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    2012051 Search Results

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    TE Connectivity T4112012051-000

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    Avnet Americas () T4112012051-000 Bulk 1
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    TE Connectivity T4142012051-000

    Conn M12 Circular PIN 5 POS Solder ST Panel Mount 5 Terminal 1 Port Pack - Bag (Alt: T4142012051-000)
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    Bourns Inc CVH201205-1R0M

    Power Inductor (SMD), 1 uH, ? 20%, 800 mA, Shielded, 2mm x 1.25mm x 0.5mm - Tape and Reel (Alt: CVH201205-1R0M)
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    Avnet Americas CVH201205-1R0M Tape & Reel 20 Weeks 4,000
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    Mouser Electronics CVH201205-1R0M 7,488
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    CVH201205-1R0M Cut Tape 2,228 10
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    RS CVH201205-1R0M Bulk 16 Weeks 4,000
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    TME CVH201205-1R0M 3,400 3,400
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    TE Connectivity T4132012051-000

    Conn Circular M 5 POS Solder Cup ST Panel Mount 5 Terminal 1 Port - Bag (Alt: T4132012051-000)
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    Avnet Americas T4132012051-000 Bag 16 Weeks, 3 Days 200
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    Mouser Electronics T4132012051-000 882
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    Newark () T4132012051-000 Bulk 1,252 1
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    RS T4132012051-000 Bulk 96 3 Weeks 1
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    Interstate Connecting Components T4132012051-000
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    Powell Electronics T4132012051-000 1,910 25
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    Master Electronics T4132012051-000 3,162
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    Molex 22-01-2051

    Connector Housing, Receptacle, 5 Contacts, 1 Row, 2.54 mm, 2695 Series, Nylon, KK 254, White - Bulk (Alt: 0022012051)
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    Avnet Americas 22-01-2051 Bulk 16 Weeks 10,000
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    Mouser Electronics 22-01-2051 20,478
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    Newark () 22-01-2051 Bulk 1,711 1
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    22-01-2051 Bulk 10,000
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    Interstate Connecting Components 22-01-2051 630
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    Component Electronics, Inc 22-01-2051 82,279
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    2012051 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TPH8R80ANH MOSFETs Silicon N-channel MOS U-MOS-H TPH8R80ANH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 13 nC (typ.)


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    tph8r80anh PDF

    TPN30008NH

    Contextual Info: TPN30008NH MOSFETs Silicon N-channel MOS U-MOS-H TPN30008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.1 nC (typ.)


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    tpn30008nh PDF

    mlz2012

    Abstract: MLZ2012N100LT MLZ2012N MLZ2012M MLZ1608N100LT MLZ2012N4R7 MLZ1608A mlz1608m220 MLZ2012M150W MLZ1005M1R0W
    Contextual Info: Inductors for Decoupling Circuits Multilayer/STD • magnetic shielded MLZ series Type: MLZ1005W MLZ1608 MLZ2012 1005[0402 inch]* 1608[0603 inch] 2012[0805 inch] * Dimensions Code JIS[EIA] Issue date: May 2012 • All specifications are subject to change without notice.


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    mlz1005wmlz1608mlz20122002/95/ec+13300min160min200min60minmlz2012n100ltmlz2012nmlz2012mmlz1608n100ltmlz2012n4r7mlz1608amlz1608m220mlz2012m150wmlz1005m1r0w PDF

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


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    ptfb212507sh200-watth-34288g-4/2transistor tl131+8tl231tl127tl130tl131transistor tl1208c802tl-130lm78l05acmnd PDF

    Contextual Info: TPH8R008NH MOSFET シリコンNチャネルMOS形 U-MOS-H TPH8R008NH 1. 用途 • DC-DCコンバータ用 • スイッチングレギュレータ用 • モータドライブ用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2) スイッチングスピードが速い。


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    tph8r008nh PDF

    Contextual Info: TPH12008NH MOSFET シリコンNチャネルMOS形 U-MOS-H TPH12008NH 1. 用途 • DC-DCコンバータ用 • スイッチングレギュレータ用 • モータドライブ用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2) スイッチングスピードが速い。


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    tph12008nh PDF

    Contextual Info: A Dimensions: [mm] B Hole Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 1000 µH ±10% Rated Current ∆T = 40 K IR 0.23 A max. Saturation Current |ΔL/L| < 10% Isat 0.25 A typ. DC Resistance RDC


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    2012-ury PDF

    Contextual Info: A Dimensions: [mm] B Hole Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 4700 µH ±10% Rated Current ∆T = 40 K IR 0.11 A max. Saturation Current |ΔL/L| < 10% Isat 0.14 A typ. DC Resistance RDC


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    2012-05-1n PDF

    Contextual Info: A Dimensions: [mm] B Recommended hole pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 2200 µH ±10% Rated current ∆T = 40 K IR 0.16 A max. Saturation current |ΔL/L| < 10% 0.18 A typ. DC Resistance


