P4C1982 Search Results

Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 nA Typical

LM35N

Contextual Info: PERFORMANCE SEM ICO NDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times

1s34

Abstract: P4C198 P4C1981 P4C1981L P4C1982L
Contextual Info: PERFORMANCE SEMICONDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial)

P4C198

Abstract: P4C1981 P4C1981L P4C1982L
Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES • Full CMOS, 6T Cell 5V ±10% Power Supply ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)

Contextual Info: P4C1981/1981L, P4C1982/1982L REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM114 P4C1981 / P4C198L, P4C1982 / P4C1982L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B

P4C1981

Abstract: P4C198 P4C1981L P4C1982L
Contextual Info: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

Contextual Info: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES • Full CMOS, 6T Cell 5V ±10% Power Supply ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)

Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS Xr FEATURES • Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 |iA Typical

Contextual Info: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 A Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

P4C198

Abstract: P4C1981L P4C1982L
Contextual Info: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS P4C1981/1981L, P4C1982/1982L FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial)

sem 2105

Contextual Info: PERFORMANCE SEMICONDUCTOR 20E J> • 70^55^7 OOOOt.51 2 ■ T -V 6 -3 M O P4C1982/P4C1982L, P4C1981 /P4C1981L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS A -

Contextual Info: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES • Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)

Contextual Info: STATIC CMOS RAMs, COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGE DESCRIPTION PART TAA ns PACKAGES/PINS SIZE NUMBER P J S PP 22 P93U422 35 24 256x4 1K P4C422 22 10/12/15/25/35 24 256x4 1K P4C147 18 10/12/15/20/25 4Kx1 w/Separate I/O 4K P4C148 18 10/12/15/20/25

Contextual Info: PERFORMANCE SEMICONDUCTOR D3E D | 7Db25T7 □□□•□353 3 IUM1IMÂIRY P4C198/P4C198L P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEBRUARY 1988 FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

Contextual Info: PERFORMANCE SEMICONDUCTOR 5 OE D • TObaST? OOQlSSt T O ÎM IF Û ^IM IÂ T F D !^ P3C31982/L SUPER FAST 16K X 4 STATIC CMOS RAM SCRAM FEATURES Three-State Output ■ Single 3.3V +0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation

Contextual Info: PERFORMANCE SEMICONDUCTOR 20E » Tobase? aoQissb t P3C31982/L SUPER FAST 16KX 4 STATIC CMOS RAM SCRAM FEATURES Single 3.3V +0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation Three-State Output Separate Inputs and Outputs - P3C31982/L Outputs In High ZDuring Write

Contextual Info: P E R F O R M A N C E -SEMICONDUCTOR 0 3 E D VGbSST? DDOQBtil E 1 7 " ^ ' ^ 3 ' / ^ IDJÜ1DIMÄIRY P 4 C 1 9 8 2 /P 4 C 1 9 8 2 L P 4 C 1 9 8 1 /P 4 C 1 98 11 U LTR A H IG H C M O S S T A T IC S P E E D 16K x 4 R A M S FEBRUARY 1988 jA . FEATURES Data Retention with 2.0V Supply, 10 jxA Typical

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

TSMC 0.18 um MOSfet

Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
Contextual Info: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A