NI42 Search Results

mn101cp117

Abstract: mn101cp117dp mn101c16 EPROM28 MN101C117 MN101C00 MN101C115 mn101c rmout MN101CP117BF mn101cp117hp
Contextual Info: M IC R O C O M P U T E R M N 101C00 MN101C115/117 LSI 説明書 Pub.No.21411-011 PanaXSeriesは松下電器産業株式会社の商標です。 その他記載された会社名及びロゴ、製品名などは該当する各社の商標または登録商標です。

2933

Abstract: 300WPEP amplifier 400W 10w 900MA DB-2933-54 JESD97 M177 SD2933
Contextual Info: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%

TRANSISTOR SMD MARKING CODE NM

Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Contextual Info: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is

SD2933

Abstract: free transistor bs 200 M177 DB-2933-54 2933 JESD97 300WPEP 300w class ab amplifier m174 0400X0
Contextual Info: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%

M177

Contextual Info: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.

SD2933

Abstract: M177 STEVAL-TDR004V1 STEVAL-TDR00 NI 100
Contextual Info: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.

Contextual Info: NOV 2 i 1991 Final a Am7901 B/C Advanced Micro Devices Subscriber Line Audio-Processing Circuit SLAC WORLD-CHIP DISTINCTIVE CHARACTERISTICS • Combination CODEC and Filter ■ No trimming or adjustments required ■ Uses digital signal processing ■ Six user-programmable digital filters

CXD1255Q

Abstract: cxa1337 cx-7925b sony frequency synthesizer pll ILX501 lhi 778 cn/A/U 237 BG CXD1149 Semicon volume 1 IU02 icx024
Contextual Info: Semiconductor IC Semiconductor Integrated Circuit Data Book 1992 List of Model Names/ Index by Usage Description CCD Image Sensor Color CCD Image Sensor (Black/White) CCD Image Sensor System Scanning System IC for Video Camera Signal Processing IC for Video

Contextual Info: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.

SOT333

Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage

sot333

Abstract: sot390
Contextual Info: Philips Semiconductors General QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by: Philips Semiconductors is a Quality Company, renowned

Contextual Info: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.

NTC 220-11

Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,

SD2943

Abstract: austerlitz 2L TRANSISTOR M177 STEVAL-TDR00 STEVAL-TDR005V1
Contextual Info: STEVAL-TDR005V1 RF power amplifier using 2 x SD2943 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.8 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 450 W typ. ■ Input power 10 W max. ■ Efficiency: 55 % - 76 %

Phoenix BIOS manual f.34

Abstract: memory interfacing to mp 8085 8086 8088 ats doc hex rv 8086 hex bcd assembler conversion TMS7000 assembler guide 68hc11 instruction set 6805 motorola basics of 8085 microprocessor f68hc11 RCA handbook
Contextual Info: 5 n s ^ n ARCHIMEDES S O F T W A R E L_ - Archimedes C-6811 Cross-Compiler Kit For 68HC11 Microcontroller Development Third Edition April, 1992 C o p yrig h t c 1 9 8 7 ,1 9 9 2 A rc h im e d e s S o ftw are, Inc. Archimedes Software, Inc., San Francisco, CA.

M177

Abstract: SD2943 austerlitz JESD97 STEVAL-TDR005V1 power transistor transistors equivalents
Contextual Info: STEVAL-TDR005V1 RF power amplifier using 2 x SD2943 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.8 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 450 W typ. ■ Input power 10 W max. ■ Efficiency: 55 % - 76 %

Contextual Info: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%

2L TRANSISTOR

Abstract: 14981 STEVAL-TDR004V1 austerlitz M177 SD2933 Ni100 NI 100
Contextual Info: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.

SD2932

Abstract: NI42 Cu Alloy 42 CuMoCu NI 100
Contextual Info: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.

FERRITE TRANSFORMER 3932

Abstract: DB-3932-30 393M M177 RF400-9 SD3932 100b choke IMD-30 IMD10
Contextual Info: DB-3932-30 Evaluation board using 1x SD3932 for HF transmitters Features • Excellent thermal stability ■ Frequency: 2 - 30 MHz ■ Supply voltage: 100 V ■ Output power: 400 W ■ Input power 4 W max. ■ Efficiency: 62 % - 68 % ■ IMD at 400 WPEP < -25 dBc

SD2942

Abstract: sd2942 108 sd2942 module SD2933 NI 100 M177
Contextual Info: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.

austerlitz

Abstract: SD2933 2L TRANSISTOR M177 STEVAL-TDR00 NI 100
Contextual Info: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.

SD2942

Abstract: sd2942 module "RF Power Amplifier" 2L TRANSISTOR CuMoCu Ni100 sd2942 108 NI 100 m177
Contextual Info: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.

"RF Power Amplifier"

Abstract: 2L TRANSISTOR Ni100 SD2932
Contextual Info: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.