NPN TRANSISTOR KTC 200 Search Results

KTA950

Abstract: ktc2120 C 2120 Y NPN transistor KTC 200
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE POT PROCESS KTC 2120 APPLICATIONS I Low F r e q u e n c y P o w e r A m p lifie rs ( B - C la s s P u s h - p u l l , P o = lW ) I General P u r p o s e S w itc h in g C i r c u its FEATURES »Excellent Ii f e

kta1013

Abstract: TIC 160 VCEO160V
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KTC 2383 U nit in m m ) . • Color T V jV ERT. D e f le c tio n O utput. ■ Color T V C l a s s B S o u n d O utput. ( FEATURES ) • High V o lta g e ! V ceo^ ^ O V • L a r g e C o n tin u o u s C o l l e c t o r C u r r e n t C a pability.

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

NPN Bipolar Transistor

Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
Contextual Info: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package

2N3440 MOTOROLA

Abstract: 2N5416 motorola 2n3439 motorola 2N3439 2N5415 MOTOROLA 2N3440 2N5415 2N6410 motorola 2n5416 transistor 2n3439
Contextual Info: M A X IM U M RATIN G S IP Symbol Rating NF»N 2N3440 2NC41B 2N5416 2N3439 Collector-Emltter Voltage Vc e o 200 300 360 260 Vdc Collector-Base Voltage Vc b O 200 350 490 300 Vdc Emitter-Base Voltage Vebo 4.0 6.0 7.0 7.0 Vdc Baas Current Ib 0.5 Ade Collector Current —

TA2765

Abstract: 2N5240 TA2765A 2n5239 Pt-100W
Contextual Info: File Number HARRI S 321 SEHICON] 2N5239, 2N5240 SECTOR SbE ]> • M3Q5S71 High-Voltage, Silicon N-P-N T ransistors D04Q455 731 B H A S ^^3 ~/3 For High-Speed Switching and Linear-Amplifier Applications in Industrial and Commerical Service Features: ■ H igh voltage ratings: Vcer[si/s]

MJH16018

Abstract: baker e4 MTPSP10 P6302 a626 AM503 bt 109 transistor K1118 MJ16018 MTP8P10
Contextual Info: MOTORGLA SC XSTRS/R F 12E D I t»3b?E5M []GaS227 1 | 7 ^ 3 3 - / S ' ' MOTOROLA r - 3 3 -/ 3 SEMICONDUCTOR TECHNICAL DATA M J16018 MJH16018 Designer's Data Sheet NPN Silicon Pow er Transistors 1.5 k V Sw itch m ode III Series These transistors are designed for high-voltage, high-speed, power switching in induc­

AD8304-EVAL

Abstract: HP 3577A logarithmic converter AD8304 AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 RU-14 E1 to fiber optic converter circuit Keithley 236
Contextual Info: a FEATURES Optimized for Fiber Optic Photodiode Interfacing Eight Full Decades of Range Law Conformance 0.1 dB from 1 nA to 1 mA Single-Supply Operation 3.0 V– 5.5 V Complete and Temperature Stable Accurate Laser-Trimmed Scaling: Logarithmic Slope of 10 mV/dB (at VLOG Pin)

AD8304-EVAL

Abstract: AD8304 AD83041 HP 3577A AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 RU-14 SNSD
Contextual Info: a FEATURES Optimized for Fiber Optic Photodiode Interfacing Eight Full Decades of Range Law Conformance 0.1 dB from 1 nA to 1 mA Single-Supply Operation 3.0 V– 5.5 V Complete and Temperature Stable Accurate Laser-Trimmed Scaling: Logarithmic Slope of 10 mV/dB (at VLOG Pin)

Contextual Info: a FEATURES Optimized for Fiber Optic Photodiode Interfacing Eight Full Decades of Range Law Conformance 0.1 dB from 1 nA to 1 mA Single-Supply Operation 3.0 V– 5.5 V Complete and Temperature Stable Accurate Laser-Trimmed Scaling: Logarithmic Slope of 10 mV/dB (at VLOG Pin)

AD8304

Abstract: AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 AD8304-EVAL RU-14 E1 to fiber optic converter circuit pa880
Contextual Info: a FEATURES Optimized for Fiber Optic Photodiode Interfacing Eight Full Decades of Range Law Conformance 0.1 dB from 1 nA to 1 mA Single-Supply Operation 3.0 V–5.5 V Complete and Temperature Stable Accurate Laser-Trimmed Scaling: Logarithmic Slope of 10 mV/dB (at VLOG pin)

Halbleiterbauelemente DDR

Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
Contextual Info: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT­ BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

c828 npn transistor datasheet

Abstract: FS800R06KE3 c828 npn 09HVD6B-EMGF-NR TOKO CERAMIC FILTER a50 c828 TRANSISTOR equivalent c828 transistor diode in40 gp WMV smd transistor c828 transistor datasheet
Contextual Info: HybridPACK Hybrid Kit for HybridPACK™2 Evaluation Kit for Applications with HybridPACK™2 Module Application Note V2.2, 2010-03 System Engineering Edition 2010-03 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG