NOTK Search Results

M64026FP

Abstract: M64026 16P2N M64021FP 16P2N-A 64021FP
Contextual Info: MITSUBISHI COMMUNICATION 1C M64026FP PRELIMINARY NotkctThk is not a final «pocificuioo. Some parametric limó* a n S u b jta to ctunfs. BASE BAND 1C FOR CODELESS TELEPHONE DESCRIPTION The M64026FP is a voise scrambler integrated circuit designed to be used in wireless communications

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Contextual Info: too proporiy notknphoncl too Mprara to bo Jorporatten bnprfar tr to o% kterraoMon k tok d i n nand d y tk right IN i dodurarat k of Ooiporallon k i oondBon H i k dko knd . otioto or to p a t fa r monutaotura o r M k tv m u m 3 tm tto o -otonot

Contextual Info: APR 22 1991 PRELIMINARY Notk»:Tfcâ • Mt • fin i epebfeatiM.Sem* p f — rtc li«*» P t Sdama t» cha>gr % M 5 M 5 T. 27 2 7 8 P , MITSUBISHI LS I s J - l 5 , 2 0 , 2 5 2 6 2 1 4 4 - B I T 3 2 7 6 8 - W O R D BY 8 - B I T CMOS S T A T I C RAM DESCRIPTION

Contextual Info: 54ACT11874, 74ACT11874 DUAL 4-BIT D-TYPE EDGE-TRIGGERED FLIP-FLOPS WITH 3-STATE OUTPUTS D3447, MAR CH 1990-R E V IS E D O C TO BER 1990 54A C T 11 8 74 . . . J T P A C K A G E Inputs are TTL-Voltage C om patible 74A C T 11 8 74 . . . D W O R N T P A C K A G E

Contextual Info: 54ACT11191, 74ACT11191 SYNCHRONOUS 4-BIT UP/DOWN BINARY COUNTERS TI0146— D3455, MARCH 199« 54ACT11191 . . . J PACKAGE 74ACT11191 . . . D W O R N PACKAGE Inputs are TTL-Voltage Compatible Single Down/Up Count Control Line TOP VIEW Look-Ahead Circuitry Enhances Speed ot

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

S8090

Abstract: 494F D001h PC87410 PC87410VLK PC87911
Contextual Info: September 1994 PC87410 PCI-IDE Interface Controller General Description The PCI-IDE Interface Controller is designed to interface the IDE drive directly onto the PCI bus. It provides write posting and read pre-fetches, allowing the CPU to run concurrently

7391A

Abstract: IC ht 12 e
Contextual Info: ANALOG DEVICES + 3 V, Serial Input Micropower 10 - and 12-B it DACs □ AD7390/AD7391 FUNCTIONAL BLOCK DIAGRAM FEATURES M ic ro p o w e r: 100 jiA S in g le -S u p p ly +2.7 V to +5.5 V O p e ra tio n C o m p a c t 1.75 m m H e ig h t SO-8 Package A D 7390 /12 -B it R e s o lu tio n

LS386A

Abstract: SCLS386A CO-AE
Contextual Info: SN54LV14A, SN74LV14A HEX SCHMITT-TRIGGER INVERTERS SCLS386A - SEPTEMBER 1997 - REVISED APRIL 1998 EPIC Enhanced-Performance Implanted CMOS Process Typical V q l p (Output Ground Bounce) < 0.8 V at Vcc, Ta = 25°C Typical Vqhv (Output Vqh Undershoot) > 2 V at Vcc, t A = 25°C

TL7700J

Contextual Info: LINEAR INTEGRATED CIRCUITS TYPES TL7700I, TL7700C SU PPLY VOLTAGE SUPERVISORS D 2 8 1 2, D E C E M B E R 1 9 8 3 • Power-On Reset Generator • Automatic Reset Generation After Voltage Drop • Wide Supply Voltage Range . . . 1.8 V to 40 V • Precision Voltage Sensor

