NPN TRANSISTOR TO 92 S8050 Search Results

NPN TRANSISTOR TO 92 S8050 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RX1214B130YI		Rochester Electronics LLC	NPN microwave power transistor	PDF
MX0912B251Y		Rochester Electronics LLC	NPN microwave power transistor	PDF
RZ1214B35YI		Rochester Electronics LLC	NPN microwave power transistor	PDF
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet

NPN TRANSISTOR TO 92 S8050 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	S8050 S8550 500mA 500mA, 30MHz	PDF
transistor TO-92 S8050 Abstract: transistor S8050 S8050 BR S8050 S8050 transistor TO-92 S8050 equivalent S8050 TRANSISTOR NPN FEATURES S8550 S8550 equivalent S8050 TO-92 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	S8050 S8550 500mA 500mA, 30MHz transistor TO-92 S8050 transistor S8050 S8050 BR S8050 S8050 transistor TO-92 S8050 equivalent S8050 TRANSISTOR NPN FEATURES S8550 S8550 equivalent S8050 TO-92	PDF
Contextual Info: TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 2. COLLECTOR W (Tamb=25℃) 3. BASE Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range	Original	S8050 500mA 500mA, 30MHz	PDF
Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. S8050 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92 * Complement to S8550 * Collector Current :Ic=500mA * High Total Power Dissipation: pC=625mW ABSOLUTE MAXIMUM RATINGS at Tamb=250C	Original	S8050 S8550 500mA 625mW 100uA 500mA	PDF
Contextual Info: S8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 3.5 ±0.2 4.55±0.2 4.5±0.2 FEATURES Power dissipation O 0.625 W Tamb=25 C 14.3 ±0.2 PCM: Collector current	Original	S8050T 01-Jun-2002	PDF
s8050 d h Abstract: NPN S8550 s8550 npn transistor s8050 s8550 d h S8550 D S8550 equivalent S8050 S8550 S8050 npn Contextual Info: S8050 NPN EPITAXIAL SILICON TRANSISTOR High Current Application High Collector Curre nt Ic=700mA TO- 92 High Collector P owe r Dissipa tion P c=625mW Comple mentary to S8550 ABS OLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value Unit Collector-Ba s e Volta ge	Original	S8050 700mA 625mW S8550 100mA 500mA 500mA, s8050 d h NPN S8550 s8550 npn transistor s8050 s8550 d h S8550 D S8550 equivalent S8050 S8550 S8050 npn	PDF
S8050 TRANSISTOR Abstract: transistor s8050 BR S8050 S8050 NPN Power Transistor s8050 S8050 equivalent S8050 TRANSISTOR NPN FEATURES s8050 npn transistor br s8050 d .s8050 transistor Contextual Info: S8050 S8050 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃	Original	S8050 500mA 500mA, 30MHz S8050 TRANSISTOR transistor s8050 BR S8050 S8050 NPN Power Transistor s8050 S8050 equivalent S8050 TRANSISTOR NPN FEATURES s8050 npn transistor br s8050 d .s8050 transistor	PDF
S8050 Abstract: S8050 TRANSISTOR BR S8050 transistor S8050 transistor D S8050 s8050 d h S8050 equivalent transistor TO-92 S8050 1000I S8050 TO-92 Contextual Info: S8050 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.5 A Collector-base voltage V (BR)CBO :40 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C	Original	S8050 S8050 S8050 TRANSISTOR BR S8050 transistor S8050 transistor D S8050 s8050 d h S8050 equivalent transistor TO-92 S8050 1000I S8050 TO-92	PDF