NON-VOLATILE RANDOM ACCESS MEMORY Search Results

8085 microprocessor ram 4k

Abstract: microprocessor Rockwell R6500 8051 TLx rockwell 6500
Contextual Info: R2000 Memory Products 64 * Rockwell X R2000 8 NON-VOLATILE RAM ^ 6 Product Preview DESCRIPTION FEATURES The Rockwell R2000 Non-Volatile Random Access Memory NVRAM is a conventional 64 x 8 static random access memory (RAM) overlaid bit-for-bit with a 64 x 8 non-voltatile

221220

Abstract: mbm2212-20 MBM2212-25 X2212
Contextual Info: FU JITSU MOS 1024-BIT NON-VOLATILE RANDOM ACCESS MEMORY M BM 2212-20 MBM 2212-2 5 December 1987 Edition 3.0 1024-BIT NON-VOLATILE STATIC RANDOM ACCESS MEMORY The F u jits u M B M 2 2 1 2 is a 1 0 2 4 -b it n o n -v o la tile s ta tic ra n d o m access m e m o ry

MBM2212-25

Contextual Info: FU JITSU MOS 1024-BIT NON-VOLATILE RANDOM ACCESS MEMORY M BM 2212-20 MBM 2212-2 5 D ecem b er 1 9 8 7 E d itio n 3 .0 1024-BIT NON VOLATILE STATIC RANDOM ACCESS MEMORY The F u jits u M B M 2 2 1 2 is a 1 0 2 4 -b it n o n -v o la tile s ta tic ra n d o m access m e m o ry

intel 2004

Abstract: intel Non-Volatile Random Access Memory NVRAM 2004-2 intel
Contextual Info: intei A W M M ïls DIM 2004 4K 512 x 8 NON-VOLATILE RANDOM ACCESS MEMORY • ■ 5 \folt Only Operation Fast Static RAM Read/WriteCycles ■ Lower Power Standby Mode ■ 10-Year Data Retention for each STORE ■ Minimum 10,000 Non-Volatile STORE Cycle Endurance

Contextual Info: Marvell DragonFly NVRAM Second-Generation, High-Performance Non-Volatile DRAM Write Cache PRODUCT OVERVIEW The Marvell DragonFly NVRAM, part of the DragonFly platform family, delivers a high-performance 3.2 gigabytes-per-second GB/s Non-Volatile Dynamic Random Access Memory (NVRAM) write cache solution for low latency and IOPS-intensive applications. DragonFly

water level control block diagram

Abstract: NVSRAM "Ferroelectric RAM" EEPROM COPIER circuit Using nvsRAM in RAID Controller Applications
Contextual Info: Non-Volatile Static Random Access Memory NVSRAM - High Speed Nonvolatility By S. Vinayaka Babu, Product Marketing Engineer Staff, and Pramodh Prakash, Application Engineer, Cypress Semiconductor Corp. Introduction Memories are an integral part of any electronic system/application. They can be broadly classified as volatile memories (lose

non volatile ferroelectric memory

Abstract: SYFR8128FK-15 SYFR8128FK
Contextual Info: 128K x 8 FRAM SYFR8128FK-15 Issue 1.0 August 2001 Description The SYFR8128FK is a 2.7~3.6V 1Mbit non volatile memory module employing advanced ferroelectric devices. A ferroelectric random access memory or FRAM is nonvolatile but operates similar to SRAM.

SRM2114C25

Abstract: SRM2114C-25 SRM2114C srm2114 2114T25
Contextual Info: SRM2114Ï25 CMOS 4K-BIT STATIC RAM I DESCRIPTION The SRM2114T25is a 1,024 words x 4 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby current consumption makes it ideal for applications requiring non-volatile storage with

SRM-2016

Abstract: SRM2016C SRM2016
Contextual Info: SRM2016 CMOS 16K-BIT STATIC RAM • DESCRIPTION The SRM201612 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with

NVSRAM

Abstract: PDIP32 U632H64 U634H256
Contextual Info: Product Summary nvSRAM nvSRAM: SRAM and EEPROM within a single Chip Author: Dr. Stefan Günther Dr. Steffen Buschbeck Heiko Roeper Powerful processor systems which place high demands on reliability require optimum data storage systems. The nvSRAM non-volatile Static Random Access Memory now available

fram

Abstract: MB95R203 fram rfid 0x61 FRAM Memory FUJITSU FRAM MB95R
Contextual Info: AN app note FRAM MCU Key Strengths and Applications Introduction0 Fujitsu’s Ferroelectric Random Access Memory FRAM microcontroller (MCU), which features embedded, non-volatile FRAM, is part of the company’s 8-bit microcontroller 8FX family. The new embedded FRAM memory technology can be

Contextual Info: SRM201OOI-70/85/10 CMOS 1M-BIT STATIC RAM DESCRIPTION The SRM201 OOIjws&'io is a 131,072 words x 8 bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage

Contextual Info: EPSON SRM20116LF85/10 1 M-Bit Static RAM • Low Supply Current • Access Time 85ns/100ns • 65,536 Wordsxl 6-Bit Asynchronous • DESCRIPTION The SRM20116LF85/10 is a 65,536 wordsxl 6-bit asynchronous, static, random access memory on a monolithic CMOS chip.Its very low standby power requirement makes it ideal for applications requiring non-volatile storage

SRM2264LCT

Abstract: 2264L SRM2264
Contextual Info: SRM2264L,m CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8-Bit Asynchronous DESCRIPTION The SRM2264Lio/i2 is an 8,192 wordsx 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with

SRM2564M

Abstract: SRM25
Contextual Info: SRM2564 CMOS 64K-BIT STATIC RAM • Low Voltage and Low Supply Current • Access Time 1,000ns • 8,192 Words x 8-Bit Asynchronous • DESCRIPTION The SRM2564 is an 8,192 words x 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with

SRM2017C12

Abstract: SRM2017C SRM2017C10 SRM2017
Contextual Info: PF299-02 SRM2017C10/12 CMOS 16K-BIT STATIC RAM •L o w Supply Current #Access Time 100ns/120ns # 2 ,0 4 8 Words X 8 Bits Asynchronous •DESCRIPTION The SRM2017C 10/12 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile

srm2264lct

Contextual Info: SRM2264LTio/i2 HIGH SPEED CMOS 64K-BIT STATIC RAM • Industrial Temperature Range • DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage

Contextual Info: OCT 16 m? GoldStar GM76C28 CMOS 16K-BIT STATIC RAM GOLD STAR CO., LTD. Description The GM76C28to/u is a 2,048 words x 8 bits asynchronous, static,random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with back-up

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-4E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-2E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-8E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

PSEUDO SRAM

Abstract: MB85R1002 din 3102
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-4Ea Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

MB85R2001

Abstract: MB85R2001PFTN-GE1
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-2E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-1E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.