PA HF Search Results

SF1020

Abstract: NF3030A-TU HF3020C-NK NF202 HF3015A-TC NF3100A-TU RC5128 HF3030A-TC NF3150 NF2005A-PA
Contextual Info: EMI FILTERS NF2000A-PA series * High attenuation in low frequency range * Good pulse characteristics * Built in bleeder resistor Type Phase Rated voltage Rated current VAC (A) NF2005A-PA 5 NF201QA-PA 10 NF2015A-PA NF2020A-PA NF2030A-PA 1-phase 2-lines 250

2SD636 R

Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
Contextual Info: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b

marking PA

Abstract: KRA301E "marking PA"
Contextual Info: SEMICONDUCTOR KRA301E MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking PA No. 2000. 12. 27 Item Marking Description Device Mark PA KRA301E hFE Grade - - Revision No : 0 1/1

Contextual Info: * Clockworks PRELIMINARY SY89801A HP PA-8000 CLOCK SOURCE SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES 3.3V, - 1 .9V power suppies Differential LVPECL clock input Differential HSTL/LVPECL outputs Compatible with HP PA-8000 microprocessors Low-jitter source for all PA-8000 required timing

M44-1

Abstract: SY89801A SY89801AMC SY89801AMCA PA-8000 800106
Contextual Info: ClockWorks PRELIMINARY SY89801A HP PA-8000 CLOCK SOURCE FEATURES DESCRIPTION • ■ ■ ■ ■ 3.3V, –1.9V power suppies Differential LVPECL clock input Differential HSTL/LVPECL outputs Compatible with HP PA-8000 microprocessors Low-jitter source for all PA-8000 required timing

PH 41113

Abstract: MYS 99 725 ABB inverter motor fault code MYS 99 003
Contextual Info: ProMinent Product Catalog S e c t i o n Ta b R e f e r e n c e Table of Contents. II SECTION TABS PA G E 1 PA G E 2 7 PA G E 6 7  Solenoid & motor pump overview

2SB737

Abstract: 2SB694H 2SB709 2SB718 2SB747 2sb707 2SD601 2SD756 2SD756A 2SB698
Contextual Info: - 58 - n Ta=25*C,*EP(iTc=25t5 2SB694H B Ä L F PA/PStf VcBO VcEO (V) (V) Ice D C) (A) Pe Pe* (W) m ^ fó 4# te (Ta=25°C) (max) ( u Pí) VcB (V) (min) (max) Vc e (V) Ic /I e (A) -0.05 LF PA/LS PSW -0.5 -1.5 LF PA/LS PSW -0.5 -1.5 -0.5 2SB703A LF PA/LS PSW

hpm power supply

Contextual Info: TQM613030 Data Sheet Tritium II PA-Duplexer Module CDMA Cellular Band Features Functional Block Diagram • • • • • • • • Product Description The TQM613030 cellular band CDMA PA-Duplexer module integrates the duplexer, PA, coupler, Tx inter-stage filter, and built-in voltage regulator circuitry

KRA301

Contextual Info: SEMICONDUCTOR KRA301 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PA 1 2 Item Marking Description Device Mark PA KRA301 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

BPF24

Abstract: D4004 panasonic env tuner BPF22 limp panasonic TV tuner AN39 AN3961 AN3961NFBPA AN3963NFBPA
Contextual Info: Panasonic ICs fo r VCR A N 3961N FB PA , A N 3963N FB PA Audio Signal Processor ICs for Hi-Fi VCR • Overview The AN3961 NFBPA and the AN 3963N FB PA are audio signal processing ICs with necessary all functions, includ­ ed linear audio, for recording and playback of VHS-HiFi

KRA551U

Abstract: "marking PA"
Contextual Info: SEMICONDUCTOR KRA551U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking PA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PA KRA551U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

