SCD80
Abstract: BB644 BB664 BB664-02V SC79
Contextual Info: BB644 /BB664. Silicon Variable Capacitance Diodes For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure BB644 BB664/-02V 1 2 Type BB644
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bb644/bb664bb664/-02vbb664+5bb664-02vod323scd80nov-14-2002sc79
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marking code INFINEON
Abstract: A2003 marking code of 0 to Z BB867-02V
Contextual Info: BB867. Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V typ.15.8 Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration
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bb867/c25vbb867-02vnov-14-2002+3marking code infineona2003marking code of 0 to z
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67-21/GHC-BV1/2T
Contextual Info: Technical Data Sheet TOP View LEDs 67-21/GHC-BV1/2T Features ․P-LCC-2 package. ․White package. ․Optical indicator. ․Colorless clear window. ․Wide viewing angle. ․Suitable for vapor-phase reflow, Infrared reflow and wave solder processes. ․Computable with automatic placement equipment.
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67-21/ghc-bv1/2tdse-0000392nov-14-2008 |
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BBY55-03W
Contextual Info: BBY55. Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread 1 BBY55-02V BBY55-02W BBY55-03W
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SE2620T-EK1
Abstract: mobile phone jammer circuit operation mobile phone jammer Bluetooth Jammer MOBILE jammer circuit diagram mobile phone jammer circuit diagram SE2620T pen drive circuit design
Contextual Info: DATA SHEET SE2620T: 2.4 GHz Wireless LAN/BT Front End Preliminary Applications • • Product Description IEEE802.11b DSSS WLAN IEEE802.11g,n OFDM WLAN Features Dual Mode IEEE802.11b & IEEE802.11g Integrated PA, Harmonic Filter, LNA and BT port
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se2620tieee802dst-00482se2620t-ek1+6mobile phone jammer circuit operationmobile phone jammerbluetooth jammermobile jammer circuit diagrammobile phone jammer circuit diagrampen drive circuit design
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YCL* rj45
Abstract: 208H
Contextual Info: Sch em atic: n H .J E lectrical S p e c i f i c a t i o n s : @25°C Isolation Voltage: 1500 Vrms Input to Output Isolation Voltage: 500 Vrms (P1 + 2 + 3 Turns Ratio: TX 1CT:1CT ±3% RX to P 6 + 7 + 8 ) 1CT:1CT ±3% CABLE SIDE OCL: 350uH Minimum <3>1D0KHz IDOmV 8mADC
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OCR Scan
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350uh100khz10omv300khz-1+700mhz30mhz-12db80mhzxfatm11ycl* rj45208h
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1803465
Contextual Info: Tips, tricks, and techniques from the analog signal-path experts S009 ਿᕀంኒi ΣЄݯঢ়ࢽॶ໔༏ ܥፕיɣኂdᗘˈᅕϽ ᔝኂʥࣂᘸཋ༏ ၉ɐஉ߮ɮԮ ΣЄݯঢ়ࢽॶ໔༏ܥፕיɣኂd
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KX23H-1035
Contextual Info: ± 2g / 4g / 8g Tri-axis Digital Accelerometer with Embedded Sensor Hub Specifications Brief PART NUMBER: KX23H-1035 Rev. 0.1 Nov-14 Product Description The KX23H is a smart sensor hub system consisting of a tri-axis +/-2g, +/-4g or +/-8g silicon micromachined accelerometer and a highperformance ARM 32-bit Cortex -M0 CPU core with 128 kbyte flash
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BBY66
Abstract: BBY66-02V BBY66-05 BBY66-05W SC79
Contextual Info: BBY66. Silicon Tuning Diodes High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread BBY66-02V BBY66-05 BBY66-05W
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bby66bby66-02vbby66-05bby66-05w+4ot323tembby66-05nov-14-2002sc79
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BB867-02V
Abstract: BB867 SC79 marking 06
Contextual Info: BB867. Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V typ.15.8 Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration
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BBY55-03W
Abstract: BBY55 BBY55-02V BBY55-02W SC79 SCD80
Contextual Info: BBY55. Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread 1 BBY55-02V BBY55-02W BBY55-03W
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SCD80
Abstract: MARKING CODE CT2 BBY55-03W
Contextual Info: BBY55. Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread 1 BBY55-02V BBY55-02W BBY55-03W
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Infineon Technologies Silicon Tuning Diode
Abstract: INFINEON marking
Contextual Info: BB867. Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V typ.15.8 Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration
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bb867/c25vbb867-02vnov-14-2002+2infineon technologies silicon tuning diodeinfineon marking
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