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    PDF

    Contextual Info: A Dimensions: [mm] B Hole Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 3300 µH ±10% Rated Current ∆T = 40 K IR 0.13 A max. Saturation Current |ΔL/L| < 10% Isat 0.15 A typ. DC Resistance RDC


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    2012-ury PDF

    Contextual Info: A Dimensions: [mm] B Hole Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 8200 µH ±10% Rated Current ∆T = 40 K IR 0.05 A max. Saturation Current |ΔL/L| < 10% Isat 0.05 A typ. DC Resistance RDC


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    2012-05-1n PDF

    Contextual Info: A Dimensions: [mm] B Hole Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 5600 µH ±10% Rated Current ∆T = 40 K IR 0.10 A max. Saturation Current |ΔL/L| < 10% Isat 0.07 A typ. DC Resistance RDC


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    2012-ury PDF

    Contextual Info: A Dimensions: [mm] B Recommended hole pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 4700 µH ±10% Rated current ∆T = 40 K IR 0.11 A max. Saturation current |ΔL/L| < 10% 0.14 A typ. DC Resistance


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    PDF

    840S

    Contextual Info: Ordering number : ENA2063 CMOS IC LC72725KMA RDS RBDS Demodulation IC Overview The LC72725KMA is IC that implement the signal processing required by the European Broadcasting Union RDS (Radio Data System) standard and by the US NRSC (National Radio System Committee) RBDS (Radio Broadcast Data


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    ena2063lc72725kma57khz100ms+2a2063-9/9840s PDF

    Contextual Info: Visible Red Emitter Product No: M TE7 0 0 0 N2 -R Peak Emission Wavelength: 700nm The MTE7000N2-R is a red, 5mm water clear emitter designed for applications requiring lat top, high power output and high reliability in a wide angle package. F EATU RES AP P L IC ATIO N S


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    700nmmte7000n2-r PDF

    Contextual Info: 122 series features • PCB Mounting Ø 3mm LED • Material conforms to UL94 V-O flammability ratings • Colour diffused lens, white diffused for bi-colour options • Reverse polarity options available • Custom built multi-colour permutations available


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    PDF

    Contextual Info: 151 series features • PCB Mounting Ø 5mm LED • Material conforms to UL94 V-O flammability ratings • Independent addressability enhances drive circuit options for tri-colour status indication • Reverse polarity options available • Customised lead lengths available


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    PDF

    Contextual Info: Inductors for Power Circuits Wound/STD • magnetic shielded CLF-D series Type: CLF7045-D 6.9x7.2 mm Issue date: May 2012 • All specifications are subject to change without notice. • Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific


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    clf7045-d2002/95/ecclf7045t-471m-d100khz PDF

    Contextual Info: A Dimensions: [mm] B Recommended hole pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 68 µH ±10% Rated current ∆T = 40 K IR 1.5 A max. Saturation current |ΔL/L| < 10% 1.0 A typ. DC Resistance


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    PDF

    Contextual Info: Infrared Emitter Product No: M TE8800N1 Peak Emission Wavelength: 880nm The MTE8800N1 consists of a 880nm high output infrared die in a water-clear 5mm plastic molded package. Custom package solutions and sorting are available. FEATURES APPLICATIONS > High Output Power


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    te8800n1880nmmte8800n1volt-956-2980 PDF

    Contextual Info: Visible Red Emitter Product No: M T E 1077N1-R Peak Emission Wavelength: 770nm The MTE1077N1-R is a red T 1 3/4, 5mm water clear emitter designed for applications requiring high power output and high reliability in a narrow angle package. FEATURES APPLICATIONS


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    1077n1-r770nmmte1077n1-re1077n1-r PDF

    Contextual Info: High Power Infrared Emitter Product No: MTE8 7 6 0 C Peak Emission Wavelength: 870nm The MTE8760C consists of a 870nm high output infrared die in a water-clear 3mm plastic molded package. Custom package solutions and sorting are available. F EATU RES AP P L IC ATIO N S


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    870nmmte8760c PDF

    Contextual Info: Visible Red Emitter Product No: M TE5 0 6 6 CJ -UR Peak Emission Wavelength: 660nm The MTE5066CJ-UR is a red T 1, 3mm water clear emitter designed for applications requiring high power output and high reliability in a narrow angle package. It can be custom sorted for speciic power output ranges.


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    660nmmte5066cj-ur PDF

    Contextual Info: Advanced Power Electronics Corp. AP1280AGN3 2A SINK/SOURCE BUS TERMINATION REGULATOR FEATURES DESCRIPTIOON Ideal for DDR-I, DDR-II and DDR-III VTT Applications The AP1280AGN3 is a simple, cost-effective and high-speed linear regulator designed to generate


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    ap1280agn3 PDF