M177 Search Results

TH430

Abstract: arco 429 diode gp 429 SD1728 M177 TRANSISTOR AS PLANAR PEP 470uf 40v arco 427 SD1728 M177 th430 e
Contextual Info: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB GOLD METALLIZATION COMMON EMITTER P OUT = 250 W PEP WITH 14.5 dB GAIN .550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430 PIN CONNECTION

Contextual Info: SD3933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 28 dB GAIN @ 30 MHz M177 epoxy sealed DESCRIPTION The SD3933 is a gold metallized N-Channel MOS

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M1772 Construction Diameters (In) 1) Component 1 12 X 1 COND a) Conductor 16 (19/29) AWG TC 0.056 b) Insulation 0.017" Wall, Nom. PVC/ 0.004" Wall NYLON

resistor 560 ohm

Abstract: SD2933
Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

SD2933

Abstract: M177 MOROCCO B 108 B
Contextual Info: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING M177 DESCRIPTION The SD2933 is a gold metallized N-Channel MOS

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M1776 Construction Diameters (In) 1) Component 1 16 X 1 COND a) Conductor 16 (19/29) AWG TC 0.056 b) Insulation 0.017" Wall, Nom. PVC/ 0.004" Wall NYLON

SD2933W

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

M177

Abstract: SD3933
Contextual Info: SD3933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 28 dB GAIN @ 30 MHz M177 epoxy sealed DESCRIPTION The SD3933 is a gold metallized N-Channel MOS

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M1779 Construction Diameters (In) 1) Component 1 19 X 1 COND a) Conductor 16 (19/29) AWG TC 0.056 b) Insulation 0.017" Wall, Nom. PVC/ 0.004" Wall NYLON

TH430

Abstract: SD1728 M177 TH430 D Transistor TH430 D M177 SD1728
Contextual Info: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATION • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD = -30 dB • GOLD METALLIZATION • COMMON EMITTER • POUT = 250 W PEP WITH 14.5 dB GAIN M177 epoxy sealed DESCRIPTION The SD1728 is a 50 V epitaxial silicon NPN planar

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

arco 427

Abstract: TRANSISTOR AS PLANAR PEP arco 429 SD1728 M177 arco 4615
Contextual Info: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB GOLD METALLIZATION COMMON EMITTER POUT = 250 W PEP WITH 14.5 dB GAIN .550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430 PIN CONNECTION

austerlitz

Abstract: CuMoCu Dow Corning 340 WPSII NI42 heatsink Austerlitz AN2027 M177 Corning stmicroelectronics fe58
Contextual Info: AN2027 APPLICATION NOTE DMOS PACKAGES 1. MOUNTING RECOMMENDATIONS FOR DMOS PACKAGES : M174, M177 & M244 1.1 Mounting recommendations - Ensure holes in heatsinks are free from burrs; - Minimum depth of tapped holes in heatsinks is 6 mm; - Use 4-40 UNC-2A cheese-head screws with a flat washer to spread the joint pressure;

McMaster-Carr

Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

Contextual Info: B U R R -B R O W N r a ADS7819 i 12-Bit 800kHz Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • • • • • • • • The ADS7819 is a complete 12-bit sampling A/D using state-of-the-art CMOS structures. It contains a complete 12-bit capacitor-based SAR A/D with inher­

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

sc1430

Abstract: 100870
Contextual Info: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

sd1446

Abstract: an power 88-108 mhz M113 M164 M175 M177 sd1460 SD1019 SD1728 M177 SD1483
Contextual Info: SILICON POWER TRANSISTORS m ÌPRf i A broad range of devices are offered for the popular frequency bands in the VHF spectrum. Applications include low and mid-band FM mobile radio, FM broadcast and aircraft communications. .380 4LFL M113 .500 4LFL (M174)

2933

Abstract: 300WPEP amplifier 400W 10w 900MA DB-2933-54 JESD97 M177 SD2933
Contextual Info: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%

M3006LAB1

Contextual Info: F Z J SGS-THOMSON M3006LAB1 ô ^ 0 g (& [I ïï^ ( Q * S REMOTE CONTROL TRANSMITTER • FLASHED OR MODULATED TRANSMISSION ■ 5 SUB-SYSTEM ADDRESSES ■ UP TO 36 COMMANDS PER SUB-SYSTEM ADDRESS ■ HIGH-CURRENT REMOTE OUTPUT AT V dd = 6V ( - Io h = 120mA)

coaxial cable awm 1354

Abstract: AWM 2498 M39024/11
Contextual Info: Manhattan Electrical Cable Alpha Wire | www.alphawire.com | 1-800-52 ALPHA Specifications subject to change. For complete specifications and availability, visit www.alphawire.com. 141 Manhattan™ Electrical Cable Signal transmission made reliable A lpha Wire’s Manhattan

DMS1-26A

Abstract: mdc 171 DMH2-22 MD 243 diode MD-525-4 MDS-222 MLLF-3 MD 202 MD-414 Adams-Russell
Contextual Info: INDEX PAGE 26 27 29 30 29 31 32 33 34 39 38 50 51 53 58 66 75 76 77 84 90 86 91 91 88 92 93 28 35 37 38 40 41 42 43 44 45 46 47 48 49 52 54 55 56 57 59 61 62 63 64 65 67 68 69 70 72 73 MODEL AM/AMC-184 AM/AMC-210 AM/AMC-211 AM/AMC-212 AM/AMC-250 AMS-117 AMS-162

m177

Abstract: M 177
Contextual Info: •1 DOUBLE-BALANCED MICROWAVE MIXER 2 .0-8.0 GHz MODELS M-177/M-177C 5 dB Typical Midband Conversion Loss 25 dB Typical Midband L-R Isolation Operable with Starved LO Guaranteed Specifications* From -5 5 °C to +85°C Frequency Range RF, LO Ports IF Port (3 dB BW)

Contextual Info: , U na. t/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization • Excellent thermal stability • Common source configuration