NPN SOT23 MARK NF Search Results

8F SOT-23 PNP on

Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
Contextual Info: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process

NPN sot23 mark NF

Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C S0113D
Contextual Info: S e m i c o n d u c t o r " BC846A BC846B BC847A BC847B BC847C SOT-23 SOT-23 Mark: 1 A ./1 B Mark: 1 E ./ 1 F ./ 1 G . NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1.0 jiA to 50 mA.

Cross Reference sot23

Abstract: FAIRCHILD SOT-23 MARK 30
Contextual Info: BC846/847/848/849/850 BC846/847/848/849/850 Switching and Amplifier Applications 3 • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector

FAIRCHILD SOT-23 MARK 1a

Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
Contextual Info: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.

Contextual Info: Discrete POWER & Signal Technologies National Semiconductor Surface Mount Transistors NPN General Purpose Amplifiers and Switches Device No. SOT-23 Mark MMBT100 (N1) MMBT100A (N1A) Case Style TO-236 (49) TO-236 (49) (V) Min (V) Min (V) Min 75 45 6 75 45

BC850

Abstract: BC849 BC846 BC848 "MARKING CODE P" BC846 SOT-23 bc847 BC856 BC860 mark 720
Contextual Info: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES *Suitable for automatic insertion in thick and thin-film circuits. *Complement to BC856 … BC860 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted

NB SOT-23 NPN

Abstract: marking NB SOT-23 transistors marking ND NPN sot23 mark NF FHRC105 FHRC104 FHRC109
Contextual Info: ࡒᔜྯ૵਌ Resistive Transistors Resistive Transistors ࡒᔜྯ૵਌ NPN Silicon FHRC101～FHRC109 DESCRIPTION & FEATURES 概述及特點 With Built-in Bias Resistors 內部基極帶阻 Simplify Circuit Design 簡單的回路設計 Reduce a Quantity of Parts and Manufacturing Process

marking code P

Abstract: BC849 bc848 BC850
Contextual Info: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES *Suitable for automatic insertion in thick and thin-film circuits. *Complement to BC856 … BC860 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted

PN2222A

Abstract: PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16
Contextual Info: PN2222A MMBT2222A PZT2222A C C E E C C TO-92 BE SOT-23 B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch

IC 7403

Abstract: PN2222A npn general purpose amplifier MMBT2222A MMPQ2222 NMT2222 PZT2222A SOIC-16 IC VS 1307 national PN2222A
Contextual Info: PN2222A MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: 100 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced

BCW71 FAIRCHILD

Abstract: sot23 mark E coding
Contextual Info: BCW71 BCW71 C E SOT-23 B Mark: K1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C C E E SOT-23 Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package

BCW65C

Contextual Info: BCW65C BCW65C C E SOT-23 B Mark: ED NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted

1N916

Abstract: BSR17A
Contextual Info: BSR17A BSR17A C E SOT-23 B Mark: U92 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings*

Contextual Info: UTC 2SC2712 NPN EPITAXIAL PLANAR TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES 3 *High Voltage and High Current :VCEO=50V,IC=150mA Max. *Excellent hFE Linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *High hFE:hFE=70~700 *Low Noise:NF=1dB(Typ.),10dB(MaX.)

BC548 BH

Abstract: BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) TYPE NO. BVCBO BVCEO BVEBO *BVCES ICBO @ *I CEV @ VCB (V) (V) (V) (V) (nA) MIN MIN MIN MAX hFE @ VCE @ IC (V) (mA) VCE (SAT) @ IC toff Cob fT (pF) (MHz)

Contextual Info: BCW71 BCW71 C E SOT-23 B Mark: K1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BCW65C

Contextual Info: N BCW65C C E SOT-23 B Mark: ED NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

MARKING 5D NPN

Abstract: MARK 5D SOT sot-23 Marking 3D Kst5089
Contextual Info: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088

2N5551

Abstract: MMBT5551
Contextual Info: N MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BF242

Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C C B E TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol

2N5551

Abstract: MMBT5551
Contextual Info: MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPS5179

Abstract: TRANSISTOR C 3223 MPS5179 small signal transistor MMBT5179 PN5179
Contextual Info: MPS5179 PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency