NXP 2N7002 Search Results

PEMD18

Contextual Info: Small, efficient, and robust solutions for digital still cameras NXP discretes for power management, interface, and general-purpose applications NXP discretes for digital still cameras Digital still cameras DSCs are demanding designs. They are portable, battery-powered systems, so they require

prtr5v0u6s

Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years

Contextual Info: High performance aerospace and defense solutions Introduction NXP Semiconductors has been a trusted source and a leading provider of components to the Aerospace and Defense market for over 30 years. NXP’s components are applied in a wide array of Aerospace and Defense systems including Radar, SDR Software Defined Radio , ECM (Electronic Countermeasures) and

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

NX3008NBKMB

Abstract: IP4303CX4 PCMF2DFN1
Contextual Info: Safeguard sensitive ICs - Increase battery life - Save space With NXP key products as recommended in this brochure Interface / Function Description Product type Package NFC antenna protection 18 / 24 V Birectional low capacitance ESD protection diode PESD18VF1BL

BSS138 NXP

Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Contextual Info: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

2N7002

Contextual Info: SO T2 3 2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 — 8 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Trench MOSFET technology. 1.2 Features and benefits

Contextual Info: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 2 — 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

2N7002BK

Abstract: 771-2N7002BK215 trench relay
Contextual Info: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

2N7002PT

Contextual Info: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

smd transistor marking zg

Abstract: transistor smd zG TRANSISTOR SMD MARKING zg 2n7002bkv NXP SMD mosfet MARKING CODE NXP SMD TRANSISTOR MARKING CODE s1 2N7002BKV/DG/B2115
Contextual Info: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

TRANSISTOR SMD MARKING zg

Abstract: 2N7002BKV transistor smd zG TRANSISTOR SMD MARKING CODE zg
Contextual Info: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

2N7002BKW

Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2012051

Abstract: NXP SMD mosfet MARKING CODE 2n7002bk
Contextual Info: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 2 — 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

2N7002 NXP MARKING

Abstract: 2N7002 2N7002 NXP nxp 2n7002 sot23 nxp 2n7002 marking nxp 2N7002
Contextual Info: SO T2 3 2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 — 8 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Trench MOSFET technology. 1.2 Features and benefits

smd code marking WV

Abstract: nxp p mosfet 2N7002P
Contextual Info: 2N7002P 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

2N7002BKS

Abstract: dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt
Contextual Info: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

smd transistor marking z8

Abstract: 771-2N7002BKM315
Contextual Info: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

2N7002BKT

Abstract: marking code Z3
Contextual Info: 2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2N7002PT

Abstract: nxp marking code Z1 SC-75 marking code BV SMD Transistor transistor smd code marking nc
Contextual Info: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2N7002PW

Contextual Info: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET