NPN 200W Search Results

Contextual Info: S P RAG UE /S EN IC ON D GROUP 03 D • flS13flS0 0004556 3 ■ ELECTRICAL CHARACTERISTICS at T a = +25°C Iebo IcBO Polarity V BB CBO (V) THC5088 THC5089 THC5305 THC5306 NPN NPN NPN NPN 100 100 300 300 35 30 25 25 30 25 25 25 4.5 4.5 12 12 50 50 100 100 20

Marking Code 2X

Abstract: 2N4401 MMBT4401 MMBT4403
Contextual Info: ADVANCED INFORMATION ADVANCED INFORMATION MMBT4401 SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) Top View ¨ As complementary type, the PNP

200w transistor amplifier circuit

Abstract: MMBT2222A MPS2222A mps2222a transistor pin configuration transistor mps2222a
Contextual Info: ADVANCED INFORMATION MPS2222A SMALL SIGNAL TRANSISTORS NPN TO-92 FEATURES 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ On special request, this transistor is

TO63 package

Abstract: NTE71
Contextual Info: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.

transistor 2n4401 equivalent

Abstract: transistor D55 200w transistor amplifier circuit 2N4401 NPN Switching Transistor npn 200w 2n4401 equivalent transistor 2N4401 transistor 2n4403 2N4401 transistor pin configuration transistor 2n4401
Contextual Info: ADVANCED INFORMATION ADVANCED INFORMATION 2N4401 SMALL SIGNAL TRANSISTORS NPN FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the PNP

nte328

Abstract: 25A12
Contextual Info: NTE328 Silicon NPN Transistor Power Amp, Switch Description: The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage

marking code 1p

Abstract: MMBT2222A MPS2222A 10D4
Contextual Info: ADVANCED INFORMATION ADVANCED INFORMATION MMBT2222A SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) Top View ¨ This transistor is also available in the

NTE327

Abstract: transistor NTE327
Contextual Info: NTE327 Silicon NPN Transistor Power Amp, Switch Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN DARLINGTON POWER TRANSISTOR BDX69 BDX69A BDX69B BDX69C MECHANICAL DATA Dimensions in mm 9.0 max. 26.6 max. 2.5 NPN Darlington transistors for audio

nte181

Abstract: NTE180MCP NEC 08F NTE181MP NTE180 NTE181 power transistor 200w audio power amplifier
Contextual Info: NTE180 PNP & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per

NTE87

Abstract: NTE88 NTE88MCP NTE88M
Contextual Info: NTE87 NPN & NTE88 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE87 (NPN) and NTE88 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. These

200W TRANSISTOR AUDIO AMPLIFIER

Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
Contextual Info: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.

"Darlington Transistors"

Abstract: BDX 20a 200w AUDIO AMPLIFIER TRANSISTOR BDX Darlington 30A Darlington 40A darlington transistor for audio power application npn DARLINGTON 10A NPN Transistor VCEO 80V 100V transistor BDX 65
Contextual Info: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.

Contextual Info: BDX69A BDX69A BDX69B BDX69C S EM E LA B NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.

2SD797

Abstract: 2s0797
Contextual Info: 2SD797 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES : • High Power Dissipation PC=200W Tc=25°C ' High Collector Current

2sc2652

Abstract: 2-13B1A 200WPEP
Contextual Info: TOSHIBA 2SC2652 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.) Collector Efficiency

TH430

Abstract: SD1728 M177
Contextual Info: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and

TH430

Abstract: M177 JESD97 SD1728 TH430 marking
Contextual Info: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and

2sc2652

Contextual Info: TOSHIBA 2SC2652 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.)

2-21F1A

Abstract: 2SD1313
Contextual Info: TO SH IBA 2SD1313 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 313 HIGH POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS. • High Power Dissipation : Pç; = 200W Te = 25°C • High Collector Current : Iç; = 25A (DC)

2SD1313

Abstract: 2-21F1A
Contextual Info: TO SH IBA 2SD1313 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 313 HIGH POWER AMPLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS • High Power Dissipation : Pç; = 200W Te = 25°C • High • High • Low Saturation Voltage :

NPN 250W

Abstract: BUL50A-T247 NPN 400V 40A BUR13 BUL58
Contextual Info: Search Results Part number search for devices beginning "BUL47" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUL47A NPN TO3 300V 40A 25 - 4/25 20MHz 200W

Contextual Info: i IT ¡electronics . SILICON EPITAXIAL NPN TRANSISTOR '• E - - Semelab Limited 2N5886 Hermetic T03 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available

t03 package transistor pin dimensions

Abstract: 8830 transistor
Contextual Info: i IT ¡electronics . SILICON EPITAXIAL NPN TRANSISTOR '• E - - Semelab Limited 2N5886 Hermetic T03 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available