P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE Search Results

NDS336P

Contextual Info: N August 1996 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density,

diode 6t6

Abstract: NDC632P
Contextual Info: National June 1996 Semiconductor" NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

NDC652P

Contextual Info: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

NDB6020P

Abstract: NDP6020P
Contextual Info: N November 1996 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

marking 652 fairchild

Contextual Info: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

NDS356AP

Contextual Info: N September 1996 NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density,

NDB6030PL

Abstract: NDP6030PL 10v70
Contextual Info: June 1 997 FAIRCHILD MICDNDUCTDR t m NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

CBVK741B019

Abstract: F63TNR FDC633N NDC652P r rca 631
Contextual Info: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

Contextual Info: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

ARDV sot 23

Abstract: DS332P
Contextual Info: June 1997 FAIRCHILD M ICON DUCTOR tm NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

Contextual Info: March 1998 F/\IRCHII_ID M ICDNDUCTO R tm FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

bu 517

Abstract: NDS352P
Contextual Info: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

NDS352P

Contextual Info: March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -0.85A, -20V. RDS ON = 0.5Ω @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

Contextual Info: June 1997 RAIRCHII-D M ICDNDUCTO R tm NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

NDS352P

Contextual Info: March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -0.85A, -20V. RDS ON = 0.5Ω @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

FDC636P

Abstract: SOIC-16 iss-400 diode
Contextual Info: May 1998 FDC636P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

NDS356P

Contextual Info: March 1996 NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -1.1 A, -20V. RDS ON = 0.3Ω @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

NDS356P

Contextual Info: March 1996 NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -1.1 A, -20V. RDS ON = 0.3Ω @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

ndp602dp

Abstract: NDB6020P NDP6020P EFB810-3/4-3/NDP6020P
Contextual Info: |R C H | September 1997 SEM ICONDUCTÜR tm NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

FDN358P

Abstract: SOIC-16
Contextual Info: March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

NDS356AP

Contextual Info: September 1996 NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

NDB6030PL

Abstract: NDP6030PL
Contextual Info: June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDS336P

Contextual Info: June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high