CD4016BEX
Abstract: MCT thyristor 1000v MCT thyristor 100v A23 D-pak transistor 60n06 HARRIS CD4000 QML cdp68hc68 cd4000 cmos logic series guide SMD L4 Transistor SOT-223 CD4016BE
Contextual Info: Harris Semiconductor Ordering Information Guide PRODUCT NOMENCLATURES January 1998 S E M I C O N D U C T O R BR-027.4 HARRIS ORDERING NOMENCLATURE GUIDE Table of Contents PAGE HARRIS ORDERING NOMENCLATURE GUIDE Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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br-02782cxxxcd4016bexmct thyristor 1000v+8mct thyristor 100va23 d-paktransistor 60n06harris cd4000 qmlcdp68hc68cd4000 cmos logic series guidesmd l4 transistor sot-223cd4016be
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Ericsson Installation guide for RBS 6000
Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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304x264x130cl200tc554001fi-85ltc554001ftl-70+16bmsktopas900bmsktopas87010/100tx13x7635x10019x89ericsson installation guide for rbs 6000ericsson rbs 6000 series installation manualphilips twin eye pln 2032ericsson rbs 6000ericsson rbs 6000 hardware manualericsson rbs 3206dil relay 349-383igbt semikron 613 gb 123 ctericsson rbs 6000 seriesz0765a08psc
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SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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734tluweb-modem-34hcs412/wmtlv320aic10ipfb+15100mbneon250ga-60xm7eblk32x40blk32x42skiip 33 nec 125 t2skiip 613 gb 123 ctrbs 6302 ericssonskiip 513 gb 173 ctthermistor ml tdk 150mpioneer pal 010aproject report of smoke alarm using ic 555 docskiip 83 ec 125 t1ericsson rbs 6000 series installation manualericsson installation guide for rbs 6302
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dinverter 768r
Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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hef4527bthef4531bthef4534bphef4534bt+16msp-stk430x320ad9054/pcbad9054bst-135ips521gips521sirl2203sdinverter 768rg7d-412sericsson installation guide for rbs 6201omron g7dth3 thermistor6201 rbs ericsson user manualtms77c82nlreed relay rs 349-355i ball 450 watt smps repairingrbs -ericsson 6601
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60N06
Abstract: of 60N06 60N06L-TA3-T transistor 60n06 30V 60A power p MOSFET 60N06-TA3-T mosfet p 30v 60a
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom
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60n0660n06l60n06-ta3-tqw-r502-121+5of 60n0660n06l-ta3-ttransistor 60n0630v 60a power p mosfetmosfet p 30v 60a
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MOSFET N-CHANNEL 60v 60A
Abstract: 60n06 60n06l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom
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60n06115pfqw-r502-121mosfet n-channel 60v 60a+160n06l
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60N06
Abstract: datasheet of 60N06 60N06L-TA3-T 30V 60A power p MOSFET transistor 60n06 302010S ultra low power mosfet fast switching 30Atyp
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom
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60n0660n06l-ta3-t60n06g-ta3-to-220+960n06l-tf3-t60n06g-ttqw-r502-121datasheet of 60n0630v 60a power p mosfettransistor 60n06302010sultra low power mosfet fast switching30atyp
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit
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60N06LG
Abstract: NTB60N06LT4G 60N06 NTB60N06L NTB60N06LG NTB60N06LT4 NTP60N06L NTP60N06LG NTx60N06
Contextual Info: NTP60N06L, NTB60N06L Power MOSFET 60 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. 60 AMPERES, 60 VOLTS
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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20n1535n05mje13002 to92ur3060+5an803 motorola2n6823isolated dc-dc mc34063mje12007motorola switchmode 1 special
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Contextual Info: NTP60N06L, NTB60N06L Power MOSFET 60 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. 60 AMPERES, 60 VOLTS
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55N10
Abstract: transistor 60n06 MTM55N08 MTM60N05 60N06 60N05 55N08 55N08/M
Contextual Info: MOTOROLA SEMICONDUCTOR MTM55N08 MTM55N10 MTM60N05 MTM60N06 TECHNICAL DATA D i'signtM -’s D a t a 55 and 60 AMPERE N-CHAIMNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR rDS on = 0 04 0HM 80 and 100 VOLTS These TM OS Power FETs are designed for low voltage, high
