P-N SILICON DIODE Search Results

2N697

Contextual Info: 2N697 Silicon N-P-N Planar Transistor. 1.61 Transistors Bipolar Silicon NPN Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N697 Online Store 2N697 Diodes Silicon N -P-N Planar Transistor. Transistors Enter code INTER3 at checkout.* Integrated Circuits

TRANSISTOR C 5387

Abstract: C 5387
Contextual Info: Ordering num ber:E N 5387 _ FX901 N o.5387 P N P Ep itaxial Plan ar Silicon Transistor N-Channel M O S Silicon F E T Silicon Schottky B a rrie r Diode DC/DC C onverter A pplications F e a tu re s •Composite type w ith a P N P transistor and a 2.5V drive N-channel M O SFE T w ith a built-in low

2N6079

Contextual Info: 2N6079 High-voltage high-power silicon N-P-N transistor. 8.14 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6079 Online Store 2N6079 Diodes High-voltage high-power silicon N-P-N transistor. Transistors Integrated Circuits Optoelectronics

Contextual Info: _ J v _ BDT61;61A BDT61B;61C SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60, 60A, 60B and 60C.

BDT60

Abstract: kia 494 BDT60B BDT61 BDT61A BDT61B BDT61C transistor 2TH transistor d 1991 ar
Contextual Info: BDT60;60A BDT60B;60C J ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA

T2D 22 diode

Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Contextual Info: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA

A1381 transistor

Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

MBD702

Abstract: MBD502
Contextual Info: MBD502 silicon MBD702 HIG H-VOLTAG E SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES SILICON HOT-CARRIER DIODE (SCHOTTKY BARRIER DIODE) 5 0 -7 0 V O L T S . . . d esig n ed p r im a rily fo r h ig h -e ffic ie n c y U H F an d V H F d e te c to r a p p lic a tio n s.

U08C

Abstract: G016 CASE318-07
Contextual Info: MOTOROLA SEMICONDUCTOR MMBV3700L MPN3700 TECHNICAL DATA SILICON PIN SWITCHING DIODES HIGH VOLTAGE SILICON PIN DIODES . . . d e s ig n e d p rim a rily fo r V H F b an d sw itch in g a p p licatio n s but also su ita b le fo r use in g e n e ra l-p u rp o s e sw itch in g and a tte n u a to r

2N5323

Contextual Info: 2N5323 General Purpose P-N-P Silicon Power Transistor. 4.00 Transisto. 1 of 1 Home Part Number: 2N5323 Online Store 2N5323 Diodes G eneral Purpo s e P- N-P Silic o n Po w er Trans is t o r. Transistors

TLP581

Abstract: TLP580 100KC E67349 VDE0730-2P
Contextual Info: TLP580, TLP58I G aAlAs I n frared Emi t t i n g Diode & N P N Silicon P hoto - T r a n s i s o t r The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a dual in-line package. TLP580 is no-base internal connection for highEMI environments,

Contextual Info: NEC SILICON SW ITCHING DIODES ELECTRON DEVICE 1 S2837,1 S2838 HIGH SPEED SW ITCHING SILICON EPITAXIAL DOUBLE DIODES . COMMON CATHODE M IN I MOLD FEATURES PACKAGE DIMENSIONS • L o w c a p a c ita n c e : Ct = 1.1 p F T Y P . in m illim e te rs o a * -n o

2N5782

Contextual Info: 2N5782 Silicon P-N-P epitaxial-base transistor. -65V 10W. 16.19 Transis. 1 of 2 Home Part Number: 2N5782 Online Store 2N5782 Diodes Silic o n P-N- P epit ax ial- bas e t rans is to r. -6 5 V 1 0 W.

2N3791

Contextual Info: 2N3791 Silicon P-N-P Epitaxial-base High Power Transistor. -60V - 150. 1 of 1 Home Part Number: 2N3791 Online Store 2N3791 Diodes Silic o n P- N-P Epit axial-bas e High Po w er Trans is t o r. - 6 0 V -

BDT61

Abstract: transistor BD 512 BDT60 BDT61B IEC134 1FC15
Contextual Info: BDT61;61A BDT61B;61C _ JV SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose am plifier applications. P-N-P complements are B D T 60, 60A , 60B and 60C. Q U IC K R E F E R E N C E D A T A

1SV80

Abstract: NEC DO-35 bectron
Contextual Info: NEC PIN DIODE ELECTRON DEVICE 1SV80 VHF/UHF RF ATTENUATIG AND SWITCHING SILICON PIN DIODE D ESCR IPTIO N A N D A P P LIC A T IO N S FE A TU R E S • Low cost. The 1SV80 silicon PIN diode, especially designed fo r V H F /U H F band sw itching, attenuating.

5BE1

Abstract: bdt61 Darlington NPN Silicon Diode
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.

40841

Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
Contextual Info: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

1377 transistor

Abstract: 2N5956 transistor 2N5956
Contextual Info: 2N5956 Silicon P-N-P medium-power transistor. -50V 40W. 13.77 Transi. 1 of 2 Home Part Number: 2N5956 Online Store 2N5956 Diodes Silic o n P-N- P m edium - po w er t ransis t o r. - 5 0 V 4 0 W. Transistors

2N5240

Abstract: Catalog Bipolar Transistor
Contextual Info: 2N5240 High-voltage Silicon N-P-N Transistor. 9.95 Transistors Bipolar . 1 of 2 Home Part Number: 2N5240 Online Store 2N5240 Diodes High- vo lt age Silic o n N- P- N Trans ist o r. Transistors Enter code INTER3 at

2n4037 transistor

Abstract: NPN Transistor 2n4037 2n4037
Contextual Info: 2N4037 Medium Power Silicon N-P-N Planar Transistor. 6.90 Transistor. 1 of 1 Home Part Number: 2N4037 Online Store 2N4037 Diodes M edium Po w er Silic o n N- P- N Planar Trans is t o r. Transistors

ic sj 2038

Abstract: sj 2038
Contextual Info: O rd e rin g n u m b e r :EN 3 1 2 9 2SB1323/2SD1997 No. 3129 P N P /N P N E pitaxial P lanar Silicon T ransistors Compact Motor Driver Applications F eatu res Contains input resistance(Ri , base-to-emitter resistance(RBE)Contains diode between collector and em itter.

1SS97

Abstract: NEC DO-35 NEC 1SS97
Contextual Info: NEC MIXER DIODE ELECTRON DEVICE 1S S 97 UHF MIXER SILICON EPITAXIAL SCHOTTKY BARRIER DIODE FE A T U R E S D E SC R IP T IO N A N D A P P LIC A T IO N S Th e 1 S S9 7 is silicon epitaxial schottky barrier diode, espe­ • Sm all size glass package. D O -35 T Y P E

Contextual Info: Ordering number: EN5052 FX802 N o.5052 TR : P N P E p itax ial P la n a r Silicon T ra n sisto r SBD : Schottky B a rrie r Diode Twin Type • C athode Common DC-DC Converter F e a tu re s • C om plex type of a low s a tu ra tio n voltage, high speed sw itching and larg e c u rre n t P N P tra n sisto r and