NPN 200W Search Results

Contextual Info: S P RAG UE /S EN IC ON D GROUP 03 D • flS13flS0 0004556 3 ■ ELECTRICAL CHARACTERISTICS at T a = +25°C Iebo IcBO Polarity V BB CBO (V) THC5088 THC5089 THC5305 THC5306 NPN NPN NPN NPN 100 100 300 300 35 30 25 25 30 25 25 25 4.5 4.5 12 12 50 50 100 100 20

200w transistor amplifier circuit

Abstract: MMBT2222A MPS2222A mps2222a transistor pin configuration transistor mps2222a
Contextual Info: ADVANCED INFORMATION MPS2222A SMALL SIGNAL TRANSISTORS NPN TO-92 FEATURES 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ On special request, this transistor is

TO63 package

Abstract: NTE71
Contextual Info: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN DARLINGTON POWER TRANSISTOR BDX69 BDX69A BDX69B BDX69C MECHANICAL DATA Dimensions in mm 9.0 max. 26.6 max. 2.5 NPN Darlington transistors for audio

nte181

Abstract: NTE180MCP NEC 08F NTE181MP NTE180 NTE181 power transistor 200w audio power amplifier
Contextual Info: NTE180 PNP & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per

NTE87

Abstract: NTE88 NTE88MCP NTE88M
Contextual Info: NTE87 NPN & NTE88 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE87 (NPN) and NTE88 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. These

BU808DFH

Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416

2SD797

Abstract: 2s0797
Contextual Info: 2SD797 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES : • High Power Dissipation PC=200W Tc=25°C ' High Collector Current

2sc2652

Abstract: 2-13B1A 200WPEP
Contextual Info: TOSHIBA 2SC2652 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.) Collector Efficiency

2sc2652

Contextual Info: TOSHIBA 2SC2652 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.)

2SD1313

Contextual Info: Æ àM O SPE C HIGH-VOLTAGE HIGH POWER TRANSISTORS NPN 2SD1313 . designsd for use in high power amplifier,and switching applcation. FEATURES: * High Power Dissipation PD= 200W TC= 25°C * High Collector Current- lc= 25A(DC) * High Speed Switching - 1 ,=0.5 us(Typ) @ lc= 15A

2SC2652

Abstract: 10ID 1S1555 50WV
Contextual Info: T O S H IB A 2SC2652 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Unit in mm Specified 50V, 28MHz Characteristics Po = 200Wpj]p Output Power Power Gain Gp = 13dB (Min.)

2SD1313

Abstract: lt25 25D1313 2-21F1A
Contextual Info: 2SD1313 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 313 HIGH POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS. • High Power Dissipation : Pç; = 200W Tc = 25°C • High • High • Low Saturation Voltage : V ç;e (sat) = l*0V (Max.) (Iq = 15A)

2SD1313

Contextual Info: 2SD1313 SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in tnm HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATURES : . High Power Dissipation . High Collector Current . High Speed Switching Low Saturation Voltage

NTE2670

Abstract: NTE2671
Contextual Info: NTE2670 NPN & NTE2671 (PNP) Silicon Complementary Transistors Silicon Perforated Emitter Technology Audio Power Output Description: The NTE2670 and NTE2671 utilize Perforated Emitter technology specifically designed for high power audio output, disk head positioners and linear applications.

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1313 INDUSTRIAL APPLICATIONS Unit in n HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATU R E S : . High Power Dissipation : . High Collector Current : . High Speed Switching : . Low Saturation Voltage :

Contextual Info: MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

125OC

Abstract: MMBT3904 MMBT3906
Contextual Info: MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

2SC4608

Abstract: IC 720
Contextual Info: 2SC4608 SILICON NPN TRIPLE DIFFUSED MESA TYPE TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. Unit in mm HIGH SPEED SWITCHING APPLICATIONS. . High Voltage •»' . Fast Switching Speed. Resistive Load tf=0.15ys(Typ.)

2SC4290A

Abstract: 015 20N
Contextual Info: 2SC4290A SILICON NPN TRIPLE DIFFUSED MESA TYPE TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. Unit in mm HIGH SPEED SWITCHING APPLICATIONS. : V c b o ~1500V SYMBOL RATING VCBO 1500 V Collector-Emitter Voltage

NTE2661

Abstract: npn 200w
Contextual Info: NTE2661 Silicon NPN Transistor Horizontal Deflection Output for HDTV Features: D High Speed: tf = 0.15µs Typ D High Breakdown Voltage: VCBO = 1700V D Low Saturation Voltage: VCE sat = 3V Max Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

125OC

Abstract: MMBT3904
Contextual Info: MMBT3904 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR

MMBT2222A

Abstract: MMBT2907A RS-200W
Contextual Info: MMBT2222A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Epitaxial planar die construction * Complementary PNP Type available(MMBT2907A) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed

2SC4289A

Abstract: 2SC1173-Y 2SA473Y
Contextual Info: 2SC4289A SILICON NPN TRIPLE DIFFUSED MESA TYPE TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. U n i t i n mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. 2 0.5 MAX . 0 3.3±0.2 HIGH SPEED SWITCHING APPLICATIONS. . High Voltage : VcB0=1500V . Fast Switching Speed.