350X550 Search Results

Contextual Info: P4C1299/P4C1299L ULTRA HIGH SPEED 64K X 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C1299L High Speed (Equal Access and Cycle Times) – 15/20/25/35 ns (Commercial/Industrial) – 15/20/25/35/45 ns (Military) Three-State Outputs

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)

P4C1281

Abstract: P4C1258
Contextual Info: P4C1281/P4C1282 ULTRA HIGH SPEED 64K X 4 cmos STATIC RAMS FEATURES Full CMOS, 6T Cell Separate Inputs and Outputs High Speed Equal Access and Cycle Times – 12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Industrial) – 20/25/35/45 ns (Military) Low Power Operation

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)

P4C1256L

Contextual Info: P4C1256L LOW POWER 32K X 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE and OE Inputs Common Data I/O

Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 nA Typical

LM35N

Contextual Info: PERFORMANCE SEM ICO NDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times

1549T

Abstract: EI96
Contextual Info: PERFORMANCE SE MI CO NDU CTOR EOE D • TObEST? O O O D m T P4C1282/P4C1282L, P4C1281 /P4C1281L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS 2 PIFSEUMO A -

22-PIN

Abstract: P4C187 P4C187L
Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)

1s34

Abstract: P4C198 P4C1981 P4C1981L P4C1982L
Contextual Info: PERFORMANCE SEMICONDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial)

P4C198

Abstract: P4C1981 P4C1981L P4C1982L
Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES • Full CMOS, 6T Cell 5V ±10% Power Supply ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)

Contextual Info: P4C1981/1981L, P4C1982/1982L REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM114 P4C1981 / P4C198L, P4C1982 / P4C1982L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)

P4C1981

Abstract: P4C198 P4C1981L P4C1982L
Contextual Info: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

P4C187

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)

Contextual Info: P4C1298/P4C1298L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM FEATURES Data Retention with 2.0V Supply Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 15/20/25/35/45 ns (Military) Three-State Outputs

Contextual Info: FT61981/FT61981 L FT61982/FT61982(L) ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current (FT61981L/1982L Military) Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

Contextual Info: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

Contextual Info: POWER CSMA_ CSTA 3 8 0 7 / 6 3 A. .1 00 A BLOCKS CSTA 3 8 0 V / 160 A . . .3 2 0 A CST2_ CST2-V_CSTP2 TYPE Includes : working voltage St n o m i n a l current CSMA 220V (380V)/ 63A CSMA 220V(380V)/ 80A

Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES • Full CMOS, 6T Cell 5V ±10% Power Supply ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)

Contextual Info: PERFORMANCE SEMICONDUCTOR D3E D | 7Db25T7 □□□•□353 3 IUM1IMÂIRY P4C198/P4C198L P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEBRUARY 1988 FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times

Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS Xr FEATURES • Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 |iA Typical

P4C1298

Abstract: P4C1298L
Contextual Info: P4C1298/P4C1298L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM FEATURES Data Retention with 2.0V Supply Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 15/20/25/35/45 ns (Military) Three-State Outputs

Contextual Info: FT61981/FT61981L FT61982/FT61982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current FT61981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)