transistor potencia
Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494
Contextual Info: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP
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fl531bbc546bc547bc548+15bc549bc556bc557pa6015pb6015pa6025transistor potenciat092ebc transistorbc558 ebcceb npnpb6025pa6014transistoresbf494
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c2611
Abstract: BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238
Contextual Info: TO-126 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . TYPE 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SD669A 2SC3417 BD437 BD238 BD329 BD330 NPN PD OR *Tc= Ic PNP 25℃ mW (mA) PNP NPN PNP PNP NPN NPN NPN NPN PNP NPN PNP ICBO VCBO VCEO * ICEO
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o-1262sb7722sd8822sb649+72sb649a2sd669a2sc3417bd437bd238c26118229
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NPN transistor 2n4400 beta value
Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
Contextual Info: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN
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2n27112n27122n29242n2925+142n29262n44012n44022n4403mps2713mps2714npn transistor 2n4400 beta valuetp4058npn transistor 2n 3904tp4059transistor ebc 3904tp40602n2712 to-92hstp3644
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2SA673A
Abstract: 2SC1213A ic100na NPN transistor ECB TO-92
Contextual Info: 2SA673A 2SC1213A SILICON TRANSISTOR 2SA673A PNP and 2SC1213A TO-92 (NPN) are silicon epitaxial transistors designed for medium power amplifiers and switching applications. (PNP) is complementary to 2SC1213A 2SA673A (NPN). ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage
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2sa673a2sc1213a500ma400mw+3100maic100nanpn transistor ecb to-92
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2N5249
Contextual Info: CRO DESCRIPTION 2N5249 is NPN silicon planar transistor designed for AF small signal amplifier stages. 2N5249 NPN SILICON TRANSISTOR TO-92B ECB ABSOLUTE M AXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
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2n5249o-92b100ma330mw+2300fisaug-96
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Contextual Info: IC 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCB0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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2n3417500ma |
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Contextual Info: CRO DESCRIPTION 2N5249 is NPN silicon planar transistor designed for AF small signal amplifier stages. 2N5249 NPN SILICON TRANSISTOR TO-92B ECB ABSOLUTE M AXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
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2n5249o-92b300/iis100ma+2330mwaug-96
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2N3417
Abstract: transistor BO 540 NPN transistor ECB TO-92
Contextual Info: 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
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2n3417500matransistor bo 540npn transistor ecb to-92 |
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TP107B
Abstract: 2N5133 TP107A 2N3565 TP109B tp107 TP252A TP251B MPS-A13 pnp 2N5138
Contextual Info: Q Q D f l O I I C EconolineR Plastic-Molded 0I KHV UC Silicon SEPT" Transistors SMALL-SIGNAL LOW NOISE AMPLIFIERS P O LA R IT Y Pd 25 C mW 2N3565 2N5133 2N5138 2N 5376 2N5377 2N5378 2N 5379 NPN NPN PNP NPN NPN PNP PNP 625 625 625 500 500 500 500 30 20 30
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2n35652n51332n51382n5377+132n5378mps5308a2n53062n5306a2n53072n5308tp107btp107atp109btp107tp252atp251bmps-a13 pnp
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NPN transistor ECB TO-92
Abstract: 2N3414 0181 ecb
Contextual Info: NPN SILICON TRANSISTOR DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. TO-92 ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Operating & Storage Junction Temperature
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2n3414500ma100jia10fia+2npn transistor ecb to-920181 ecb
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2N5249
Abstract: "Small Signal Amplifier"
Contextual Info: 2N5249 NPN SILICON TRANSISTOR TO-92B DESCRIPTION 2N5249 is NPN silicon planar transistor designed for AF small signal amplifier stages. ECB ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation
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2n5249o-92b100ma330mw+510/ia50parameter300/xsaug-96small signal amplifier
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2SC1815
Abstract: MICRO ELECTRONICS ltd transistor 2SC1815 GR
Contextual Info: 2SC1815 NPN SILICON TRANSISTOR TO-92B 2SC1815 is NPN silicon epitaxial transistor designed for RF, AF amplifier and general purpose applications. ECB ABSOLUTE MAXIMUM RATINGS 45 V Collector-Base Voltage vCB0 Collector-Emitter- Voltage VCEO Emitter-Base Voltage
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2sc1815t0-92b300mw41q321+2micro electronics ltd transistor2sc1815 gr
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str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.
