P JFET Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA L O W P O W E R JFET IN P U T O P E R A T IO N A L A M P L IF IE R T h e s e J F E T in p u t o p e r a tio n a l a m p lif ie r s are d e s ig n e d fo r lo w p o w e r a p p lic a t io n s. T h e y fe atu re h ig h in p u t im p e d a n c e , lo w in p u t

2N3382

Abstract: 2N3384 2N3386 VCR3P
Contextual Info: p-channel JFET B designed f or . . . • General Purpose Amplifiers S ilic o n ix B EN EFIT S: • • Switches Wide Range of Transconductance TY P E PACKAG E PRIN CIPAL D EV IC ES Single Single TO-72 Chip 2N3382, 2 N 3384, 2 N 3386, V C R 3 P 2N3382CH P-86CH P, V C R 3 P C H P

TL066

Abstract: TL066BC TL066AC TL066C 2070-P
Contextual Info: 295 7 ° n ? "7 TL066 TEXAS INSTRUMENTS JFETA* T L 066C TL066A C TLQ66BC m ±18 V ± 15 ±15 V ± 30 ± 30 V P :-20—+85. PS:-20—+70 P:-20—+85, PS:-20— +70 P :-20—+85, PS:-20^—+70 °c P :680, PS:448 P:680, PS:446 P:680, PS:446 rnW V s=±15V l i S l Œ

Contextual Info: r r u n LT1793 m TECHNOLOGY Low Noise, P ic o a m p e re Bias C urrent, JFET In p u t O p A m p FCRTURCS DCSCRIPTIOn • Input Bias Current, Warmed Up: 10pA Max ■ 100% Tested Low Voltage Noise: 8nV/VHz Max ■ A Grade 100% Temperature Tested ■ Offset Voltage Over Temp: 1mV Max

IC OP AMP for Piezoelectric transducers

Abstract: op amp ad645
Contextual Info: r r u n LT1793 m TECHNOLOGY Low Noise, P ic o a m p e re Bias C urrent, JFET In p u t O p A m p FCRTURCS DCSCRIPTIOn • Input pias Current, Warmed Up: 10pA Max ■ 100% Tested Low Voltage Noise: 8nV/\/Hz Max ■ A Grade 100% Temperature Tested ■ Offset Voltage Over Temp: 1mV Max

2N2608

Abstract: 2N3329-32 2N3909 2N2843 2N2608CHP 2N2608JAN 2N2843CHP 2N3909CHP 2N284 p-channel jfet
Contextual Info: U & p-channel JFET B designed f o r . . . S ilic o n ix General Purpose Amplifiers and Attenuators TYPE PACKAGE P R IN C IP A L D E V IC E S Single Single Single TO-18 TO-72 Chip 2N 2608, 2N 2608JA N , 2N2843 2N3329-32, 2N3909, V C R 5 P 2N 2608C H P, 2 N2843CH P,

Contextual Info: r r u r m TECHNOLOGY _LT1169 Dual Low Noise, P ic o a m p e re Bias C urrent, JFET In p u t O p A m p F€RTUR€S DCSCRIPTIOn • Input Bias Current, W arm ed Up: 20pA Max ■ 100% Tested Low Voltage Noise: 8nV/Vflz Max ■ S8 and N8 Package Standard Pinout

Contextual Info: urm LT1464/LT1465 TECHNOLOGY D u a l/Q u a d M icro p o w e r, 1MHz C -L o a d P ic o a m p e re Bias C u rre n t JFET In p u t O p A m ps F€fflUR€S DcscMpnon • Input Bias Current: 2pA Max LT1464A 20pA Max(LT1464, LT1465) ■ Supply Current per Amplifier: 200pA Max

KF347

Abstract: KF347A
Contextual Info: KF347/A QUAD OPERATIONAL AMPLIFIER JFET QUAD JFET INPUT OPERATIONAL AMPLIFIERS T h e K F 3 4 7 is a h ig h s p e e d q u a d J F E T in p u t o p e ra tio n a l a m p lifie rs , al a m p lifie rs . T h is fe a tu re h ig h im p e d a n c e , h ig h s le w ra te ,

voltage limiter diode

Abstract: J500-505 J500CHP-505CHP J506-511 current regulator diode "current regulator diode" Siliconix 511
Contextual Info: n-channel JFET current regu lator diode 3 S ilic o n ix designed fo r . . . C urren t R egulation B E N E F IT S : C urren t Lim iting • S im p le T w o Lead Current S o u rce Biasing • S im p lifie s Floatin g Current So urces N o P ow er Su p p lies Required

HA-5082

Abstract: ha5082
Contextual Info: HARRIS HA-5082 Series Preliminary JFET Input Dual Operational Amplifiers DESCRIPTION • H IG H IN P U T I M P E D A N C E 1 0 '2 n • L O W IN P U T B I A S C U R R E N T 200pA • L O W IN P U T O F F S E T C U R R E N T 1 00 pA • L O W P O W E R C O N S U M P T IO N

lf412c

Abstract: LF412
Contextual Info: TEXAS INS TR LIN/INTFC 1ÔE » • 0=11,1724 0Q773Ö2 T LF412C DUAL JFET-INPUT OPERATIONAL AMPLIFIER 0 2 9 9 7 , M A R C H 1 9 8 7 -R E V IS E D M A Y 1 9 8 8 Low Input Bias Current Typically 50 p A D, JG , O R P P A C K A G E (T O P V IE W ) (OUTC • L o w Su p p ly C u rre n t. . . Typically 4 .5 mA

