O10L Search Results

Contextual Info: PRELIMINARY IDT70V27S/L HIGH-SPEED 3.3V 32Kx 16 DUAL-PORT STATIC RAM In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • IDT70V27 easily expands data bus w idth to 32 bits or more using the M aster/Slave select when cascading more than one device

Contextual Info: IDT7133SA/LA IDT7143SA/LA CMOS DUAL-PORT RAMS 32K 2Kx 16-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access — Military: 25/35/45/55/70/90ns (max.) — Commercial: 20/25/35/45/55/70/90ns (max.) • Low-power operation — IDT7133/43SA

Contextual Info: HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM PRELIMINARY IDT70V927S/L In te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed clock to data access

Contextual Info: PRELIMINARY IDT70V24S/L HIGH-SPEED 3.3V 4K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Interrupt Flag • Devices are capable of withstanding greater than 2001V

Contextual Info: IDT7133SA/LA IDT7143SA/LA CMOS DUAL-PORT RAMS 3 2 K 2 K x 16-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access — Military: 35/45/55/70/90ns (max.) — Com mercial: 25/35/45/55/70/90ns (max.) • Low-power operation — IDT7133/43SA

Contextual Info: IDT7133SA/LA IDT7143SA/LA HIGH SPEED 2 K X 16 DUAL-PORT SRAM F e a tu re s ♦ High-speed access ♦ BUSY output flag on IDT7133; BUSY input on IDT7143 - M ilitary: 25/35/45/55/70/90ns max. ♦ Fully asynchronous operation from either port - Industrial: 55ns (max.)

Contextual Info: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L Integrated Device Technology, Inc. • FEATURES: • • • • • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the same m em ory location High-speed access — Com mercial: 25/35/55ns max.

Contextual Info: PRELIMINARY IDT70V27S/L HIGH-SPEED 3.3V 3 2Kx 16 DUAL-PORT STATIC RAM In te g ra te d D e vice T e ch n o lo g y, Inc. FEATURES: • • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.

Contextual Info: CYDC128B16 1.8 V 4 K/8 K/16 K x 16 and 8 K/16 K × 8 ConsuMoBL Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location ■ Full asynchronous operation ■ 4/8/16 K × 16 and 8/16 K × 8 organization

A12L

Abstract: A14L IDT70V3579 IDT70V3579S
Contextual Info: HIGH-SPEED 3.3V 32K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 5/6ns max. Pipelined output mode

A14L

Contextual Info: HIGH-SPEED 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM PRELIMINARY IDT70927S/L Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed clock to data access — Commercial: 20/25/30ns

025X

Abstract: A12L IDT7025 IDT7025L IDT7025S A0L-A12L
Contextual Info: HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35/55/70ns max. – Industrial: 55ns (max.) – Commercial: 15/17/20/25/35/55ns (max.)

70v3319s133

Abstract: 70V3319 A12L IDT70V3319 IDT70V3319S 70V3319S 70V3319PRF
Contextual Info: HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V3319S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access

sem 3040

Abstract: DSC-3040 A12L A13L IDT70V261 IDT70V261L IDT70V261S IDT70V261PF
Contextual Info: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V261S Active: 300mW (typ.)

A14L

Abstract: IDT70V9279 IDT70V9279L IDT70V9279S
Contextual Info: HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9279S/L Integrated Device Technology, Inc. FEATURES: • Full synchronous operation on both ports - 4ns setup to clock and 1ns hold on all control, data, and address inputs

sem 3040

Abstract: DSC-3040 A12L A13L IDT70V261 IDT70V261L IDT70V261S 70V261L
Contextual Info: PRELIMINARY IDT70V261S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.

A12L

Abstract: A13L CY7C026A CY7C036A IDT70261
Contextual Info: 25/0251 CY7C026A CY7C036A 16K x 16/18 Dual-Port Static RAM • Automatic power-down • Expandable data bus to 32/36 bits or more using Master/Slave chip select when using more than one device • On-chip arbitration logic • Semaphores included to permit software handshaking

Dynachip

Abstract: SR flip flop using discrete gates T flip flop pin configuration DL-5000 i33b DL5000 DL5064 DL5256 DL5528 MUX24
Contextual Info: DL5000 Family Fast Field Programmable Gate Array Features • Fast Field Programmable Gate Arrays™ Patented Active Repeater™ Architecture Data and Clock Rates up to 270 MHz Complex operations up to 200 MHz Input Block Register Setup Time 800 ps Output Block Register Clock-to-out 1.6 ns

n10u

Abstract: n10e Diode N10Z N10Y N10Z 738 39A diode N10H n10g p10j n10p
Contextual Info: Silicon Avalanche Diodes 1000W Surface Mount Transient Voltage Suppressor RoHS 1KSMBJ Series The 1KSMBJ range of surface mount protectors utilizes the proven glass passivated technology used in many Littelfuse product portfolios. Rated at 1000 watts 10 x 1000 µs double

IDT7024

Abstract: IDT7024L IDT7024S
Contextual Info: IDT7024S/L HIGH-SPEED 4K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. more than one device • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Busy and Interrupt Flags • On-chip port arbitration logic • Full on-chip hardware support of semaphore signaling

2746 transistor

Abstract: IDT7133 IDT7143 J68 10A K 2746
Contextual Info: IDT7133SA/LA IDT7143SA/LA HIGH SPEED 2K X 16 DUAL-PORT SRAM Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 25/35/45/55/70/90ns max. – Industrial: 25/35/55ns (max.) – Commercial: 20/25/35/45/55/70/90ns (max.) Low-power operation – IDT7133/43SA

7024s

Contextual Info: IDT7024S/L HIGH-SPEED 4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35/55/70ns max. – Industrial: 55ns (max.) – Commercial: 15/17/20/25/35/55ns (max.)

A13L

Abstract: IDT70261 IDT70261L IDT70261S
Contextual Info: HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Industrial 25ns max. – Commercial: 15/20/25/35/55ns (max.)

A13L

Abstract: IDT709269 IDT709269S
Contextual Info: PRELIMINARY IDT709269S/L HIGH-SPEED 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 9/12/15ns max.