P CHANNEL Search Results

XC612

Abstract: XC612N
Contextual Info: AN010699 XC612 Series 2 Channel Voltage Detectors Application Notes = Index = Introduction P-2 Standard Circuits P-2 Notes on Use P-3 Application Circuits 1. High Voltage Detect Circuit P-5 2. Which Voltage Detector Detected ? P-6

AD7738

Abstract: 68HC11 AD7732 AD7734 AD7738BRU RU-28 DIN 2510 EB-850
Contextual Info: a FEATURES High Resolution ADC 24 Bits No Missing Codes ؎0.0015% Nonlinearity Optimized for Fast Channel Switching 18-Bits p-p Resolution 21 Bits Effective at 500 Hz 16-Bits p-p Resolution (19 Bits Effective) at 8.5 kHz 15-Bits p-p Resolution (18 Bits Effective) at 15 kHz

P06E

Abstract: RFT1P06E TB334
Contextual Info: CT T ODU CEMEN IL R P E A S T L R E P TE OL RE 88-IN om OBS ENDED 8 1 s OMM lication intersil.c RECSheet p @ p p Data December 2000 A NO p ta ral Cent ail: cen l l a C or em 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET [ /Title RFT1 P06E /Subject

sot-363 n-channel mosfet

Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel

ltyn

Contextual Info: S u p e r t a x in c . 4-Channel High Voltage Analog Switch Ordering Information_ Order Num ber / Package * Vpp ^NN +70V -70V 110V P-P +80V -80V 130V P-P 18-pin Plastic DIP Die HV1014C HV1014P HV1014X HV1016C HV1016P HV1016X 18-pin Ceramic

transistor wd sot-23

Abstract: B5G1 NDF0610 NDS0610
Contextual Info: É ^ J N ational Semiconductor" NDF0610 / . Pn NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m ode p ow er fie ld effect transistors are produced using National's p ro p rie ta ry, high cell density, DMOS tech no lo g y.

Contextual Info: SILICON N CHANNEL DUAL GATE MOS TYPE 3SK257 Unit in mm T V T U N E R , V H F RF A M P L IF IE R A P P L IC A T IO N S . F M T U N E R A P P L IC A T IO N S . 2. 1 ± 0 . 1 T V T U N E R , U H F RF A M P L IF IE R A P P L IC A T IO N S 1. 25 ± 0 . 1 • •

Contextual Info: HD49409FS P-in-P C o n tro ller w ith Built-in A/D, D /A C onverters Description Features The H D 49 409 F S is a m em ory controller for P-in-P (p ic tu re -in -p ic tu re ) system s and in co rp o ra te s a 1-channel 6-bit A/D converter, a 2-channel 8-bit

TD3001

Contextual Info: TD3001Y N- and P-Channel Half-Bridge MOSFETs 'Siliconix incorporated SO PACKAGE PRODUCT SUMMARY N-souRCE r r >d V ’X ’ (A) N-Channel 30 1.5 0.61 P-Channel -30 2 0.39 V (BR)DSS T I N-DRAIN N-GATE r r ~ l~ l N-DRAIN p-souRCE r r ~1~| P-DRAIN P-GATE C E

SMD10P05L

Abstract: 1A 5v input 5v output regulator SMD10P05 Matsuo Tantalum 2N3904 ICL7611 Si9433DY P-channel power mosfet
Contextual Info: DESIGN SHOWCASE P-FET linear regulator has low dropout voltage P-channel MOSFETs P-FETs , though more expensive than pnp transistors, are free of the dissipation loss associated with base drive in a pnp circuit. P-FETs also have a lower saturation voltage

D4353

Abstract: TC74HC43 TC74HC135
Contextual Info: V TC74HC4351AP/AF / TC74HC4352AP/AF TC74HC4353AP/AF TC74H C43 51A P/AF TC 74H C 43 52A P/AF TC 74H C 43 53A P/AF 8-CHANNEL ANALOG M U L T I P L E X E R / D E M U L T I P L E X E R WITH ADDRESS LATCH D U A L 4-CH ANNEL ANALOG M U L T I P L E X E R / D E M U L T I P L E X E R WITH ADDRESS LATCH

YTF531

Abstract: th204
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS i i YTF531 HIGH S P E E D , H I G H CURRENT SW ITCHIN G A P P L I C A T I O N S . IN D USTRIAL A P P LIC A TIO N S CHO PPER R E G U L A T O R , D C - O C C ON VER TER ANO HOTOR U n it DR IVE A P P L I C A T I O N S .

