Contextual Info: [p[F 3 E y T IPG ?] in te l 4-MBIT 256K x 16, 5 1 2 K x 8 ) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B Intel SmartVoltage Technology — 5V or 12V Program /Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at

TSOP56

Abstract: 302A F28F020 TSOP-56 DD28F032SA E28F008SA DIP48 psop44 intel E28F008BE
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 October 7, 1997 Intel Corporation 1900 Prairie City Rd. Folsom, CA 95630 Dear Programmer Vendor: I am pleased to inform Intel Corp. that your device programming hardware and software has passed programmer

28F004

Abstract: 29759* intel
Contextual Info: 28F400BV/CV/CE 28F004BV/BE SPECIFICATION UPDATE Release Date: December 1996 Order Number: 297595-012 The 28F400BV/CV/CE and 28F004BV/BE may contain design defects or errors known as errata. Characterized errata that may cause the 28F400BV/CV/CE and 28F004BV/BEs’ behavior to

intel pa28f400

Abstract: 28F400
Contextual Info: E PRELIMINARY 4-MBIT 256K X 16, 512K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004BE-T/B n n n n n n n n Intel SmartVoltage Technology  5V or 12V Program/Erase  2.7V, 3.3V or 5V Read Operation

7641 prom

Abstract: intel 28F400 t443 TOP MARK 28F004 pa28f400bvt 512k x 8 chip block diagram INTEL flash part MARKING
Contextual Info: 28F400BV/CV/CE 28F004BV/BE SPECIFICATION UPDATE Release Date: February 1997 Order Number: 297595-013 The 28F400BV/CV/CE and 28F004BV/BE may contain design defects or errors known as errata. Characterized errata that may cause the 28F400BV/CV/CE and 28F004BV/BEs’ behavior to

39BASE-0101

Abstract: 39BASE-0201 l 0701 testing of diode DD28F032SA E28F008SA 39BASE-9901
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Data I/O Corp. 10525 Willows Rd. NE Redmond, WA 98073 REF: Intel and Data I/O Corp. Test Services Agreement dated 08/15/95 Dear PROM Programmer Vendor: I am pleased to inform Data I/O Corp. that your PROM programming hardware and software has passed

intel pa28f400

Abstract: 28f400 interface 8F200 28f400 BYTE PROGRAM PA28F400BVB60 intel 28F200 intel 28f800 intel 28F400 T120 Switch 28F400
Contextual Info: E PRELIMINARY 4-MBIT 256K X 16, 512K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004BE-T/B Intel SmartVoltage Technology  5V or 12V Program/Erase  2.7V, 3.3V or 5V Read Operation  Increased Programming

E28F016SV-70

Abstract: E28F016SV70 E28F016SA70 44PS A6 t E28F016SA-70 N28F010-120 P629 transistor A6 datasheet transistor a6 s
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 SMS Mikrocomputer Systeme GmbH Im Grund 15 D-88239 Wangen, Germany REF: Intel and SMS Mikrocomputer Systeme GmbH Test Services Agreement dated 05/08/96 Dear PROM Programmer Vendor:

intel pa28f400

Abstract: AN907 AN907 applications E28F002BV-T M28F210 M28F211 M28F221 M28W231 28F400BV-B pa28f400
Contextual Info: AN907 APPLICATION NOTE COMPATIBILITY BETWEEN ST BOOT BLOCK AND INTEL SMARTVOLTAGE FLASH MEMORIES by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash

report on PLCC

Abstract: TSOP 56 socket Intel 56 TSOP TSOP 44 socket TSOP 56 psop 44 TSOP 48 socket DD28F032SA E28F008SA Intel 48 TSOP
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Intel Corp. 1900 Prairie City Rd. Folsom, CA 95630 Dear PROM Programmer Vendor: I am pleased to inform Intel Corp. that your PROM programming hardware and software has passed PROM

AB28F

Abstract: 29759* intel t443 28F004
Contextual Info: 28F400BV/CV/CE 28F004BV/BE SPECIFICATION UPDATE Release Date: July 1996 Order Number: 297595-011 The 28F400BV/CV/CE and 28F004BV/BE may contain design defects or errors known as errata. Characterized errata that may cause the 28F400BV/CV/CE and 28F004BV/BEs’ behavior to

Contextual Info: irrigl PRELIMINARY 4-MBIT 256K X 16, 512K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004BE-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation — Increased Programming Throughput

Contextual Info: int ! PRELIMINARY 4-MBIT 256K X 16, 512K X 8 Smart Voltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004BE-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation — Increased Programming Throughput

TN80C196KC20

Abstract: TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224
Contextual Info: Product Change Notification Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of the change and the change will be implemented pursuant to the key milestones set forth in this attached PCN.