NTE88 Search Results

NTE889

Abstract: nte889m
Contextual Info: NTE889M Integrated Circuit Dual, Low Power, JFET OP Amplifier Description: The NTE889M is a JFET–input operational amplifier in an 8–Lead DIP type package designed for low power applications and features high input impedance, low input bias current, and low input offset

NTE87

Abstract: NTE88 NTE88MCP NTE88M
Contextual Info: NTE87 NPN & NTE88 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE87 (NPN) and NTE88 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. These

NTE888M

Contextual Info: NTE888M Integrated Circuit Low Power Programmable Operational Amplifier Description: The NTE888M is an operational amplifier in an 8–Lead DIP type package featuring low power consumption and high input impedance. In addition, the quiescent currents within this device may be

Contextual Info: NTE88 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)250º V(BR)CBO (V)250 I(C) Max. (A)10 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

NTE857M

Abstract: NTE887M NTE857
Contextual Info: NTE887M Integrated Circuit Low Power, JFET OP Amplifier Description: The NTE887M is a JFET–input operational amplifier in an 8–Lead DIP type package designed as a low–power version of the NTE857M amplifier. This device features high input impedance, wide bandwidth, high slew rate, and low input offset and bias current.

NTE889M

Abstract: NTE889 NTE878
Contextual Info: LINEAR INTEGRATED CIRCUITS NTE873 28-Lead DIP, See Diag. 253 Luminance Chroma Processor/Demod, Vcc * 15V Sharpness Control Luma *R" Input VCO “C" Input Auto Beam Umiter Luma V input VCO “R" Input Tint Control Picture Control Luma “C" Control Clamp Filter

Contextual Info: Maximum Breakdown Voltage Diag. No. Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBO BV ceo BVeb0 hFE Pd fT TO63 15 20 150 90 7 20 Min 200 20 High Current Amp, Fast Switch TO61 Isol 16 10 120 100 6 30 Min 115 30 NPN-Si

darlington pair transistor 1A

Abstract: NTE102A NTE93 NTE100 16 amp npn darlington power transistors t03 Darlington npn stud mount NTE92 NTE103A NTE102 100 amp npn darlington power transistors
Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) h Case Style Diag. No. Maximum Collector Current (Amps) •c BVcb O

NPN MATCHED PAIRS

Abstract: 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58
Contextual Info: BI-POLAR TRANSISTORS NTE TVpe Number Polarity and Material Description and Application 59 PNP-Si High Pwr Audio Output Compl to N TE 58 60 NPN-Si High Pwr Audio, Disk Head , Positioner, Linear Applications (Compl to NTE61) 60MP NPN-Si Matched Pair of NTE60