290X490 Search Results

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)

22-PIN

Abstract: P4C187 P4C187L
Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)

24-Pin Plastic DIP

Abstract: smd code WZ P4C187 P4C187L
Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)

P4C187

Abstract: P4C187L
Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS FEA TU R ES • Full CMOS, 6T Cell Data Retention with 2.0V Supply ■ High Speed (Equal A cce ss and Cycle Times) -10/12/15/20/25 n s (Commercial) -15/20/25/35 n s (Military) Separate Data I/O

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS à FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -15/20/25/35 ns (Military) Separate Data I/O

MCM6287

Abstract: MCM6287P MCM6287P35 MCM6287-25
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MCM6287 64K x 1 Bit Static Random A ccess Memory The MCM6287 is a 65,536 bit static random access memory organized as 65,536 words of 1 bit, fabricated using Motorola's second-generation high-performance silicon-gate

P4C187

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply (P4C187L Military) ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -15/20/25/35 ns (Military) Separate Data I/O

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)

Contextual Info: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)

CE-v1H

Abstract: P4C187 P4C187L smd resistor code
Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS xi— - -FEATURES • Full CMOS, 6T Cell ■ Data Retention with 2.0V Supply P4C187L Military ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial)

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES • Full CMOS, 6T Cell ■ Data Retention with 2.0V Supply P4C187L Military ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)

FT6187

Contextual Info: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K X 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)

1S1211

Abstract: SDE Contactor P4C187 P4C187L
Contextual Info: PERFORMANCE SEMICONDUCTOR SOE D • 7 0 b 2 5T 7 G 0 0 1 Ô 4 5 453 H P S C P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Data Retention with 2.0V Supply (P4C187L Military) ■ High Speed (Equal Access and Cycle Times)

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)

Contextual Info: PERFORMANCE SEMICO NDU CTOR SOE D • 70^25^7 Q00QST5 5 P4G187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS T - % - X l - 0 5 :- FEATURES Full CM O S, 6T Cell ■ Data Retention w ith 2.0V Supply High Speed (Equal Access and Cycle Tim es)