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mtm55n08mtm55n10mtm60n05mtm60n06+660n0555n10transistor 60n0660n0655n0855n08/m
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60N06
Abstract: motorola mosfet
Contextual Info: MOTOROLA SC XSTRS/R F bf l E T> b 3 b 7 ES4 DOTflbn M O TO R O LA •I SEMICONDUCTOR MTM55N10 MTM60N06 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 55 and 60 A M P E R E N-CHANNEL T M O S POWER FETs N - C H A N N E L E N H A N C E M E N T - M O D E S IL IC O N G A T E
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mtm55n10mtm60n06o-204aa97a-01+497a-03o-204ae60n06motorola mosfet
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MTM13N50E
Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”
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buz10buz11buz11abuz11s2+16buz15buz171buz20buz21buz23buz31mtm13n50ep40n1024n40p50n058n50epower mosfet cross reference guidemotorola 20n50etp50n05eirf510 mosfet irf64033n10e
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MTM55N10
Contextual Info: fy«_/ ^smi-donauctoi LProducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM55N10 MTM60N06 55 and 60 AMPERE N-CHANNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
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55n10
Abstract: transistor 60n06 60N06 MTM60N06 MTM60N05 MTM55N08 sc 3228 MTM55N10 of 60N06 S0020
Contextual Info: MOTOROLA SC XSTRS/R bflE T> m F b3b7ES4 D O T flb n 0 7 e! • MOTOROLA ■I SEMICONDUCTOR MTM55N10 MTM60N06 TECHNICAL DATA D e s i g n e r ’s D a t a Sheet 55 and 60 AMPERE N-CHANNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
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b3b72s4mtm55n10mtm60n06vi55n+855n10transistor 60n0660n06mtm60n05mtm55n08sc 3228of 60n06s0020
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MTM20N08
Abstract: MTP2P45 MTM35N05 IRF123 IRF150 MTM10N08 MTM12N08 MTM12P08 MTM25N08 MTM55N08
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08
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o-204aairf150mtm55n10mtm8n08+10mtm8p08mtm10n08mtm12p08mtm12n08mtm20n08mtm25n08mtp2p45mtm35n05irf123mtm55n08
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50N05
Abstract: 60N05 TO-254AA OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA OM60N06SA TO254-AA
Contextual Info: OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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om60n06saom60n05saom50n06stom50n06sa+9om50n05saom50n05sto-257o-254mil-s-1950050n0560n05to-254aato254-aa
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MTP3055A
Abstract: MTM12N06 mtp25n06 MTM20N08 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08
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50n05
Abstract: SMP50N05 SMP60N05 s0n06 smp60n06 60n05 SMP50N06 60N06 50n06 siliconix SMP50N06-18
Contextual Info: lêE I SILICONIX INC <MmW C rS • 8254735 0014173 7 ■ SMP60N06/05, SMP50N06/05 ilì c o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistors TO-220AB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BRJDSS SMP60N06 60 0.023 60 SMP60N05 50 0.023 60 SMP50N06
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25473sgq14t73smp60n06/05smp50n06/05+11smp60n06smp60n05smp50n06smp50n05o-220ab60n0650n05s0n0660n0550n06siliconix smp50n06-18
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50n06
Contextual Info: OM60N06SA OM60N05SA OM50N06ST OM50N06SA QM50N05SA QM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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50n05
Abstract: C181 VPS 12g 60N05 OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA OM60N06SA
Contextual Info: OM6ONO6SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW R DS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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50n05
Abstract: LD55A
Contextual Info: OM6ONO6SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW R DS on POW ER M O SFETS IN H ERM ETIC ISO LATED PACKAGE 50V A n d 60V Ultra L o w R DS(0nl Pow er MOS FETs In TO-257 A nd TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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50N05
Abstract: OM60N06SA OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA
Contextual Info: OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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