BDT61 Search Results

BDT61

Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERN A T I O N A L SbE D I 711002b 00M3250 A44 W p H l N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in m onolithic Darlington circuit for audio o utpu t stages and general purpose am plifier applications.

T2D 22 diode

Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Contextual Info: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA

BDT61F

Abstract: 61AF BDT61BF BDT60AF BDT60BF BDT60CF BDT60F
Contextual Info: BDT61F; 61AF BDT61BF; 61CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope w ith an electrically insulated mounting base. They are recommended fo r applications such as audio output stages and general purpose amplifiers.

BDT60

Abstract: BDT60C BDT60A BDT60B BDT61 BDT61A BDT61B BDT61C
Contextual Info: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature

BDT60C

Abstract: BDT61A BDT60 BDT60A BDT60B BDT61 BDT61B BDT61C
Contextual Info: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE

Contextual Info: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is obsolete and

Contextual Info: BDT61F; 61AF BDT61BF; 61CF _/ V SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base. They are recommended for applications such as audio output stages and general purpose amplifiers.

BDT61

Abstract: transistor BD 512 BDT60 BDT61B IEC134 1FC15
Contextual Info: BDT61;61A BDT61B;61C _ JV SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose am plifier applications. P-N-P complements are B D T 60, 60A , 60B and 60C. Q U IC K R E F E R E N C E D A T A

BDT60

Abstract: kia 494 BDT60B BDT61 BDT61A BDT61B BDT61C transistor 2TH transistor d 1991 ar
Contextual Info: BDT60;60A BDT60B;60C J ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA

Contextual Info: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is currently available, but

Contextual Info: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C T0-220 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature

BDT61F

Abstract: 61-BF 61AF BDT60AF BDT60BF BDT60CF BDT60F BDT61BF BDT61BF-BDT61CF
Contextual Info: 5HILIPS IN TE RN AT ION AL SLE ]> • 7110 BDT61F; 61AF BDT61BF; 61CF -J. fl5 b 0043230 ■PHIN 7^3 SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a m onolithic Darlington circuit and housed in a SOT 186 envelope w ith an electrically insulated mounting base.

61-BF

Contextual Info: BDT61F; 61AF BDT61BF; 61CF ’H I L I P S I N T E R N A T I O N A L 5fc,E D .J. 7110fl5b 0 0 4 3 2 3 D • 7^3 ■ P H I N SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope

TCS-11

Abstract: BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61B BDT61C
Contextual Info: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE

Contextual Info: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is currently available, but

Contextual Info: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is obsolete and

BDT60C

Abstract: BDT60 BDT60A BDT60B BDT61 BDT61A BDT61B BDT61C
Contextual Info: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE

sas110

Abstract: 750-AT-1 BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61B BDT61C
Contextual Info: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature

BDT618

Abstract: BDT60C ST BDT60C BOT61
Contextual Info: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK_ • Designed for Complementary Use with BDT60, BOT6OA, BDT60B and BDT60C • 50 W at 2S°C Case Temperature • 4 A Continuous Collector Current

Contextual Info: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C T 0 -2 2 0 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature

5BE1

Abstract: bdt61 Darlington NPN Silicon Diode
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.

Contextual Info: _ J v _ BDT61;61A BDT61B;61C SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60, 60A, 60B and 60C.

3DT60

Abstract: BDT61 BDT60 BDT60A BDT60B BDT60C BDT61B BDT61C BDV64
Contextual Info: c 2S5SS12 BDT60 , BDT60 A, BDT60 B, BDT60 C PNP SILICON POWER DARLINGTONS r f ï ï i ïI it ui • .IM I TO-220 PACKAGE TOP VIEW Designed for Complementary Use with BDT61, BDT61 A, BDT61B and BDT61C o B C 50 W at 25°C Case Temperature 4 A Continuous Collector Current

BDT61

Abstract: BDT60C BDT61C BDT60 BDT60A BDT60B BDT61A BDT61B
Contextual Info: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE