P FET Search Results

PC923

Abstract: pc923 Integrated circuit PHOTOCOUPLER IA 05 OPIC
Contextual Info: SHARP PC923 PC923 ^ High Speed Photocoupler for M O S-FET/IGBT Drive L e a d f o r m in g ty p e I ty p e a n d ta p in g r e e l ty p e ( P ty p e ) a re a lso a v a ila b le . ( PC923I/PC923P ) T U V ( V D E 0 8 8 4 ) a p p ro v e d ty p e is a ls o a v a ila b le a s a n o p tio n .

Contextual Info: ¡H C . V P 0 10 4N 6 / V P 0 10 4N 7 V P 0 10 6N 6 / V P 0 1 0 6 N 7 P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Standard Commercial Devices Order Number / Package BV dss / B V ogs max 14-Pin P-DIP 14-Pin C-DIP* -40V 8 ÎÎ

Contextual Info: MOTOROLA LM11C LM11CL • SEMICONDUCTOR TECHNICAL DATA P R E C IS IO N O P E R A T IO N A L A M P L IF IE R S PRECISION OPERATIONAL AMPLIFIERS T h e L M 1 1 C is a p re c is io n , lo w d r if t o p e ra tio n a l a m p lifie r p r o ­ v id in g th e b e s t fe a tu re s o f e x is tin g FET a n d B ip o la r o p a m p s .

Contextual Info: I bb53^31 0024111 53fl « A P X Philips Semiconductors Data sheet status P r e lim in a r y s p e c ific a tio n 2N5116 NAf1ER philips/1>iscre:te: P-channel J-FET date of issue July 1993 FEATURES • P-channel complement of 2N4393 • Short sample and hold aperture

SMD10P05L

Abstract: 1A 5v input 5v output regulator SMD10P05 Matsuo Tantalum 2N3904 ICL7611 Si9433DY P-channel power mosfet
Contextual Info: DESIGN SHOWCASE P-FET linear regulator has low dropout voltage P-channel MOSFETs P-FETs , though more expensive than pnp transistors, are free of the dissipation loss associated with base drive in a pnp circuit. P-FETs also have a lower saturation voltage

str 6551

Abstract: str g 6551 PowerPC-620 powerPC 620
Contextual Info: PowerPC P relim in ary D a ta Highlights PowerPC 620 RISC Microprocessor P ro d u ct D escrip tion H ighlights 6 4 - b it A d v an c e d S u p e r s c a le r P r o c e sso r: Fetch and d ispatch up to 4 in stru ction s p e r cycle Sp ecu lative execution p a st 4

Contextual Info: _ _ VP0635 VP0640 — P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d(ON) BV dgs (max) (min) TO-39 TO-92 TO-220 DICE+ -350V 25Q -0.4A V P 0 635 N 2 V P 0 635 N 3 V P 0 635 N 5 V P 0 635 N D -400V

Contextual Info: _ J jjjj ^ _ VP0645 VP0650 _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package dss/ ^DS ON ^D(ON) b v dgs (max) (min) TO-39 TO-92 TO-220 DICE+ -450V 30Q -0.2A V P 0 645 N 2 V P 0 645 N 3 V P 0 645 N 5 V P 0 645 N D

IVN6000

Abstract: IVN6000KNT IVN6000KNS IVN6000KNR
Contextual Info: IVN6000 KN Series 450V n-Channel Enhancement-mode Vertical Power MOS FETs FEATURES APPLICATIONS • H ig h s p e e d , h ig h cu rre n t s w itch in g • S w itc h in g p o w e r s u p p lie s • Inherent cu rre n t s h a rin g c a p a b ility w h en p ara lle le d

IR 536

Abstract: TE 536
Contextual Info: N E /S U 536-T DESCRIPTION FEATURES The 536 is a spe cia l purpose h ig h p e rfo r­ m ance o p e ra tio n a l a m p lifie r u tiliz in g an FET in p u t stage fo r ex tre m e ly h ig h in p u t im pedance and low in p u t current. • • • • • •

12p20

Abstract: mtP12P20 fet IRF9640
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P o w er Field E ffe c t Transistors IRF9640 P-Channel Enhancement-Mode Silicon Gate TMOS This TM O S Pow er FET is d esigned fo r high speed p o w e r sw itch in g a p p lica tio n s such as s w itc h in g re g u la ­

TEA-1035

Abstract: NEC 2SJ330 2SJ330 MEI-1202 TC-2465 tc2465
Contextual Info: DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Ü— r 2SJ330 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ330 is P-channel M O S Field Effect Transistor designed PACKAGE DIMENSIONS in millimeters fo r solenoid, m otor and lam p driver.