2SK1350

Abstract: transistor 2sk1350
Contextual Info: FIELD EFFECT TRANSISTOR 2SK1350 SILICON N CHANNEL MOS TYPE tt-M O S i i I N D U S T R I A L A P P I ¡ C A T IO N S H IG H S P E E D , HIGH CURRENT SW ITCHIN G A P P L I C A T I O N S . U n it CHOPPER REG U LATO R , D C - OC C ON VER TER AND MOTOR DR IVE A P P L I C A T I O N S .

87cl881

Abstract: 51xag30 89C138 80C654 83C751 83C752 87C748 87C749 87C750 87C752
Contextual Info: Philips Semiconductors 80C51 microcontroller family features guide Memory from 1K to 8K Prefix Part Number ROM/ROMless/ OTP/Flash P P 83C750 87C750 1K P P S S P P S S 83C748 87C748 83C751 87C751 83C749 87C749 83C752 87C752 2K P P P P P SC SC P P P P 80C51/80C31

M8402

Abstract: 041 DIODE
Contextual Info: S T M8402 S amHop Microelectronics C orp. P reliminary May.26 2004 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V

Contextual Info: _ J jjjj ^ _ VP0645 VP0650 _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package dss/ ^DS ON ^D(ON) b v dgs (max) (min) TO-39 TO-92 TO-220 DICE+ -450V 30Q -0.2A V P 0 645 N 2 V P 0 645 N 3 V P 0 645 N 5 V P 0 645 N D

HV1514P

Abstract: HV1514C HV1514
Contextual Info: HV15 LJi Supertex inc1 of 8 Decoded 8-Channel High Voltage Analog Switch Ordering Information Package Options 20-pin Plastic DIP Die In waffle pack 110V P-P HV1514C HV1514P HV1514X 130V P-P HV1516C HV1516P HV1516X EL Û. > 20-pin Ceramic Side-brazed DIP V nn

YTF543

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSH H IG H S P E E D ,H I G H CURRENT SW ITC H ING A P P L I C A T I O N S . IN D U S T R IA L A P P L IC A T IO N S C H O P P E R R E G U L A T O R , D C - O C C O N V E R T E R AN D H O T O R _ U n it

TEA-1035

Abstract: NEC 2SJ330 2SJ330 MEI-1202 TC-2465 tc2465
Contextual Info: DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Ü— r 2SJ330 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ330 is P-channel M O S Field Effect Transistor designed PACKAGE DIMENSIONS in millimeters fo r solenoid, m otor and lam p driver.

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1381 H IG H S P E E D , H I G H CURRENT SW ITC HIN G A P P L I C A T I O N S . IN D U S T R I A L A P P L I C A T I O N S R E L A Y D R IV E ,M O T O R D R IVE AND DC-DC CON VER TER A P P L I C A T I O N S .

FR 151 diode

Abstract: Fly DS 100
Contextual Info: 2SK1278 FUJI POWER M OS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET F-V SERIES • Heatures lO utline D raw ings • lr elude fa st recovery diode • High voltage • Low driving p o w er ■ A p p lic a tio n s • IV o to r controlers • lr verters • C io p p o rs

bms 16s

Abstract: SWBT13 UT1553BCRTM ta306
Contextual Info: UT1553 BCRTM p Register-oriented architecture to enhance FEATURES p Comprehensive MIL-STD-1553 dual-redundant Bus p p p p p programmability p DMA memory interface with 64K addressability p Internal self-test p Radiation-hardened option available for 84-lead

Contextual Info: Sj j _ _ _ VP0104N6/VP0104N7 VP0106N6/VP0106N7 P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS/ BVdgs R Order Number / Package d S ON (max) 14-Pin P-DIP 14-Pin C-DIP* -40V 8Q V P 0 104 N 6 V P 0 104 N 7 -60V 8Q

IRF7319

Abstract: 49AA
Contextual Info: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch