ORDERING AMERICAN TECHNICAL CERAMICS Search Results

Panasonic R1766

Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm

R1766

Contextual Info: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

ATC100A100JW

Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150
Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm

Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm

Contextual Info: AMERICAN TECHNICAL : ¡ ib J4E D • 0773MQR OOOtmq 1 ■ A T C / ^ ^ & 5 - d ‘7 «P M ID -K DIELECTRIC SERIES f"‘ ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications ^ M I D - K r# § ^ DIELECTRIC 1 I CAP. VALUES FROM

ATC100A101JW

Abstract: NE5531079A GRM31CR72A105KA01B ATC100A240JW American Technical Ceramics ordering American Technical Ceramics NE5531079A-T1-A LDMOS NEC ATC100A270JW
Contextual Info: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology and

ATC100A101JW

Abstract: ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531
Contextual Info: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology

RIO 1R1

Abstract: RIO+1R5
Contextual Info: AMERICAN TECHNICAL 34E ]> • G773 M C H DGQ070S 1 ■ ATC/| AX K-23 STABLE K DIELECTRIC CAP. VALUES FROM 0.1 pF to 10 pF ATC Millimeter Wavelength 111 and 116 Series Microcaps for RF/Microwave Applications Nominal dimensions approx. 10x actual size O

Contextual Info: AMERICAN TECHNICAL fi/ c a i 34E D 077340^ 0Q.Q07D3 fi * A T C A STABLE K DIELECTRIC SERIES K-14 STABLE K DIELECTRIC CAP. VALUES FROM .06 pF to 5.6 pF ATC Millimeter Wavelength 111 and 116 Series Microcaps for RF/Microwave Applications Nominal dimensions approx. 10x actual size

Contextual Info: AMERICAN^TECHNICAL 34E D □77340^ GQQG721 T • ATC f i ¡cap MID-K DIELECTRIC SERIES Ç ATC Millimeter Wavelength 111 and 116 Series MID-K ■;* , p : DIELECTRIC -I ?CAP. VALUES FR O M ; 2.7 pF to 270 pF / Microcaps® for RF/Microwave Applications H¡“T &

atc111

Abstract: 111SF220M100TT
Contextual Info: AMERICAN TECHNICAL fila C m _34E. » ' ' " ' ‘ 077340=1 000072=! M • ATC/4-05-q£-0? - " "" " ' «P HIGH K DIELECTRIC SERIES 'âÂiièsooô'-vi.:'*;^ ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications

Contextual Info: AMERICAN TECHNICAL : ¡ ib J4E D • 0773MQR OOOtmq 1 ■ A T C / ^ ^ & 5 - d ‘7 «P MID-K DIELECTRIC SERIES ^ M ID - K r# § ^ f"‘ ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications DIELECTRIC 1 I CAP. VALUES FROM

Contextual Info: PRELIMINARY RFHA1021L RFHA1021L 60W GaN Wide-Band Pulsed Power Amplifier The RFHA1021L is a 50V 60W high power amplifier designed for SBand pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high

D773

Contextual Info: 34E D AMERICAN TECHNICAL flic« P □77340^ QQQQ717 â MID-K DIELECTRIC SERIES * K-200 * QATC Millimeter Wavelength 111 and 116 Series 1 M ID-K " D IELECTRIC CAP. VALUES FRO M : . 0.9 p F to 82 pF Microcaps for RF/Microwave Applications Nominal dimensions approx. 10x actual size

MZ-270

Abstract: 111YJ221
Contextual Info: AMERICAN TECHNICAL 34E D 07 73 40 =^00007 25^7 • ATC> -fl5«65-o7, I [¡¡cap HIGH K DIELECTRIC SERIES «J í- -■í.'s'í i rÿ*?‘-ÿ'5-Í-iíálvAÍS:¿ i-ciïÿü* ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications

Contextual Info: AMERICAN TECHNICAL 34E » • GTTBMCH 0D0D7Q7 S ■ ATC4c&-d£-ô7 BA K-36 STABLE K DIELECTRIC CAP. VALUES FROM 0.2 pF to 15 pF ATC Millimeter Wavelength 111 and 116 Series Microcaps for RF/Microwave Applications Nominal dim ensions approx. 10x actual size

ATC100A101JT

Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm

Contextual Info: AMERICAN TECHNICAL 34E D 0 7 7 3 4 0 ^ 0 0 0 0 7 1 3 0 • ATC>|-05-Û5-07 — cc f i ¡cap STABLE K DIELECTRIC SERIES K-130 STABLE K DIELECTRIC CAP. VALUES FROM 0.6 pF to 56 pF jATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications

Contextual Info: RFHA1043 150W GaN Power Amplifier 1.2GHz to 1.85GHz The RFHA1043 is optimized for applications in the 1.2GHz to 1.85GHz frequency band. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high peak to average ratio applications, these high performance

111TCA

Abstract: 111UCA2R
Contextual Info: AMERICAN TECHNICAL 34E D • GTTBMCH 00DD711 7 ■ ATC / -ûS“ô^-C>7 CA K-62 STABLE K DIELECTRIC CAP. VALUES FROM 0.3 pF to 24 pF iATC Millimeter Wavelength 111 and 116 Series Microcaps for RF/Microwave Applications Nominal dimensions approx. 10x actual size)

Contextual Info: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)

ne5550

Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm

irl 1520

Abstract: rfha1043 IrL 1520 N
Contextual Info: RFHA1043 RFHA1043 1.2GHz to 1.85GHz 150W GaN Power Amplifier 1.2GHz to 1.85GHz 150W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 150W  Advanced Heat-Sink Technology   RF IN VGQ

Thin Film Resistors SiCr

Abstract: SiCr thin film TI SAC305 hfss 80Au-20Sn 3 to 10 GHz bandpass filter sac305 thermal conductivity 184394 ansoft SAC305 reflow bga
Contextual Info: AT C / / A V X T H I N F I L M TECHNOLOGIES Engineered Thin Film Solutions TA B L E O F C O N T E N T S Introduction to ATC // AVX Thin Film Technologies .1 - 2