TB387

Abstract: blm31p500 BLM31P5005 DL4001 HFA3983 HFA3984 ISL3984
Contextual Info: Replacing the HFA3983 Power Amplifier PA with HFA3984 PA in the PRISM II-Based Radio TM Technical Brief ADV ANCE I NF O R MA T ION September 2000 TB387 Author: Milutin Culibrk Introduction HFA3983 (28 PIN EPTSSOP) PINOUT The ISL3984 is a 2.4GHz monolithic

marking pa

Abstract: "marking PA" marking pa US6 KRA751U PA US6
Contextual Info: SEMICONDUCTOR KRA751U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking PA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PA KRA751U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

marking PA

Abstract: KRA551E
Contextual Info: SEMICONDUCTOR KRA551E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking PA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PA KRA551E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRA101S

Contextual Info: SEMICONDUCTOR KRA101S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PA 1 2 Item Marking Description Device Mark PA KRA101S hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

CD9015A

Abstract: CD9015C CD9015D1 CD9015D2 CD9015D3 CD9015E CIL1115E CON369
Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25’C, Unless Otherwise Specified) Maximum Ratings Type No. Vcbo (V) Min ^CEO (V) Min (V) Min Pd (W) (A) @Tc=25“c hFE @ ^CES 'c 8 0 ^CB ^CE (pA) (V) (PA) © (V) Min Max Max Max 'c &

PA47D

Abstract: PA48D UPA47D transistor 16345 TT 6053
Contextual Info: B & D Enterprises nPA47D, 48D Main & Liberty St. Russell PA 16345 /¿PA47D,48D 1- 800 - 458 - 6053 fax 814 -757 5400 *> IJ 3 NPN Silicon Epitaxial Quad Transistor High Current High Speed Switching Industrial Use h ^PA 47D,48D (i, fl-JliEI/PACKAGE DIMENSIONS

GSM9004

Abstract: gsm module micro DCS1800 GSM900 RMPA1955-99
Contextual Info: RMPA1955-99 3V Dual-Band GSM Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module

LM103 zener

Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
Contextual Info: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-

2SC2222

Abstract: 2SC2093 2sc2103a 2SC2150 2SC2106 2SC2094 2SC2098 203d6 2SC2148 2sc2188
Contextual Info: - 116 - MXËfê su z rfi 3$ Ta=25tî, *EP(ÏTc=25^ m Vq e q VcEQ Ic(oc) Pc Pc* (V) (V) (A) (ïï) (W) 0. 5 10 (Ta=25tî) & (max) Vc e (V) 20 200 6 0.1 20 100 5 4 20 185 5 5 28 2SC2094 H # HF PA 40 3.5 30 2000 2SC2097 H * HF PA 50 15 150 5000 2SC2098 * 2

Contextual Info: Panasonic ICs fo r VCR AN3961NFBPA, AN3963NFBPA Audio Signal Processor ICs for Hi-Fi VCR • Overview The AN 3961N FB PA and the A N 3963N FB PA are audio signal processing ICs with necessary all functions, includ­ ed linear audio, for recording and playback of VHS-HiFi

capacitor 705k

Contextual Info: ANALOG DEVICES Picoampere Input Current Bipolar Op Amp FEATURES CO N N ECTIO N D IA G RA M DC PERFORMANCE 25 |xV max Offset Voltage AD705T 0.6 fiV/°C max Drift (AD705K/T) 100 pA max Input Bias Current (AD705K) 250 pA max l8 Over MIL Temperature Range (AD705T)

SMD IC MARKING GP

Abstract: PC2771T PC2709T marking c2h
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2771T MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER FOR 3 V DIGITAL CELLULAR TELEPHONE The µPC2771T is a silicon monolithic integrated circuit designed as the transmission PA’s driver for digital cellular telephones. This +11.5 dBm P1db driver can get back-off to PA input level.

BC307A

Abstract: BC32b BC259 BC259B BC307 BC307B BC307C BC308 BC308A BC308B
Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. BC25SC ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 30 25 5 Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) Fd (W) Tc=25° (A) 0.3 0.1 'cso ^CB 'c e s ^ce (PA) 0<V) (pA) Max 0 (V)