74BCT8374

Abstract: D3641 TEX-E wire
Contextual Info: SN54BCT8374, SN74BCT8374 SCAN TEST DEVICES WITH OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS TI0223— 0 3 6 4 1 , JUNE 1990 SN54BCT8374 IT PACKAGE SN74BCT8374 . . . DW OR NT PACKAGE Members of Texas Instruments SCOPE Family of Testability Products TOP VIEW

cj cl a17

Contextual Info: TMS29LF004T, TMS29LF004B 524288 BY 8-BIT FLASH MEMORIES Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization: 524288 x 8 Bits Array Blocking Architecture • • • • - • • • • • • • • • One 16K-Byte Protected-Boot Sector

Contextual Info: ADVANCE MT28 S F116 2 MEG x 8 FLASH MEMORY I^ IIC R O N 2 MEG x 8 5V/5V AND 3 V S m a r t V o l t a g e , SECTORED ERASE FEATURES • • • • • • • • • Thirty-two 64KB erase blocks Programmable sector lock Deep Power-Down Mode: 5p.A MAX 5V/5V operation (MT28F116 only):

Contextual Info: ADVANCE MT58LC128K16/18E1 128K X 16/18 SYNCBURST SRAM MICRON +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES Fast access times: 8.5, 9 ,1 0 , 11 and 12ns Fast OH# access times: 5 and 6ns +3.3V + 0 .3 V /-0 .1 6 5 V p o w er supply (V cc

Cherie

Abstract: t3d25
Contextual Info: |U 1IC =R O N DRAM k - _ Ä 2 56K X MT3D2569 9 DRAM MODULE 256K x 9 DRAM _ FAST PAGE MODE MT3D2569 LOW POWER, F EXTENDED V T F N n P D RF REFRESH (MT3D2569 L) M O D IW 1I^ FL — FEATURES MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 • Packages

Contextual Info: na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-6960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Collector diode voltage VCI! . -SO volts (Y*;it — —1-5 volts) Emitter diode voltage YK1!0 .,.;.-[0 volts

Contextual Info: L-ConcLuctoi Lpi.oa.ucti., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 MRF607 The RF Line 1.75 W - 1 7 5 MHz RFPOWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier, or oscillator applications in military, mobile, marine and citizens band equipment.

NCE100-S04

Abstract: NCE100-S04-1 NCE100-T01-1 NCE100 newport 15AT VDE0871 V0271
Contextual Info: Information the fo llo w in g New port C o m p o n e n ts data b o o k s are a ls o a v a ila b le □ A p p lica tio n N otes □ DC/DC C o n v e rte rs □ D elay L in e s □ Inductors □ Interface P ro d u c ts □ N etw ork P ro d u c ts □ T ra n sfo rm e rs

Contextual Info: bM27S25 004203b ^70 A T A SHEET EC MOS INTEGRATED CIRCUIT /¿PD42S4190, 424190 4 M-BIT DYNAMIC RAM 256K-WORD BY 18-BIT, FAST PAGE MODE, BYTE WRITE MODE DESCRIPTION The //PD42S4190, 424190 are 262 144 w ords by 18 bits dynamic CMOS RAMs. The fast page m ode and byte

DPV27C256-200

Abstract: TVR 07 spec 27C256 32KX8 DPV27C256-250 30A011-00 Dense-Pac Microsystems 30a01100 30a011 00DD2
Contextual Info: DENSE-PAC MI CR OS Y S T E M S 07E D | 575^415 GDDD512 T J~ DPV27C256 32KX8 M O N O L IT H IC C M O S EP R O M DESCRIPTION: The DPV27C25&-200, -250 is a high-speed 32KX 8 UV eraseable and electrically programmable read only memo EPROM with CMOS technology. It is especially well suited for applica­

Contextual Info: 64K X24645 8192x8 Bit Advanced 2-Wire Serial E2PROM with Block Lock Protection FEATURES DESCRIPTION * 2.7V to 5.5V Power Supply * Low Power CMOS —Active Read Current Less Than 1mA —Active Write Current Less Than 3mA —Standby Current Less Than 1|±A

OAOLP2

Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
Contextual Info: MCS@51 MICROCONTROLLER FAMILY USER’S MANUAL ORDER NO.: 272383-002 FEBRUARY 1994 Intel Corporation makes no warrsnfy for the uee of ite products and assumes no responsibility for any ewors which may appear in this document nor does it make a commitment to update the information contained herein.

GM71C18160AJ7

Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Contextual Info: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I