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m3d067bf859o-202mbh794+11sca63115002/00/03/pp8str 6707philips 232108 npn transistoric str 6707to-202 transistor npnbp317d-20097transistor d 2333philips ltd 202
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2n2712 data sheet
Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0
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2n27122n27142n29232n2924+102n29252n42892n44002n2712 data sheet2n3711 equivalent2n39042n40582n29262n33932n3859a equivalent to pnp
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BF858
Abstract: BF859 BF857 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors
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m3d067bf857bf858bf859+3o-202mbh794bp317
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BF859
Abstract: BF857 BF858 BF859 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors
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m3d067bf857bf858bf859+3o-202mbh794bf859 equivalent
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1902 transistor
Abstract: BTN2129A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C853A3 Issued Date : 2004.07.14 Revised Date :2004.09.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129A3 Description The BTN2129A3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
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c853a3btn2129a3r2120ul94v-0+11902 transistor
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BF422A
Abstract: NPN transistor ECB TO-92 1902 transistor BF422 BF422A3 BF423A3 C234A3
Contextual Info: Spec. No. : C234A3 Issued Date : 2004.02.27 Revised Date : 2004.07.28 Page No. : 1/4 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BF422A3 Description • NPN high voltage transistors in a TO-92 plastic package. • Complementary to BF423A3. Features
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c234a3bf422a3bf423a3ul94v-0+4bf422anpn transistor ecb to-921902 transistorbf422
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Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION
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NPN transistor ECB TO-92
Abstract: BF420A3 1902 transistor BF420 BF420A3S
Contextual Info: Spec. No. : C234A3-A Issued Date : 2004.03.02 Revised Date : 2004.10.18 Page No. : 1/4 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BF420A3/S Description • NPN high voltage transistors in a TO-92 plastic package. • Complementary to BF421A3/S.
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c234a3-abf420a3/sbf421a3/sul94v-0+5npn transistor ecb to-92bf420a31902 transistorbf420bf420a3s
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Contextual Info: CRO DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. Their maximum power dissipation = 160mW at Ta=25°C. CASE T0-92Á MPS TYPES MPS/2N2923,4,5 and similar types NPN SILICON
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160mwt0-92mps/2n2923t0-92b+6mps/2n271112pfnmps/2n2712mpsmps/2n3398200mhzdec-95
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302 opto
Abstract: GET06017 Q62702-P1624 Q62702-P1625 Q62702-P1641 npn phototransistor
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar
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q62702-p1641ppeget06017302 optoq62702-p1624+3q62702-p1625q62702-p1641npn phototransistor
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BOX69477
Abstract: 2N5307 2N5308
Contextual Info: 2N 5307 & 2N 5308 NPN DARLINGTON AM P IFIER MECHANICAL OUTLINE TO-92B GENERAL DESCRIPTION : The 2N 5307 & 2N 5308 are NPN silicon planar epitaxial Darlington amplifiers* The devices are suitable for preamplifier input stages requir ing high input impedance or very high
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o-92b300ma200matelex-43510+3box694772n53072n5308
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2N5307
Contextual Info: 2N 5307 & 2N 5308 NPN DARLINGTON GENERAL DESCRIPTION : A M P IFIER MECHANICAL OUTLINE TO-92B The 2N 5307 & 2N 5308 are NPN silicon planar epitaxial Darlington amplifiers. The devices are suitable for preamplifier input stages requir ing high input impedance or very high
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o-92b400sm10ftna20mhz+12n5307
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