ADR441

Abstract: ADR440 ADR444 ADR445 ADR443 adr441brz
Contextual Info: Ultralow Noise, LDO XFET Voltage References with Current Sink and Source ADR440/ADR441/ADR443/ADR444/ADR445 PIN CONFIGURATIONS Ultralow noise 0.1 Hz to 10 Hz ADR440: 1 V p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p

jfet photodiode

Contextual Info: 53E Î • uim LINEAR TECHNOLOGY CORP T - 79-15 LT1057S8/LT1057IS8 TECHNOLOGY D C SC ftlPTIOn SSlfiMhö GDDbSHS 4Tb » L T C Dual JFET In p u t Precision High S p e e d O p A m p P R C K R G € /O R D € R inFOftfTlflTIOn The L T 1 0 5 7 is a matched J F E T input dual op amp featuring

VOUT64

Abstract: ADR443 adr441brz ADR440 ADR441 ADR444 ADR445 ADR441ARMZ-REEL7 RP 10K AD5235
Contextual Info: Ultralow Noise, LDO XFET Voltage References with Current Sink and Source ADR440/ADR441/ADR443/ADR444/ADR445 PIN CONFIGURATIONS Ultralow noise 0.1 Hz to 10 Hz ADR440: 1 V p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p

Contextual Info: Ultralow Noise, LDO XFET Voltage References with Current Sink and Source ADR440/ADR441/ADR443/ADR444/ADR445 Ultralow noise 0.1 Hz to 10 Hz ADR440: 1 µV p-p ADR441: 1.2 µV p-p ADR443: 1.4 µV p-p ADR444: 1.8 µV p-p ADR445: 2.25 µV p-p Superb temperature coefficient

AD520* differential amplifier

Abstract: ADR440 ADR441 ADR443 ADR444 ADR445
Contextual Info: Ultralow Noise, LDO XFET Voltage References with Current Sink and Source ADR440/ADR441/ADR443/ADR444/ADR445 PIN CONFIGURATIONS Ultralow noise 0.1 Hz to 10 Hz ADR440: 1 V p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p

ADR440

Abstract: ADR441 ADR443 ADR444 ADR445 adr441brz
Contextual Info: Ultralow Noise, LDO XFET Voltage References with Current Sink and Source ADR440/ADR441/ADR443/ADR444/ADR445 PIN CONFIGURATIONS Ultralow noise 0.1 Hz to 10 Hz ADR440: 1 V p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p

ADR440

Abstract: ADR441 ADR443 ADR444 ADR445 adr441brz
Contextual Info: Ultralow Noise, LDO XFET Voltage References with Current Sink and Source ADR440/ADR441/ADR443/ADR444/ADR445 PIN CONFIGURATIONS Ultralow noise 0.1 Hz to 10 Hz ADR440: 1 V p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p

J210

Abstract: J211 J212
Contextual Info: H n-channel JFETs designed f o r . S ilic o n ix P erform ance Curves N ZF Se e Section 5 • G e n e r a l P u rp ose A m p lifie rs k> o < - K> B E N E F IT S • High Gain G p s = 7000 /¿mho Minim um J211, J212 • High Input Impedance IQ S S = 100 p A M axim um

branding adr rm-8

Abstract: adr441brz ADR443 ADR441-ELECTRICAL 3004 soic8 ADR440 ADR441 ADR444 ADR445 ADR44x
Contextual Info: Ultralow Noise, LDO XFET Voltage References with Current Sink and Source ADR440/ADR441/ADR443/ADR444/ADR445 PIN CONFIGURATIONS Ultralow noise 0.1 Hz to 10 Hz ADR440: 1 V p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p

Contextual Info: 1M LT1169 TECHNOLOGY Dual Low Noise, P ico a m p e re Bias C u rre n t JFET Input O p A m p F€DTUR€S DCSCMPTIOn • Input Bias Current, Warmed Up: 10pA Max ■ 100% Tested Low Voltage Noise: 8nV/VHz Max The LT1169 achieves a new standard of excellence in noise

p1086

Abstract: p1087 "P-Channel JFETs" P1087 equivalent
Contextual Info: Temic P1086/1087 S e m i c o n d u c t o r s P-Channel JFETs Product Summary P a rt N um ber V GS o f f M a x ( V ) rj>s(on) M a x ( Q ) ÏJXofT) T y p ( p A ) Io n T y p ( n s ) P1086 10 75 -1 0 25 P1087 5 150 -1 0 30 Features Low On-Resistance: P1086 <75 Q

2N2608

Contextual Info: 2N2608 P-Channel JFET 8.79 Transistors JFETs P-Channel American Mi. 1 of 1 Home Part Number: 2N2608 Online Store 2N2608 Diodes P- C hannel J F ET Transistors Enter code INTER3 at checkout.* Integrated Circuits