P4C11 Search Results

1S26

Abstract: P4C116 P4C116L AD5e
Contextual Info: PERFORMANCE SEMICONDUCTOR SDE V • 7 0 b 2 5 cl7 0001780 3äb * P S C P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12,15/20/25/35 ns (Commercial)

Contextual Info: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Produced with PACE II TechnologyTM

P4C116

Abstract: P4C116L
Contextual Info: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs

Contextual Info: P4C116 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS -FEATURES • Full CMOS, 6T Cell ■ Output Enable Control Function ■ High Speed Equal Access and Cycle Times -10/12/15/20/25/35 ns (Commercial) -15/20/25/35 ns (Military)

Contextual Info: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS j j - FEATURES • Full CMOS, 6T Cell ■ Single 5V+10% Power Supply ■ High Speed (Equal Access and Cycle Times)

Contextual Info: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Produced with PACE II TechnologyTM

DIODE SMD A6

Abstract: 24-Pin Plastic DIP 5962-84036 P4C116
Contextual Info: P4C116 P4C116 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Output Enable Control Function High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Single 5V±10% Power Supply Common Data I/O

5962-84036

Abstract: A77 smd DDD2554 P4C116 VHC 04 smd diode s4 2b
Contextual Info: P4C116 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS - X} FEATURES • Full CMOS, 6T Ceil ■ Output Enable Control Function ■ High Speed Equal Access and Cycle Times -10/12/15/20/25/35 ns (Commercial)

Contextual Info: PERFORMANCE SEMICO NDU CTOR 20E D 70^55^7 Q00Ü5S3 2 P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS A - :- FEATURES Full CMOS, 6T Cell • Single 5V±10% Power Supply High Speed (Equal Access and Cycle Times)

Contextual Info: P4C116/P4C116L ULTRA HIGH SPEED 2K X 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35 ns (Military) Low Power Operation Output Enable Control Function

Contextual Info: P4C116 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Output Enable Control Function High Speed Equal Access and Cycle Times -10/12/15/20/25/35 ns (Commercial) -15/20/25/35 ns (Military) Single 5V±10% Power Supply Common Data I/O Fully TTL Compatible Inputs and Outputs

25L40

Abstract: P4C116 P4C116L
Contextual Info: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Produced with PACE II TechnologyTM

2SC1525

Abstract: C1991 P4C116 P4C116L CAJT
Contextual Info: P4 ' <- re H i­ P4C116/P4C116L ULTRA HIGH SPEED 2K X 8 STATIC CMOS RAMS SCRAMS FEATURES * • Single 5V:t10% Power Supply Full CMOS, 6T Cfiil ■ Data Retention with 2.0V Supply, 10 pA Typical Current ■ High Speed (Equal Access and Cycle Times) -1 2 ,1 5 /2 0 /2 5 /3 5 ns (Com m ercial)

Contextual Info: P4C116/P4C1161ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell ■ Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12,15/20/25/35 ns (Commercial) - 20/25/35 ns (Military) ■ Data Retention with 2.0V Supply, 10 |iA Typical

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

QP7C128A

Abstract: QP6116A 8403609XA IDT6116LA90EB ns8002 8403601ja 84036143A IDT6116LA45L32B QP6116A-35DMB qml-38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA Change to vendor similar part number for vendor CAGE number 61772 for devices 08KX, 09KX, 10KX, 11KX, 12KX, 13KX, 14KX, 15KX, and 16KX. Remove vendor CAGE number 61772 from devices 08YX, 09YX, 10YX, 11YX, 12YX, 13YX, 15YX, and 16YX. Change to vendor

Contextual Info: STATIC CMOS RAMs, COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGE DESCRIPTION PART TAA ns PACKAGES/PINS SIZE NUMBER P J S PP 22 P93U422 35 24 256x4 1K P4C422 22 10/12/15/25/35 24 256x4 1K P4C147 18 10/12/15/20/25 4Kx1 w/Separate I/O 4K P4C148 18 10/12/15/20/25

P4C187

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)

Contextual Info: P3C1041 HIGH SPEED 256K X 16 4 MEG STATIC CMOS RAM FEATURES Fast Access Times - 10/12/15/20 ns Advanced CMOS Technology Low Power Operation Fast tOE Single 3.3V ± 0.3V Power Supply Automatic Power Down when deselected 2.0V Data Retention Packages – 44-Pin TSOP II

chn22

Abstract: CHN24 chn14 VMIVME-4125 CHN6 VMIVME-3419 strain gauge amplifier CHN10 chn7 VMIVME-4125A
Contextual Info: VMIVME-3419 32-Channel Signal Conditioning Board with Selectable Gain and Built-In-Test Product Manual 256 880-0444 w 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA (800) 322-3616 w Fax: (256) 882-0859 500-003419-000 Rev.D (256) 880-0444

L6116FMB90

Abstract: ns8002 qml-38535 CY6116A-55DMB 8403607ZA HM1-65162 84036103A IDT6116LA120EB IDT6116LA90EB 15KX
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA Change to vendor similar part number for vendor CAGE number 61772 for devices 08KX, 09KX, 10KX, 11KX, 12KX, 13KX, 14KX, 15KX, and 16KX. Remove vendor CAGE number 61772 from devices 08YX, 09YX, 10YX, 11YX, 12YX, 13YX, 15YX, and 16YX. Change to

nx-U8

Abstract: p5ne SAR15 PC3C1 ml8511 p4sd p4ne
Contextual Info: FEUL610Q380-01 ML610Q380/ML610Q383 ML610Q384/ML610Q385 User’s Manual Issue Date: Mar. 9, 2012 ML610Q380/ML610Q383/ML610Q384/ML610Q385 User’s manual NOTES No copying or reproduction of this document, in part or in whole, is permitted without the consent of LAPIS SEMICONDUCTOR

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K X 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)