P4C198L Search Results

Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell 5V ± 1 0 % Power Supply High Speed Equal Access and Cycle Times -1 0 /1 2 /1 5 /2 0 /2 5 ns (Commercial) -12/1 5 /2 0 /2 5 /3 5 ns (Industrial) -15 /2 0 /2 5 /3 5 /4 5 ns (Military)

P4C198

Abstract: P4C198A
Contextual Info: P4C198/198L, P4C198A/198AL P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial)

Contextual Info: P4C1981/1981L, P4C1982/1982L REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM114 P4C1981 / P4C198L, P4C1982 / P4C1982L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B

Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATU RES Data Retention, 10 |xA Typical Current from 2.0V P4C198L/198AL (Military) • Full CMOS, 6T Cell High Speed (Equal A ccess and Cycle Times) -12/15/20/25/35 ns (Commercial)

P4C198

Abstract: P4C198A
Contextual Info: PE R F O R M A N C E SEMICONDUCTOR SÜE D • TDbSS'i? Ü Ü D 1 Û S Ô AID « P S C P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS 7^ v 6 ^ 3 - t FEATURES I Data Retention, 10 pA Typical Current from 2.0V P4C198L/198AL (Military)

Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Output Enable & Chip Enable Control Functions – Single Chip Enable P4C198 – Dual Chip Enable P4C198A Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial)

P4C198

Abstract: P4C198A P4C198L
Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Output Enable & Chip Enable Control Functions – Single Chip Enable P4C198 – Dual Chip Enable P4C198A Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial)

Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Output Enable & Chip Enable Control Functions – Single Chip Enable P4C198 – Dual Chip Enable P4C198A Full CMOS, 6T Cell High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial)

Contextual Info: PERFORMANCE SEMICONDUCTOR SQE D • iütaST? aPÜQtll T T - f i-23 - P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS À FEATURES ■ Full CMOS, 6T Cell Data Retention, 10 nA Typical Current from 2.0V. ■ High Speed (Equal Access and Cycle Times)

Contextual Info: PERFORMANCE SEMICONDUCTOR D3E D | 7Db25T7 □□□•□353 3 IUM1IMÂIRY P4C198/P4C198L P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEBRUARY 1988 FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times

Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS j ì- FEATURES • Full CMOS, 6T Cell ■ 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times

P4C198

Abstract: P4C198A 3CE12
Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times -10 /1 2 /1 5 /2 0 /2 5 ns (Commercial) - 12/15/20/25/35 ns (Industrial) - 15/20/25/35/45 ns (Military)

Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Data Retention, 10 jxA Typical Current from 2.0V P4C198L/198AL (Military) • Full CMOS, 6T Cell ■ High Speed (Equal A ccess and Cycle Times) -12/15/20/25/35 ns (Commercial)

ci 555

Abstract: MCM6290-20 MCM6290-15 SR64E4 MB81C75-35 MCM6290-45 MCM6290A-25 MCM6290A-30 MCM6290C-10 MCM6290
Contextual Info: - 6 4 K X m £ ít £ CC A TAAC max ns) TCAC max (ns) TOE max (ns) 7 CMOS f ^ / S t a t i c RAM ïf tt (1 6 3 8 4 X 4 ) « TOH min (ns) TOD max (ns) TiP min (ns) TDS miri (ni:) TDH mm (ns) TWD min (ns) TWR max (ns) V D D or V C C (V> 2 4 P I N 6 4E4 A M

Contextual Info: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

Contextual Info: P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C1981L/1982L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial)

TSMC 0.18 um MOSfet

Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
Contextual Info: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A