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IS S U E 2 - S E P T E M B E R 94 FEATURES * 240 Volt V DS * R DS on =9i2 * Low threshold A P P L IC A T IO N S * Electronic H ook Switch REFER TO ZVP4424A FO R G R A P H S ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L

FR 151 diode

Abstract: Fly DS 100
Contextual Info: 2SK1278 FUJI POWER M OS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET F-V SERIES • Heatures lO utline D raw ings • lr elude fa st recovery diode • High voltage • Low driving p o w er ■ A p p lic a tio n s • IV o to r controlers • lr verters • C io p p o rs

bms 16s

Abstract: SWBT13 UT1553BCRTM ta306
Contextual Info: UT1553 BCRTM p Register-oriented architecture to enhance FEATURES p Comprehensive MIL-STD-1553 dual-redundant Bus p p p p p programmability p DMA memory interface with 64K addressability p Internal self-test p Radiation-hardened option available for 84-lead

100Z

Abstract: RA07M3340M ra07m3340
Contextual Info: ATTENTION M ITSUBISHI RF PO W ER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA07M3340M Silicon MOS FET Power Amplifier, 330-400MHz 7W PORTABLE RADIO PIN: 1 Pin :RF INPUT 2 V gg :GATE BIAS S U P P LY 3 V ddiDRAIN BIAS S U P P LY

P2955E

Abstract: 2955E TP2955E TP2955 sped sipa
Contextual Info: MOTOROLA Orctor Ms document SEMICONDUCTOR TECHNICAL DATA by MTP2955E/D Designer's Data Sheet M T P 2955E TM O S E-FET™ P o w er Field E ffe c t Transistor M otorola P rila rrtd Daylca P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES

Contextual Info: Sj j _ _ _ VP0104N6/VP0104N7 VP0106N6/VP0106N7 P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS/ BVdgs R Order Number / Package d S ON (max) 14-Pin P-DIP 14-Pin C-DIP* -40V 8Q V P 0 104 N 6 V P 0 104 N 7 -60V 8Q

bcrtm

Abstract: A438 UT1553 UT1553B MIL-STD-1773 UT1553BCRTM A2 SMD MARKING CODE
Contextual Info: UT1553 BCRTM p Register-oriented architecture to enhance FEATURES p Comprehensive MIL-STD-1553 dual-redundant Bus p p p p p programmability p DMA memory interface with 64K addressability p Internal self-test p Radiation-hardened option available for 84-lead

Contextual Info: ippf E f f. T,sr^p •'’V * PA83 • PA83A A P E X M IC R O T E C H N O L O G V C O R P O R A T IO N • A P P L IC A T IO N S HOTLINE 8 0 0 5 4 6 -A P E X 800-5 46-2 7 39 FEATURES • LOW BIAS CURRENT, LOW NOISE — FET Input • PROTECTED OUTPUT — Thermal Shutoff

MN103002

Contextual Info: The correction table in The Revised Edition of MN103002A LSI User's Manual From 3rd Edition 1st Printing to 5th Edition Errors Page - P.2 P.2 P.3 P.3 P.4 P.4 - - P.8 P.9 P.12 P.17 P.19 P.22 P.24 Corrections Page - (MN103002AYB (CSP) has been added to the products described in

P3N80

Abstract: 3N80 MTP3N75 mtp3n80 3N75 MOSFET 3N 200
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N75 M TM 3N80 M T P 3N 75 M T P 3N 80 Designer's Data Sheet Power Field Effect Transistor IM-Channel Enhancem ent-M ode Silicon G ate TM O S These TM O S P ow er FETs are designed fo r high vo ltag e , high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regu la to rs,

2sj111 fet

Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110
Contextual Info: ufcUM -3 o to 3: O a to N ro cn o > JUNCTION FET < |Yfs| T Y P . (MIN. IDSS Type No. A p p lic a t io n N-Channel General Purpose P-Channel V GDS 'G Pd (V) (mA) (mW) (mA) V DS Vqs (V) (V) NF M AX. Crss T Y P . V DS V GS V (mS) (V) (V) (pF) (V) d S F (MHz)

CFB0101

Contextual Info: - ££L "Ë T £K P ro d u c t S p e c ific a tio n s D ecem ber 1997 CFBOlOl Series General Purpose GaAs FETs 1 o f 2 F eatures □ H igh G ain □ 19 dB m P ow er O utput □ Ion Im p lan ted M aterial □ 70 M il Strip lin e C om m ercial P ackage