NPN 337 Search Results

C 337-25

Abstract: C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338
Contextual Info: BC 337 / BC 338 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0

GH1-237QG

Abstract: GH1-237QH GH1-237QK GH1-237QX GH1-337QA GH1-337QB GH1-337QD GH1-337QE GH1-437QC GH1-437QF
Contextual Info: 页码，1/1 GH1电感式接近开关 37 37 5 外形编号 检测距离Sn[mm] 具 备 型 号 NPN 常开 GH1-337QA NPN 常闭 GH1-337QB NPN 一开一闭 GH1-437QC DC PNP 常开 型 PNP 常闭 GH1-337QD GH1-337QE PNP 一开一闭 GH1-437QF 二线制 常开

c 337 25

Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200
Contextual Info: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt

639 TRANSISTOR PNP

Abstract: transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PNP NPN CB-1% PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .

Contextual Info: BC337, BC338 Small Signal Transistors NPN TO-92 _ FEATURES_ NPN Silicon Epitaxial Planar Transistors for switching and am plifier applications. Especially suitable for AF-driver stages and low power output stages. .098 ( 2 . 5 ) *

TRANSISTOR BC 213

Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

transistor Bc 540

Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

transistor bc 488

Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
Contextual Info: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .

transistor BC 310

Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

Transistor 337

Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
Contextual Info: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier

Mitsubishi databook

Abstract: Mitsubishi transistor databook transistor 2sc3379 2SC3379 T-46 transistor npn Epitaxial Silicon zs 35
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC 3379 NPN E P IT A X IA L PLANAR TY PE DESCRIPTION OUTLINE DRAWING D im e n s io n s in m m 2 S C 3 3 7 9 is a silicon NPN epitaxial planar typ e transisto r sp e cifi­ cally designed fo r UHF pow er am plifier applications.

ic an 6651

Abstract: MPS6652 MPS6601 MPS6602 MPS6651
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN MPS6601 M PS6602* PNP MPS6651 MPS6652* COLLECTOR 3 2 BASE PNP NPN 1 EMITTER EMITTER Voltage and current are negative for PNP transistors M AXIMUM RATINGS Symbol Rating C ollector-Em itter Voltage

45h8

Contextual Info: D44H Series NPN , D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,

LA 4440 IC

Abstract: L 4440 ic 4440 3TE445 3TX603 BDY15 BDY16 bd 106 case 603 b bd 3055
Contextual Info: NPN Silicon Power Transistors NPN Silicon Epitaxial Planar Transistors in SOT-9 SO-55 metal case For l.f. driver and output stages and high power switching Type Maximum Ratings Characteristics at Tlimh ~ 25 °C @ VCE = 2 V fc - 0,5 A @ "^case — 25 °C

TRANSISTOR 2SC 2581

Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

BPW13A

Abstract: BPW13B K950 BPW13C BPW13 Telefunken Phototransistor npn phototransistor bpw 104 lm 1510
Contextual Info: T e m ic bpw 13 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW13 is a high speed silicon NPN epitaxial planar phototransistor in a standard T O -18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

QUAD DUAL-IN-LINE HERMETIC SILICON ANNULAR AMPLIFIER

Abstract: MHQ2483 2N2483 2N2484 MHQ2484
Contextual Info: MHQ2483 silicon MHQ2484 QUAD DUAL-IN-LINE NPN HERMETIC SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL-IN-LINE NPN SILICON AMPLIFIER TRANSISTORS . . . designed fo r low-level, high-gain am plifier applications. • Low Noise Figure — > l c - 10 fiA dc, f = 10 Hz to 15.7 kH z

NEC 41-A 002

Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for

tfk 339

Abstract: tfk 337 BFY 39 transistor BFY56 bfy56a BEsat11 BFY 20
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein, V erstärker und Schalter Applications: General, am plifiers and switches Abmessungen in mm Dimensions in mm K o llektor m it Gehäuse verbunden C o lle cto r co n n ecte d with case

2N1893

Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military

BC-337 B 011

Abstract: BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent
Contextual Info: A C T IV E COMPONENTS FOR H Y B R ID CIRCU ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES ê CB-166 SOT-23 Silicon NPN transistors, switching and general purpose Marl ing Mart,tuage Type Type N R . Pin conf. Brochage Transistors NPN silicium, usage générai et commutation